BC635
Abstract: BC636 BC636-AP
Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY
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BC636
BC636-AP
BC635
BC635
BC636
BC636-AP
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bc640
Abstract: bc636 bc638
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 1 EMITTER Vdc –45 –60
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
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BC640
Abstract: bc636 Diode bc640 BC636-16 BC636ZL1 BC638 BC638ZL1 BC640-16 BC640ZL1
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC636 BC638 BC640 Collector-Base Voltage VCBO BC636 BC638 BC640 Emitter-Base Voltage
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
BC640
bc636
Diode bc640
BC636-16
BC636ZL1
BC638
BC638ZL1
BC640-16
BC640ZL1
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bc640
Abstract: BC638 BC636
Text: BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage VCEO VCBO Value
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BC636,
BC636-16,
BC638,
BC640,
BC640-16
BC636
BC638
BC640
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24825
Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
24825
BC639
BC635
BC636
BC636-10
BC636-16
BC638
BC638-16
BC640
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transistor BC636
Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter
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BC636
BC636
BC635
transistor BC636
BC635
BC636BU
BC636TA
BC636TAR
BC636TF
BC636TFR
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BC640
Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC640
BC636
BC635
BC636-10
BC636-16
BC638
BC639
SC-43A
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bc640
Abstract: BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC639 BC635 TRANSISTOR E C B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1997 Mar 07 1999 Apr 23 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
bc640
BC635
BC636
BC636-10
BC636-16
BC638
BC638-16
BC639
BC635 TRANSISTOR E C B
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BC640
Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636
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BC636/BC638/BC640
BC636
BC638
BC640
bc636 transistor
bc640 pnp
bc640 transistor
Bc638 transistor PNP
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC635 ECB
Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635 ECB
BC638
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bc638 equivalent
Abstract: bc640 equivalent bc636
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector – Emitter Voltage VCEO –45 –60 –80 Vdc Collector – Base Voltage
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BC636
BC638
BC640
BC636
BC638
226AA)
bc638 equivalent
bc640 equivalent
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bc640
Abstract: Diode bc640 BC636 BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
bc640
Diode bc640
BC636
BC638
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC636
BC638
BC640
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BC638
Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80
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BC636/D
BC636
BC638
BC640
BC636/D*
BC638
bc640
BC636
bc640 pnp
transistors BC 293
bc640 motorola
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bc638 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80
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BC636/D
BC636
BC638
BC640
BC636/D*
bc638 motorola
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bc640
Abstract: st bc638 BC635 application note bc638-10 BC635 BC636 BC636-10 BC637 BC638 BC639
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification
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M3D186
BC636;
BC638;
BC640
BC635,
BC637
BC639.
bc640
st bc638
BC635 application note
bc638-10
BC635
BC636
BC636-10
BC638
BC639
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER M AXIMUM RATINGS Rating Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage VCEO -45 -60 -80 Vdc Collector-Base Voltage VCBO —45 -60 -8 0
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BC636
BC638
BC640
b3b72SS
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BC640
Abstract: BC639-BC640 BC636 C637 BC635 BC638 BC637 BC639 BC635BC636
Text: COMPLEMENTARY SILICON TRANSISTORS BC635, BC637, BC639 NPN and BC636, BC638, BC640 (PNP) are complementary silicon epitaxial planar transistors T0-92 for AF driver stages and amplifier applications up to 1A. BC6351 BC636 45V iC(max) IBC637 BC638 60V 1A 1.5A
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BC635
BC640
BC635,
BC637,
BC639
BC636,
BC638,
BC640
BC636
BC639-BC640
BC636
C637
BC638
BC637
BC639
BC635BC636
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bc640
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC636 BC638 BC640 -6 0 -6 0 Vdc -8 0 Vdc VCEO -4 5 C ollector-B ase Voltage VCBO -4 5
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BC636
BC638
BC640
BC640
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Bc636
Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC640
639 TRANSISTOR PNP
BC638
pnp bc636 transistor
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bc640c
Abstract: BC639 BC638
Text: BC636; BC638; BC640 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 package. amplifiers. N-P-N complements are BC635, BC637 and BC639. Q U IC K R EF E R E N C E D A T A BC636 Collector-base voltage open emitter Collector-emitter voltage (open base)
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BC636;
BC638;
BC640
BC635,
BC637
BC639.
BC636
BC638
BC640
BC636-10
bc640c
BC639
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bc640c
Abstract: No abstract text available
Text: BC636 BC638 BC640 M A X IM U M RATINGS Symbol BC636 BC638 BC640 Unit Collector-Emitter Voltage Rating v CEO -4 5 -6 0 -8 0 Vdc Collector-Base Voltage v CBO -4 5 -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -5 .0 Collector Current — Continuous >C -0 .5 Ade Total Device Dissipation
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BC636
BC638
BC640
BC638
O-226AA)
bc640c
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR "" TECHNICAL DATA BC636 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Bc635 Characteristic Collector-Emitter Voltage atRfiE=lKL! Collector-Emitter Voltage Collector-Emitter Voltage
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BC636
Bc635
-10mA
-150mA
-500mA
-500mA
-50mA
-10mA
50MHz
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