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    BC847ALT1G Price and Stock

    onsemi BC847ALT1G

    TRANS NPN 45V 0.1A SOT23-3
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    DigiKey BC847ALT1G Digi-Reel 47,686 1
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    BC847ALT1G Cut Tape 47,686 1
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    BC847ALT1G Reel 42,000 3,000
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    Avnet Americas BC847ALT1G Ammo Pack 13 Weeks, 4 Days 1
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    BC847ALT1G Reel 10 Weeks 57,000
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    Mouser Electronics BC847ALT1G 44,696
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    Verical BC847ALT1G 65,568 14,085
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    BC847ALT1G 48,000 3,000
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    BC847ALT1G 15,994 14,085
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    Arrow Electronics BC847ALT1G 2,899 1
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    Newark BC847ALT1G Reel 9,000 3,000
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    BC847ALT1G Cut Tape 1 1
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    Future Electronics BC847ALT1G Reel 120,000 10 Weeks 3,000
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    BC847ALT1G Reel 10 Weeks 54,000
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    BC847ALT1G Reel 10 Weeks 54,000
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    Onlinecomponents.com BC847ALT1G 48,000
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    Bristol Electronics BC847ALT1G 4,379
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    BC847ALT1G 2,505
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    BC847ALT1G 975 75
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    Quest Components BC847ALT1G 2,004
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    BC847ALT1G 2,004
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    BC847ALT1G 1,440
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    BC847ALT1G 780
    • 1 $0.09
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    Rochester Electronics BC847ALT1G 93,562 1
    • 1 $0.025
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    TME BC847ALT1G 987 1
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    ComSIT USA BC847ALT1G 11,414
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    Avnet Asia BC847ALT1G 10 Weeks 72,000
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    Avnet Silica BC847ALT1G 189,000 11 Weeks 3,000
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    Chip1Stop BC847ALT1G Cut Tape 7,213
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    EBV Elektronik BC847ALT1G 15,000 12 Weeks 3,000
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    Flip Electronics BC847ALT1G 18,000
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    Master Electronics BC847ALT1G 48,000
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    New Advantage Corporation BC847ALT1G 159,000 1
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    Win Source Electronics BC847ALT1G 83,385
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    Wuhan P&S BC847ALT1G 404 1
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    . BC847ALT1G

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BC847ALT1G 2,725
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    Others BC847ALT1G

    100 MA, 45 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BC847ALT1G 2,043
    • 1 $0.123
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    • 1000 $0.041
    • 10000 $0.0246
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    Chip 1 Exchange BC847ALT1G 2,566
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    BC847ALT1G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC847ALT1G On Semiconductor BC847 - TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN, BIP General Purpose Small Signal Original PDF
    BC847ALT1G On Semiconductor General Purpose Transistor NPN Original PDF

    BC847ALT1G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SBC846B

    Abstract: BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES SBC846ALT1G 1G t 90 SOT-23 SBC847C
    Text: BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable


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    PDF BC846ALT1G SBC846ALT1G AEC-Q101 BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC846B BC850BLT1G marking 1a bc847blt1g SBC847BLT1 SBC846ALT1G SERIES 1G t 90 SOT-23 SBC847C

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


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    PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    IEC-6100-3-2

    Abstract: NLT282224W3P4020S5P10F 1N4007 SOD123 2512 resistor IEC6100-3-2 1N4007 sma choke wurth 817 OPTO-coupler 817 OPTO 102-s41-w-103
    Text: DN06040/D Design Note – DN06040/D Universal Input, 20 W, LED Ballast Device Application Input Voltage Output Power Topology I/O Isolation NCP1351 Solid State Lighting 85 – 265 Vac 20 W Flyback Yes Other Specifications Output 1 Maximum Output Voltage Ripple


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    PDF DN06040/D NCP1351 NCP1351 IEC-6100-3-2 NLT282224W3P4020S5P10F 1N4007 SOD123 2512 resistor IEC6100-3-2 1N4007 sma choke wurth 817 OPTO-coupler 817 OPTO 102-s41-w-103

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010

    MARKING 358 sot-23

    Abstract: marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3


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    PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23

    FR SOT23-3

    Abstract: BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A BC846ALT1 BC847 1G SOT-23 BC848
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3


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    PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 FR SOT23-3 BC847CLT1G 1B SOT23-3 BC848ALT1G BC846 BC846A 1G SOT-23

    NSVBC847BLT3G

    Abstract: No abstract text available
    Text: BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • http://onsemi.com ESD Rating − Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring


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    PDF BC846ALT1G BC846 BC847, BC850 BC848, BC849 BC846ALT1/D NSVBC847BLT3G

    Untitled

    Abstract: No abstract text available
    Text: BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • http://onsemi.com ESD Rating − Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring


    Original
    PDF BC846ALT1G BC846 BC847, BC850 BC848, BC849 BC846ALT1/D

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1

    transistor 1f sot-23

    Abstract: transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 marking codes transistors a1 sot-23 marking codes transistors sot-23 MARKING bc847 SOT-23 BC850CLT1G BC847BLT1G
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V


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    PDF BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 transistor 1f sot-23 transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 marking codes transistors a1 sot-23 marking codes transistors sot-23 MARKING bc847 SOT-23 BC850CLT1G BC847BLT1G

    BC847CLT1G

    Abstract: BC846 BC846A BC846ALT1G BC847 BC847A BC848 BC849 BC850 BC850B
    Text: BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • ESD Rating − Machine Model: >400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


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    PDF BC846ALT1G BC846 BC847, BC850 BC848, BC849 BC847CLT1G BC846 BC846A BC847 BC847A BC848 BC849 BC850 BC850B

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


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    PDF MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1

    CRCW08051001FKEA

    Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
    Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010

    CRCW08051001FKEA

    Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
    Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


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    PDF MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an


    Original
    PDF MMRF1316N MMRF1316NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


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    PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original
    PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original
    PDF MRF9080 MRF9080LR3

    atc100B100GT500XT

    Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    PDF MRF21010LSR1 MRF21010 atc100B100GT500XT ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi

    CRCW08052201FKEA

    Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,


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    PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


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    PDF MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35