BD 175 TRANSISTOR Search Results

BD 175 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BD 175 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD178 Abstract: BD176 BD180 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180
Untitled Abstract: No abstract text available Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD176/178/180 O-126 BD176 BD178 BD180 BD180
BD178 Abstract: BD176 BD180 transistor bd176 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180 transistor bd176
transistor bd176 Abstract: BD176 BD178 BD180 transistor BD 325 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD176/178/180 O-126 BD176 BD178 BD180 transistor bd176 BD176 BD178 BD180 transistor BD 325
BD176 Abstract: transistor bd176 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD176/178/180 O-126 BD176 BD178 BD180 BD180 BD176 transistor bd176
Untitled Abstract: No abstract text available Text: Part Number: Integra IDM175CW300 TECHNOLOGIES, INC. VHF-Band RF Power MOSFET The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 MHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of	Original	PDF	IDM175CW300 IDM175CW300 250mA D5001 D5001 IDM175CW300-REV-NC-DS-REV-NC
Untitled Abstract: No abstract text available Text: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for	Original	PDF	IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A
BD NPN transistors 177 Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a Text: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range	OCR Scan	PDF	CEOsus80 BD NPN transistors 177 IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
Untitled Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage	OCR Scan	PDF	BD176/178/180 BD176 BD178 BD180 BD176 BD178
transistor bd176 Abstract: bd178 bd180 E434 Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45	OCR Scan	PDF	BD176/178/180 O-126 BD176 BD178 BD180 150mA 250mA transistor bd176 bd178 bd180 E434
transistor bd 180 Abstract: BD transistor BD 176 transistor bd176 Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol ’ C ollector Base Voltage : BD176 : BD178 C ollector E m itter Voltage	OCR Scan	PDF	BD176/178/180 transistor bd 180 BD transistor BD 176 transistor bd176
Untitled Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ’ C ollector Base V oltage Sym bol Rating Unit - 45 V - 60 V - 80 V - 45	OCR Scan	PDF	BD176/178/180 BD178 BD180 BD176
bd 142 transistor Abstract: bd 109 transistor BD175 BD 139 transistor K1461 BD175.6 BD177 10 watt power transistor bd bd 731 BD179 Text: Tb M O T O R O L A SC -CXSTRS/R F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R DlF\|b3b7aS4 96D F MOTOROLA 80559 B D 1 7 5 ,- 6 ,- 1 0 ,- 1 6 SEMICONDUCTOR B D 1 7 7 ,- 6 ,- 1 0 TECHNICAL DATA B D 1 7 9 ,- 6 ,- 1 0 PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3 AM PERE	OCR Scan	PDF
IC 74157 Abstract: to 126 leistungstransistoren BD 176 BD176 BD180 BD178 "BO 180" B0180 TFK F BD 175 TFK G BD 175 Text: ► BD 176 • BD 178 • BD 180 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Verstärker, -Treiber und -Endstufen Allgemein im NF-Bereich Applications: Audio amplifier, driver and output stages General in AF-range	OCR Scan	PDF	N125A IC 74157 to 126 leistungstransistoren BD 176 BD176 BD180 BD178 "BO 180" B0180 TFK F BD 175 TFK G BD 175

transistor SE 431 Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem en t to B D 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a se V o lta g e Sym bol : BD176 Rating Unit	OCR Scan	PDF	BD176/178/180 BD176 BD178 transistor SE 431
tip 220 Abstract: SGS TIP 32 BD NPN transistors 177 tip 31 mje370 transistor bd 126 To 126 TIP31 NPN Transistor diagram mje520 2n 4918 9 218 Text: ¿t 7 SGS'THOMSON GMO SIMSi[LI(S?[MM(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR TO 39 SOT 194 SOT 93 TOP 31 ISOWATT 218 TO 220 TO 3 ISOWATT 220 EPITAXIAL BASE TRANSISTORS Epitaxial base - Ic m : 1 -*• 3 A, Vc e o : 22 — 100 V Internal schem atic diagram s	OCR Scan	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Array resistor 1K Abstract: No abstract text available Text: ALA300/301 90 Volt Linear Arrays Description The ALA300 and ALA301 Linear Arrays provide design engineers the means to obtain 90 V semicustom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP transistors, three 6 pF capacitors, and 1 kO diffused and 10 kQ ion-implanted resistor banks. The quadmodule array (ALA301) is identical to the single-module array (ALA300) but has four times the number of	OCR Scan	PDF	ALA300/301 ALA300 ALA301 ALA300) ALA301) 3-02A/04 DS89-118LBC DS88-160LBC. Array resistor 1K
lem HA 10000 Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B Text: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A	OCR Scan	PDF	BDW23/A/B/C BDW24, BDW24A, BDW24B BDW24C BDW23 BDW23A BDW23B BDW23C lem HA 10000 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	PDF	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Q60204-Y12-B Abstract: BDV13 Q60204-Y13-D BDY12 BDY13 Q62901-B16-A 510Z5 Text: NPN-Transistoren für NF-Endstufen und Schalteranwendungen BDY12 BDY13 B D Y 1 2 und B D Y 1 3 sind epitaktische NPN-Silizium-Planar-Leistungstransistoren im Gehäuse 9 A 2 DIN 41 875 S O T -9 . Der Kollektor ist mit dem Gehäuse elektrisch ver bunden. Für die isolierte Befestigung der Transistoren auf einem Chassis sind je 1 Glimmer	OCR Scan	PDF	BDY12 BDY13 Q60204-Y12-B Q60204â Y13-C Q60204-Y12â Q60204-Y13-D Q62901-B16-A Q60204-Y13-B BDV13 Q60204-Y13-D Q62901-B16-A 510Z5
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
93c100 Abstract: No abstract text available Text: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A	OCR Scan	PDF	BDW93/A/B/C 93c100
BDW93C Abstract: BDW93 NPN Transistor TO220 VCEO 80V 100V bdw93c applications BDW93C TRANSISTOR 100MA 45 V NPN BDW94 BDW93A BDW93B BDW94A Text: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector E m itter V o lta g e : BD W 93	OCR Scan	PDF	BDW93/A/B/C BDW94, BDW94A, BDW94B BDW94C BDW93 BDW93A BDW93B BDW93C BDW93C NPN Transistor TO220 VCEO 80V 100V bdw93c applications BDW93C TRANSISTOR 100MA 45 V NPN BDW94 BDW93A BDW93B BDW94A

BD 175 TRANSISTOR Search Results

BD 175 TRANSISTOR Result Highlights (5)

BD 175 TRANSISTOR Datasheets Context Search

BD178

Untitled

BD178

transistor bd176

BD176

Untitled

Untitled

BD NPN transistors 177

Untitled

transistor bd176

transistor bd 180

Untitled

bd 142 transistor

IC 74157

transistor SE 431

tip 220

bc 540

Array resistor 1K

lem HA 10000

BDX 241

Q60204-Y12-B

SSY20

93c100

BDW93C