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    BD BF Search Results

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    BD BF Price and Stock

    Schurter Electronic Components DG12-CBDBF040C0-000-C6135-420-1000-00

    PWR ENT MOD RCPT IEC320-C14 PNL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DG12-CBDBF040C0-000-C6135-420-1000-00 Box 66 1
    • 1 $43.07
    • 10 $35.111
    • 100 $28.9725
    • 1000 $28.9725
    • 10000 $28.9725
    Buy Now

    Silicon Motion Technology Corp SM662GBD-BFST

    IC FLASH 1TBIT EMMC 100BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SM662GBD-BFST Tray 5 1
    • 1 $48.86
    • 10 $43.371
    • 100 $38.926
    • 1000 $36.83743
    • 10000 $36.83743
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    SM662GBD-BFST Bulk 1
    • 1 $44.5
    • 10 $44.5
    • 100 $44.5
    • 1000 $44.5
    • 10000 $44.5
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    Silicon Motion Technology Corp SM662GBD-BFSS

    IC FLASH 320GBIT EMMC 100BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SM662GBD-BFSS Tray 5 1
    • 1 $48.86
    • 10 $43.371
    • 100 $38.926
    • 1000 $36.83743
    • 10000 $36.83743
    Buy Now
    SM662GBD-BFSS Bulk 1
    • 1 $44.5
    • 10 $44.5
    • 100 $44.5
    • 1000 $44.5
    • 10000 $44.5
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    Silicon Motion Technology Corp SM662PBD-BFST

    IC FLASH 1TBIT EMMC 153BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SM662PBD-BFST Tray 5 1
    • 1 $48.52
    • 10 $43.066
    • 100 $38.65175
    • 1000 $36.57787
    • 10000 $36.57787
    Buy Now

    Silicon Motion Technology Corp SM662PBD-BFSS

    IC FLASH 320GBIT EMMC 153BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SM662PBD-BFSS Tray 4 1
    • 1 $48.52
    • 10 $43.066
    • 100 $38.65175
    • 1000 $36.57787
    • 10000 $36.57787
    Buy Now

    BD BF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800TD

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.


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    PDF DS05-20871-3E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball MBM29SL800TD/MBM29SL800BD 800TD FPT-48P-M19 FPT-48P-M20

    FPT-48P-M19

    Abstract: FPT-48P-M20 2 PIN DIODE MARKED BD BD75
    Text: MBM29PL160TD/BD-75/90 Data Sheet Retired Product MBM29PL160TD/BD -75/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29PL160TD/BD-75/90 MBM29PL160TD/BD DS05-20872-4E F0306 ProductDS05-20872-4E FPT-48P-M19 FPT-48P-M20 2 PIN DIODE MARKED BD BD75

    FPT-48P-M19

    Abstract: FPT-48P-M20 12PW 38
    Text: MBM29SL800TD/BD-10/12 Data Sheet Retired Product MBM29SL800TD/BD -10/12 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    PDF MBM29SL800TD/BD-10/12 MBM29SL800TD/BD DS05-20871-6E F0210 ProductDS05-20871-6E FPT-48P-M19 FPT-48P-M20 12PW 38

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    PDF DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD F0210 FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    PDF DS05-20871-4E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball 48-ball MBM29SL800TD/MBM29SL800BD

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball


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    PDF DS05-20871-5E MBM29SL800TD/BD-10/12 MBM29SL800TD/BD 48-pin 48-ball

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The


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    PDF DS05-20872-3E MBM29PL160TD/BD-75/90 MBM29PL160TD/BD 48-pin 44-pin MBM29PL160TD/160BD F0306 FPT-48P-M19 FPT-48P-M20

    CHN 749

    Abstract: CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64
    Text: 74C{},|,3/ >;861 >?.?2 =28.D /IGS7;0 3IFUVSIT \ \ \ \ \ \ \ \ \ Gcf_ Ni@ F799:>7 DQD68667667?9< :666V ^c_f_]nlc] mnl_hanb Pbini cmif[ncih Cocfn3ch mho\\_l Z_li ]limm il l[h^ig nolh3ih TRJBD BD ionjon P[h_f giohn ED il BD ]ihnlif Wcnb LFE ch^c][nil il hin Fhpclihg_hn[f jlin_]ncih jli^o]n [p[cf[\f_


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    PDF DQD68667667 KHX37 9398VED2 776VBD2 886VBD 666Vlgm ggX884 98VED /776r CHN 749 CHN 647 CHN 648 CHN 649 CHN 948 B0647 CHN 025 F799 li 1766 chn 64

    chn 537

    Abstract: chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761
    Text: \[]{},|,3/ =:761 =>.>2 <27.B 3GDRSPGQ X 9555V ^c_f_]nlc] mnl_hanb X Pbini cmif[ncih X Cocfn2ch mho\\_l Gcf_ Ni? F6889=6 X TRJBD BD ionjon X P[h_f giohn X ED il BD ]ihnlif DQD57556556>8; X Wcnb LFE ch^c][nil il hin 4292<.7 12=0<6;>6:9 Tb_ KHX26:5:GC i``_l 8287VED il >527=5VBD chjon ]ihnlif1qcnb


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    PDF F6889 DQD57556556 KHX26 8287VED 95Bgjm3Bff 9555Vlgm 39ggX9 E2YB65Y E2YB75Y E2YB95Y chn 537 chn 638 CHN 536 chn 538 chn 53 b CHN 65 CHN 647 e8 gg 65vl BD 761

