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    BD NPN TRANSISTORS 177 Search Results

    BD NPN TRANSISTORS 177 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    BD NPN TRANSISTORS 177 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR bd 181

    Abstract: TRANSISTOR BD 689 transistor bc 541 Marking code 722 SOT89 transistor BC 209 BCX52 BCX53 sot89 npn marking code 72 BCX54-10 BCX54-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 24 Philips Semiconductors Product specification


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    PDF M3D109 BCX54; BCX55; BCX56 BCX51, BCX52 BCX53. TRANSISTOR bd 181 TRANSISTOR BD 689 transistor bc 541 Marking code 722 SOT89 transistor BC 209 BCX53 sot89 npn marking code 72 BCX54-10 BCX54-16

    BD NPN transistors 177

    Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
    Text: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range


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    PDF CEOsus80 BD NPN transistors 177 IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a

    B0176

    Abstract: 80178 l206 transistor npn transistors,pnp transistors BD175 BD176 BD177 BD178 BD179 BD180
    Text: CDU BD175, BD177, BD179 BD176, BD178, BD180 BD I75,177,179 BD176,178,180 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM “V i> J- i_ ÜJ E U­


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    PDF BD175, BD177, BD179 BD176, BD178, BD180 BDI75 BDI76 BD175 0001E0L. B0176 80178 l206 transistor npn transistors,pnp transistors BD176 BD177 BD178 BD180

    BD NPN transistors 177

    Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
    Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15


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    PDF BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180

    SM 78A

    Abstract: D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A
    Text: SGS-THOMSON S i ;L Ì S lftB lD (S Ì BD 675/75A/77/77A/79/79A /81 B D 676/76A /78/78A /80/80A /82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­


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    PDF BD675/75A/77/77A/79/79A/81 BD676/76A/78/78A/80/80A/82 BD675, BD675A, BD677, BD677A, BD679, BD679A BD681 O-126 SM 78A D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


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    PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    tip 220

    Abstract: SGS TIP 32 BD NPN transistors 177 tip 31 mje370 transistor bd 126 To 126 TIP31 NPN Transistor diagram mje520 2n 4918 9 218
    Text: ¿t 7 SGS'THOMSON GMO SIMSi[LI(S?[MM(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR TO 39 SOT 194 SOT 93 TOP 31 ISOWATT 218 TO 220 TO 3 ISOWATT 220 EPITAXIAL BASE TRANSISTORS Epitaxial base - Ic m : 1 -*• 3 A, Vc e o : 22 — 100 V Internal schem atic diagram s


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    BD901

    Abstract: case BD901 BD899 BD645
    Text: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)


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    PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, BD901 case BD901 BD899 BD645

    Untitled

    Abstract: No abstract text available
    Text: N AflER P H IL IP S / D IS C R E T E - ^ 5 3 ^ 3 1 2SE D O D l^ S A 1 • BD 241; BD 241A B D 241B ; BD 241C T - 23-// S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier


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    PDF BD242; BD241 BD241; BD241A BD241B; BD241C bbS3131 bb53T31

    bdt65b

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are


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    PDF BDT65; BDT65B; BDT64; BDT65 O-220. 7Z82329 bdt65b

    TRANSISTOR BFW 11

    Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    PDF O-237 TRANSISTOR BFW 11 BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor

    bfw10 transistor

    Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    PDF O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


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    PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: v is s a s ? QoeaM si S G S - T U O M S O N î[L[lCT ^ [M D©S b B D 6 7 5 /7 5 A /7 7 /7 7 A /7 9 /7 9 A /8 1 B D 6 7 6 /7 6 A /7 8 /7 8 A /8 0 /8 0 A /8 2 S G S-THOMSON 3DE » MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679,


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    PDF BD675, BD675A, BD677, BD677A, BD679, BD679A BD681 O-126 BD676, BD676A,

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    bdx538

    Abstract: BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A
    Text: MO TO RO LA SC 12E D I b3b?BS4 0004703 1 I X S T RS/R F • " NPN B0X53 BDX53A BDX53B BDX53C MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEM ENTARY SILICON TRANSISTORS DA RLIN G TO N 8 AMPERE .d e s ig n e d fo r general-purpose a m p lifie r and low-speed sw itc h in g


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    PDF B0X53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX53, X53Ai bdx538 BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    sd317

    Abstract: Motorola 3-326 transistor SS3672 BD317 BD318 BD315 BD-316 H2525 transistor BP 109 S357
    Text: motorola -c x s t r s / r sc »FJt.3t.7aSM fj 6 3 6 7 2 5 4 ; MOTOROLA SC CXS T RS / R F 96D 80590 NPN B D 315, B D 316 PNP BD317, BD318 M OTOROLA SEMICONDUCTOR TECHNICAL DATA C O M P L E M E N T A R Y SILICON HIGH-POW ER T R A N S IS T O R S . OGfi OSTD


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    PDF BD315, BD316 BD317, BD318. BD315 BD317 BD318 AN-415) b3b755M sd317 Motorola 3-326 transistor SS3672 BD-316 H2525 transistor BP 109 S357