bc640
Abstract: bc636 bc638
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
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BC640
Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
BC640
bc636
Diode bc640
BC636-16
BC636ZL1
BC638
BC638ZL1
BC640-16
BC640ZL1
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bc640
Abstract: BC638 BC636
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
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BC640-16
Abstract: BC640 BC64 BC638G BC638 BC638ZL1 BC638ZL1G BC640G BC640ZL1 BC640ZL1G
Text: BC638, BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC638 BC640 Collector-Base Voltage Vdc −60 −80
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BC638,
BC640,
BC640-16
BC638
BC640
BC638/D
BC640-16
BC640
BC64
BC638G
BC638
BC638ZL1
BC638ZL1G
BC640G
BC640ZL1
BC640ZL1G
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bc640
Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Text: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter
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BC640
BC640
BC639
transistor bC640
BC640BU
BC639
BC640TA
BC640TAR
BC640TF
BC640TFR
transistor c 458
bc640 pnp
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24825
Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
24825
BC639
BC635
BC636
BC636-10
BC636-16
BC638
BC638-16
BC640
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bc640
Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
bc640
BC635
BC636
BC636-10
BC636-16
BC638
BC638-16
BC639
BC635 TRANSISTOR E C B
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BC640-16
Abstract: BC636 BC64 BC640 BC640ZL1G BC638 BC640G 2bc640
Text: BC640, BC640−16 High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage
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BC640,
BC640-16
BC640/D
BC640-16
BC636
BC64
BC640
BC640ZL1G
BC638
BC640G
2bc640
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bc638 equivalent
Abstract: bc640 equivalent bc636
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage
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BC636
BC638
BC640
BC636
BC638
226AA)
bc638 equivalent
bc640 equivalent
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BC640
Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC640
BC636
BC635
BC636-10
BC636-16
BC638
BC639
SC-43A
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BC327 SOT 23
Abstract: PZT2222AT1 BC639 sot
Text: Bipolar Transistors High Current Transistors w 500 mA V(BR)CEO IC mA Max Min Max MPSL51 100 600 40 250 BC489 BC490 80 1000 60 400 BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 − BC640 BC490A BC490B BC640−16
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BC489
BC639
BC489A
BC489B
BC639-16
BC447
MPS8099
MPSA06
MPS651
BC637
BC327 SOT 23
PZT2222AT1
BC639 sot
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BC640
Abstract: No abstract text available
Text: BC640 BC640 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -100 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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BC640
150mA
500mA,
-50mA
-500mA
BC640
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BC640
Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636
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BC636/BC638/BC640
BC636
BC638
BC640
bc636 transistor
bc640 pnp
bc640 transistor
Bc638 transistor PNP
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bc640
Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
bc640
st bc638
BC635 application note
bc638-10
BC635
BC636
BC636-10
BC638
BC639
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BC640
Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter
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BC636
BC638
BC640
BC636
BC638
150mA
BC640
transistor bC636
BC636-10
BC636-16
BC638-16
BC640-16
bc638 transistor
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bc640-016g
Abstract: 016G
Text: BC640-016G High Current Transistors PNP Silicon Features • This is a Pb−Free Device http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc Emitter-Base Voltage
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BC640-016G
BC640/D
016G
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Untitled
Abstract: No abstract text available
Text: BC635 THRU’ BC640 COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors for AF driver stages and amplifier applications up to 1A. ‘ TO-92 L Collector-Emitter Voltage
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BC635,
BC637,
BC639
BC636,
BC638,
BC640
3C637
BC638
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0
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BC636
BC638
BC640
b3b72SS
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bc640
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5
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BC636
BC638
BC640
BC640
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bc640c
Abstract: No abstract text available
Text: BC636 BC638 BC640 M A X IM U M RATINGS Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage Rating v CEO -4 5 -6 0 -8 0 Vdc Collector-Base Voltage v CBO -4 5 -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -5 .0 Collector Current — Continuous >C -0 .5 Ade Total Device Dissipation
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BC636
BC638
BC640
BC638
O-226AA)
bc640c
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c640 pnp
Abstract: c 64016 C 63816 c638 Philips 64016
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 07 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A
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BC636;
BC638;
BC640
BC639.
BC636
115002/00/03/pp8
c640 pnp
c 64016
C 63816
c638
Philips 64016
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bc638
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.
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BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC636
BC638
BC640
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BC640
Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
Text: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A
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BC635
BC640
BC635,
BC637,
BC639
BC636,
BC638,
BC640
BC636
BC639-BC640
BC636
C637
BC638
BC637
BC639
BC635BC636
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Audio and video amplifiers.
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BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC636
BC638
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