AX5621
Abstract: No abstract text available
Text: 19-2715; Rev 2; 1/06 16-Bit DACs with 16-Channel Sample-and-Hold Outputs Ordering Information PART PIN-PACKAGE 64 TQFP MAX5621UTK 68 Thin QFN-EP* MAX5622UCB 64 TQFP MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation
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16-Bit
16-Channel
MAX5621/MAX5622/MAX5623
100kHz
AX5621
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KVL01
Abstract: No abstract text available
Text: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in
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MC100LVEL01
LVEL01
KVL01
AND8020
AN1404
AN1405
AN1406
AN1503
AN1504
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E140173
Abstract: SERVO MOTOR 50 PIN CONNECTOR analog servo PIC16F877A circuit diagram Advanced Motion Controls ac servo drive ac motor servo control circuit diagram transistor servo drive dc servo motor encoder ADVANCED MOTION CONTROLS PWM
Text: Analog Servo Drive Description BD15A8 Power Range The BD15A8 PWM servo drive is designed to drive brushless DC motors at a high switching frequency. It is fully protected against over-voltage, over-current, over-heating and short-circuits. The drive interfaces
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BD15A8
BD15A8
E140173
SERVO MOTOR 50 PIN CONNECTOR
analog servo
PIC16F877A circuit diagram
Advanced Motion Controls
ac servo drive
ac motor servo control circuit diagram
transistor servo drive
dc servo motor encoder
ADVANCED MOTION CONTROLS PWM
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QFN-68
Abstract: LQFP-64 footprint 21-0142E AX5631 MAX5633UTK T MAX5632UCB D t6800
Text: 19-2171; Rev 3; 1/05 16-Bit DACs with 32-Channel Sample-and-Hold Outputs Ordering Information PART TEMP RANGE* MAX5631UCB 0°C to +85°C 64 TQFP MAX5631UTK 0°C to +85°C 68 Thin QFN MAX5632UCB 0°C to +85°C 64 TQFP MAX5632UTK 0°C to +85°C 68 Thin QFN MAX5633UCB
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16-Bit
32-Channel
MAX5631/MAX5632/MAX5633
100kHz
QFN-68
LQFP-64 footprint
21-0142E
AX5631
MAX5633UTK T
MAX5632UCB D
t6800
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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0x01FFFFFF
Abstract: transistor BD 522 08FF ARM7500
Text: 1 14 11 Memory Subsystems 14.1 ROM interface 14-2 14.2 DRAM interface 14-7 14.3 DMA channels 14-16 ARM7500 Data Sheet ARM DDI 0050C Preliminary - Unrestricted This chapter describes the ROM and DRAM interfaces, and the DMA channels. 14-1 Memory Subsystems
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ARM7500
0050C
0x00000000
0x01FFFFFF,
32-bits
0x01FFFFFF
transistor BD 522
08FF
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LQFP-64 footprint
Abstract: No abstract text available
Text: 19-3563; Rev 1; 5/05 12-Bit DACs with 32-Channel Sample-and-Hold Outputs _Applications MEMS Mirror Servo Control Industrial Process Control Automatic Test Equipment Instrumentation Ordering Information PART TEMP RANGE PIN-PACKAGE MAX5331UCB
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12-Bit
32-Channel
MAX5331/MAX5332/MAX5333
MAX5331/MAX5332/MAX5333
100kHz
LQFP-64 footprint
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motorola 1N4148
Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module
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DSP56301ADM
DSP56301ADMUM/AD
DSP56301
DSP56301ADM)
Augat/RD1-MC6-P102-02
30-pin
TSM11501SDV
14-pin
TSM10701SDV
20-pin
motorola 1N4148
JP13
MCM54800AJ70
HC94U-27
qs3245sog
DSP5603
seiko hc 1000
GRM42-6COG* murata
GRM42-6CO
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SC08810
Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
SC08810
B0435
d433
bd 149
D435
BD437-BD438
BD 435
d437
BD PNP
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BD 149 transistor
Abstract: bd 317 BD315 bd318 transistor D317 BD317
Text: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith
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BD315,
BD318.
AN-415)
BD 149 transistor
bd 317
BD315
bd318
transistor D317
BD317
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zt158
Abstract: BD 149 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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IS22I
MRF20030
zt158
BD 149 transistor
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sot-23 Marking LG
Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
Text: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed
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CMPF4416A
OT-23
sot-23 Marking LG
code 619 sot-23
transistor marking code lg
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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2SA1038
Abstract: 2SA1039
Text: h ~P > y X 3?/T ra n s is to rs 2SA1038/2SA1039 y ' J - 1> h 7 > ' > ^ $ " s i i t e f f l /High Voltage Low Freq. Low Noise Amp. Epitaxial Planar PNP Silicon Transistors rtifliiJEEfliJi • ü - f f i \ t " ; £ E 3 / Dim nsions U n it : mm 1) S Ü 8 Œ T & 5 (V c e o = - 8 0 V , - 1 2 0 V ) o
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2SA1038/2SA1039
2SC2389,
2SC2389
2SC2390.
2SA1038
2SA1039
2SA1038
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Untitled
Abstract: No abstract text available
Text: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126
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BD233,
BD235
BD237
O-126
BD234,
BD236
BD238
BD233
BD234
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BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
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BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
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SP126
Abstract: No abstract text available
Text: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt
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OT-23
OT-223
OT-89,
OT-143,
EIA-RS481A
IEC286-3
BB215
PB219
PZT2907A
SP126
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2sd155
Abstract: SN232 BLY92 2SD154 BD109 BLY88 TIP27 MD17A X51c stc1201
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors kI B H H LINE No. TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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NPN110.
BLY88
BLY92
700MI
500MI
MT72C
BUY43
MHT5901
MHT5902
10On0
2sd155
SN232
BLY92
2SD154
BD109
TIP27
MD17A
X51c
stc1201
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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VEB mikroelektronik
Abstract: mikroelektronik DDR mikroelektronik RFT elektronik DDR DDR Schaltkreise bauelemente DDR elektronische bauelemente rft Transistoren DDR service-mitteilungen RFT Service Mitteilung
Text: RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Ausgabe ¡^M\radio-te/evision\ Ckt. 1988 f VEB 00 SERVICE-MITTEILUNGEN Seite 1-9 Mitteilung aus dem VEB RFT IV RuF Leipzig/Servicevorbereitung Effektive Eroduktionstechnologie in der KonBumguterelektronik - kontra Heparaturtechnologie ?
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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BD264
Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C
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