BC860BW |
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Diotec
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Surface mount Si-Epitaxial PlanarTransistors |
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PDF
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BC860BW |
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Infineon Technologies
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Low Noise Transistors; Package: PG-SOT323-3; Polarity: PNP; VCEO (max): 45.0 V; Ptot (max): 250.0 mW; hFE (min): 220.0; IC: 2.0 mA; |
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Original |
PDF
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BC860BW |
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Infineon Technologies
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PNP Silicon AF Transistor |
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Original |
PDF
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BC860BW |
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Infineon Technologies
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PNP Silicon AF Transistors |
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Original |
PDF
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BC860BW |
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Infineon Technologies
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SOT323 package |
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Original |
PDF
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BC860BW |
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NXP Semiconductors
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BC860BW - PNP general purpose transistors - Complement: BC850BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V |
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PDF
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BC860BW |
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Philips Semiconductors
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PNP general purpose transistors |
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Original |
PDF
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BC860BW |
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Siemens
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PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
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Original |
PDF
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BC860BW,115 |
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NXP Semiconductors
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PNP general purpose transistors - Complement: BC850BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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Original |
PDF
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BC860BW,135 |
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NXP Semiconductors
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PNP general purpose transistors - Complement: BC850BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd |
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Original |
PDF
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BC860BWE6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP AF 45V SOT-323 |
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PDF
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BC860BWE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 45V 0.1A SOT-323 |
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Original |
PDF
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BC860BWH6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS AF PNP 45V 100MA SOT323 |
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Original |
PDF
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BC860BWH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 45V 0.1A SOT323 |
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Original |
PDF
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BC860BWT/R |
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NXP Semiconductors
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PNP general purpose transistors - Complement: BC850BW ; fT min: 100 MHz; hFE max: 475 ; hFE min: 220 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V |
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Original |
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