BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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PDF
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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Original
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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PDF
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
|
Original
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA339
BA516
BA501
BA379
BA481
ba473
BA450
BA508
ba204
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PDF
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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Original
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K5L5628JT
115-Ball
80x13
ba508
BA311
BA340
BA516
BA512
BA516 diode
BA339
BA379
BA295
ba473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
|
Original
|
K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
|
PDF
|
ba508
Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
|
Original
|
K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
ba508
BA516 diode
BA512
BA507
ba358
BA339
BA505
BA459
BA516
BA329
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PDF
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BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
|
Original
|
K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA425
BA512
BA507
BA379
BA324
BA377
BA497
BA339
BA413
ba418
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PDF
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qfp240
Abstract: QFP-240 ecl86 ECL-10KH
Text: FUJITSU MIC RO ELECTRONICS 31E D ES 37417ka QOlMStS 7 B F H I ECL and BiCMOS ABIC BC-H BiCMOS Gate Array Device Description Device Name Cell Propagation Delav Complexity Maximum Number of Sianal Pins Number of Output Pins 64 TTL 60 (ECL) 32/32 (TTL/ ECL)
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OCR Scan
|
37417ka
BC4000H
BC8000H
BC12000H
BC16000H
BC8040H'
40Kbits
Fo135
QFP-240
qfp240
ecl86
ECL-10KH
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PDF
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