    145442

    Abstract: MC145441
    Text: , 14 MOTOROM ~C. E~OPW SE~COmUCTOR DMSION . SYSTEM ENGINEE~NG COMMU~CATI@#@ 300 BD MODEM , . Wepmed by: Bemad DUGE~IL September 86 1.:, , ,.\ .“ . . . . . . —— . MOTDRO~ EUROPEAN SEMICONDUCTOR DIVISION Q .* MC 145442 MOTOROM EURDPEAN SEMtCON’SUC .d


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    PDF

    NTH4G39A1

    Abstract: PTH8L PTh9c32 NTH5G1M PTH9MO4BH471 bh 8550 posistor 16 PTH8 J04TE NTH4G
    Text: WILLOW Technologies Sensors Thermistors - temperature sensing PTH9C32 Series PTC Order Code Curie Point °C Resistance Value (Ω)(at 25°C) Temp. (°C) (at 4.7k Ω) AR(120) BB(100) BD(80) 470±50% 135±10 115±10 95±10 PTH9C32AR471Q-T PTH9C32BB471Q-T


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    PDF PTH9C32 PTH9C32AR471Q-T PTH9C32BB471Q-T PTH9C32BD471Q-T PTH9MO4BH471 TS2F333 PTH9MO4BG471 PTH9MO4BF471 NTH4G39A1 PTH8L NTH5G1M bh 8550 posistor 16 PTH8 J04TE NTH4G

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


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    PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    J165

    Abstract: BD167 bf 169 BD 166, 168, 170
    Text: BD 165 BD 167 BD 169 NPN SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SIL IC IU M NPN, BASE EPITAXIES Compì. BD 166, BD 168, BD 170 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    IC 74 series

    Abstract: 74 Series IC BM 72 A BDF52
    Text: SE R IE S INDEX ! : . : ; ! : BA-10x1 UD Series BA-12x3UD Series BA-2x2UW Series BA-5x5UD Series BA-8x6UW Series BA-9x4AD Series BA-9x4CD Series BB-Bxx74 Series BB-Bxx74-A Series BD-A51xxx Series BD-A53xxx Series BD-A54xxx Series BD-C51xxx Series BD-C53xxx Series


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    PDF BA-10x1 BA-12x3UD BB-Bxx74 BB-Bxx74-A BD-A51xxx BD-A53xxx BD-A54xxx BD-C51xxx BD-C53xxx BD-C54xxx IC 74 series 74 Series IC BM 72 A BDF52

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    BC 677

    Abstract: Tfk 680 BD675 bc 681 BD677 BD681 BD 677 BD 681 2DIN125A 2mA80
    Text: V BD 675 • BD 677 • BD 679 •BD 681 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Sehr hohe Stromverstärkung Features: • Very high current transfer ratio


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    PDF BD675 BD677 BD679 BD681arecomple-mentà BD678, BD680, BD682 mentarytoBD676 BD678 BD680 BC 677 Tfk 680 bc 681 BD681 BD 677 BD 681 2DIN125A 2mA80

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


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    PDF DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711

    bb 36 931

    Abstract: BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931
    Text: moulded bridges o ponts moulés THOMSON-CSF Vr = Types 15A 141 8 A ,1 BY BA BB BD BF BH 26 26 26 26 26 26 933 933 933 933 933 933 BY 38 BA 38 BB 38 BD 38 BF 38 BH 38 10A‘1» BY BA BB BD BF BH 36 36 36 36 36 36 933 933 933 933 933 933 15A 1> 931 931 931


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    PDF 200/15A 400/25A 35A131 bb 36 931 BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931

    LT 238

    Abstract: BD 238 BD234
    Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    PDF

    TRANSISTOR BC 136

    Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
    Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


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    PDF T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711

    Untitled

    Abstract: No abstract text available
    Text: _ 6 Rev APPROVED: - Description AWO# - Date 9/08/10 RELEASED Appr TITLE: DATE:_ .050 [1 .2 7 ] ft f t ft f t B 4B D I 2 b b 13 b b f t b f i - Q ft f t Î A f t ~ 4 D D D D D B bD bB bD bB Bfl I , .050 [1 .2 7 ] t ft f t ft b b b b b .016 [0 .4 0 ] SQ


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    PDF 0019C

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


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    PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995

    Untitled

    Abstract: No abstract text available
    Text: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.


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    PDF BDV65; BDV65B; bb53T31 003Mflm BDV65B:

    PTH59F

    Abstract: PTH9M04BH471 PTH9M04BF471 PTH9C22BB471Q-T PTH9M04BE471 NTC 222 PTH9M04 PTH9M04BB471 PTC NTC SENSORS PTH5SF04BH471
    Text: SENSORS PTC THERMISTORS POSISTOR FOR TEMPERATURE SENSORS NTC THERMISTORS FOR TEMPERATURE SENSORS 5R TEMPERATURE SENSOR;- H ERMI STO IPTH9C22 Series Part Number Curie Point (1C) PTH9C22AR471Q-T AR(120) PTH9C22BB471Q-T BB(100) PTH9C22BD471 Q-T BD(80) Resistance Value


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    PDF IPTH9C22 PTH9C22AR471Q-T PTH9C22BB471Q-T PTH9C22BD471 /180mm PTH59F PTH9M04BH471 TS2F333 PTH9M04BG471 PTH9M04BH471 PTH9M04BF471 PTH9M04BE471 NTC 222 PTH9M04 PTH9M04BB471 PTC NTC SENSORS PTH5SF04BH471