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    BCY 12 Search Results

    BCY 12 Result Highlights (1)

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    LM143H/883 Rochester Electronics LLC Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8 Visit Rochester Electronics LLC Buy
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    Bivar Inc H131CBC-Y/G-120

    LED Circuit Board Indicators LED Assembly, Right Angle, 3mm LED, Single Level, 1 Station, Bi-Color Yellow/Green, White Diffused Lens.
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    Bivar Inc PM3BC-Y/GW12.0

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    Eaton Corporation XTSC012BCY

    Contactors - Electromechanical MMC FVNR 8-12A B-MMP C-Cont 1NO 48/50
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    Eaton Corporation XTFC012BCY

    Contactors - Electromechanical CMC TYP F FVNR 8-12A B-MMP C-Cont 1NO 48
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    Eaton Corporation XTSR012BCY

    Contactors - Electromechanical MMC FVR 8-12A B-MMP C-Cont 48/50
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    BCY 12 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BCY12 Unknown Shortform Transistor Datasheet Guide Short Form PDF
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    BCY 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCY71

    Abstract: BCY 107 BCY72 100-C bcy72a bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applica­ tions. ABSOLUTE MAXIMUM RATINGS


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    65e7

    Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
    Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.


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    PDF Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65

    TRANSISTOR A104

    Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
    Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general


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    PDF BCY58 Ic-10â R2-700ohm TRANSISTOR A104 BCY59C BCY 85 A104 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15

    BCY 107

    Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica­ tions.


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    PDF G--18S1 BCY 107 BCY 62 BCY71 BCY72 BCY 12 bcy70

    BCY79

    Abstract: bcy 78 bcy 79
    Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages


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    PDF i-10mA 990i2, BCY79 bcy 78 bcy 79

    BCY 59

    Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
    Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­


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    PDF Q60203- BCY 59 BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


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    PDF BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59

    BCY 68

    Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors


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    PDF 23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 68 0431I BCY68 BCY 59

    BCY59

    Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors


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    PDF 23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 85 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G

    BCY792

    Abstract: bcy 79 Q62702-C327 BCY78 BCY77 BCY 78 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 78-IX
    Text: 5SC T> m fi23SbOS D00432S 7 « S I E G r . PNP Silicon Planar Transistors BCY77 D _BCY78 BCY 79 25C 04325 SIEMENS A K T I E N 6 E S E L L SCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


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    PDF 23Sb05 QQ0432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J BCY792 bcy 79 BCY78 BCY77 BCY 78 78-IX

    1B57

    Abstract: BCY78 BCY79
    Text: SILICON PLANAR PNP BCY78 BCY79 LO W -N O IS E A U D IO A M P L IF IE R S The BCY 78 and BCY 79 are silicon planar epitaxial PNP transistors in Jed ecT O -18 metal case. They are designed fo r use in audio driver and low -noise in p u t stages. The com plem entary NPN types are respectively the BCY 58 and BCY 59.


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    PDF BCY78 JedecTO-18 G-1B57 BCY79 G-1860 1B57 BCY78 BCY79

    BCY77

    Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


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    PDF BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor

    BCY77VII

    Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


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    PDF BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor

    Q62702-C327

    Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
    Text: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


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    PDF 53SbOS G00432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J Q62702-C327 Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792

    AS5V

    Abstract: Q62702-C254 BCY 85 PNP-Transistoren
    Text: PNP-Transistoren fü r rauscharme N F-Vorstufen BCY 67 BCY 67 ist ein epitaktischer PNP-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41 876 T O -1 8 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist be­ sonders für rauscharme NF-Vorstufen verwendbar (Komplementärtransistoren dazu BCY 66).


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    PDF Q62702-C254 10ZKHz AS5V Q62702-C254 BCY 85 PNP-Transistoren

    TFK 450 B2

    Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
    Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W


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    tfk 731

    Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
    Text: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W


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    BCY59

    Abstract: BCY58 BcY591
    Text: BCY58 BCY59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial IMPN transistors in Jledec T O -1 8 metal case. They are intended fo r use in audio in p u t stages, driver stages and low-noise in put stages. The com plem entary PNP types are respectively the BCY 78 and !BCY 79.


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    PDF BCY58 BCY58 BCY59 BCY59 BcY591

    transistor buv 90

    Abstract: BCY 85 Q60203-Y66 BCY 66
    Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).


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    PDF Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66

    jm 20329

    Abstract: No abstract text available
    Text: PNP Silicon Transistors PNP Silicon Planar Transistors fo r low-level audio applications Common maximum ratings Pto t <T amb= 25 C Tvpe TO-Ì 8 Case BVC fO V BVCSO V V PN 70 PN 711 PN 72 BCY BCV BCY NKT 40 45 25 30 50 45 25 30 5 5 5 4 70 711 72 20329 ^ Noise figure


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    PDF V/10mA) BCY70/112 350mW, jm 20329

    BCY59IX

    Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
    Text: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES


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    PDF 00flt BCY58 BCY59-VII, BCY59, BCY58/BCY59) BCY59IX bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii

    BCY791x

    Abstract: bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA
    Text: MOTOROLA SC XSTRS/R 12E D | F b3fci72S4 QGflt.M73 7 | r -y t - z I BCY78-VII, -Vili, -IX, -X BCY79-VII, -Vili, -IX, -X MAXIM UM RATINGS R a tin g Coliector-Em itter Voltage S ym b o l BCY 78 BCY 79 U n it VCEO 32 45 Vdc Co llector-Em ittar Voltage R B E 10 Ohm s


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    PDF BCY78-VII, BCY791x bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA

    Siemens 1736

    Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
    Text: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 0235bG5 Q004312 BCY66 Q60203-Y66 TcaseS45Â fi23Sb05 Q0QM31? 120Hz Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312

    BCY69

    Abstract: BCY 69 transistor 468
    Text: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation


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