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    BC 201 TRANSISTOR Search Results

    BC 201 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC 201 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 5411

    Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107
    Text: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27


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    PDF BC107/BC108 BC107 BC108 bc 5411 BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107

    4148 zener diode

    Abstract: 4148 zener C106L zener T 4148 bc 107 colpitts oscillator Zener Diode 4148 transistor c-111 colpitts oscillator bc 107 Siemens ofw 5B smd transistor data
    Text: TELEFUNKEN Semiconductors UHF Remote Control System: Receiver Front End and Complete Receiver Design Hints Issue: 09.96 TELEFUNKEN Semiconductors Table of contents 1. Introduction. 1


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    PDF d1-A0-10X 4148 zener diode 4148 zener C106L zener T 4148 bc 107 colpitts oscillator Zener Diode 4148 transistor c-111 colpitts oscillator bc 107 Siemens ofw 5B smd transistor data

    4148 ZENER DIODE

    Abstract: Zener Diode 4148 zener T 4148 C106L 4148 ZENER TRANSISTOR C-111 eurosil transistor SMD 104 bc 107 colpitts oscillator ZENER DIODE 47
    Text: TELEFUNKEN Semiconductors UHF Remote Control System: Receiver Front End and Complete Receiver Design Hints Issue: 10.95 TELEFUNKEN Semiconductors Table of contents 1. Introduction. 1


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    PDF d1-A0-10X 4148 ZENER DIODE Zener Diode 4148 zener T 4148 C106L 4148 ZENER TRANSISTOR C-111 eurosil transistor SMD 104 bc 107 colpitts oscillator ZENER DIODE 47

    bc 103 transistor

    Abstract: transistor BC 176 bc 201 transistor bc 1602 l transistor bc 103 TRANSISTOR BC 203 low noise transistor bc 179 transistor BC 172 transistor bc 102 bc202
    Text: ESC D • ô235bDS 000412b 1 ■ S IE G ; PNP Silicon Transistors 04126 - 25C SIEMENS A K T IE N G E S E LLS C H A F ° BC201 “T * — BC 203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and


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    PDF 0235bQS 000412b -----25C BC201 BC2011' Q62702-C149 Q62702-C167 Q62702-C168 Q62702-C310 Q62702-C170 bc 103 transistor transistor BC 176 bc 201 transistor bc 1602 l transistor bc 103 TRANSISTOR BC 203 low noise transistor bc 179 transistor BC 172 transistor bc 102 bc202

    transistor c203

    Abstract: bc 201 transistor transistor BC 176 bc 1602 l transistor BC 172 TRANSISTOR BC 203 transistor BC201 transistor bc 201 1602 siemens TRANSISTOR BC 173
    Text: »•a i" 2SC D ■ 0235bDS 0 0 0 4 1 2 b PNP Silicon Transistors SIEMENS 1 WÊ S I Z G j - - 25C 04126 D “T * AKTIENGESELLSCHAF BC201 BC203 BC 201, BC 202, and BC 203 are epitaxial PNP silicon planar transistors of miniature design in U 32 plastic package. The types are marked by a green BC 201 , blue (BC 202), and


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    PDF 0235bDS BC201 BC203 Q62702-C149 BC201, 023StiOS BC202 BC201. BC202. transistor c203 bc 201 transistor transistor BC 176 bc 1602 l transistor BC 172 TRANSISTOR BC 203 transistor BC201 transistor bc 201 1602 siemens TRANSISTOR BC 173

    Untitled

    Abstract: No abstract text available
    Text: FT NPN Silicon AF Transistors 35E D • 6 5 3 b 3 5 Q O O lb b S H T - i * ? '1 9 ' BC 846 b M S I P _ - B C 850 SIEMENS/ SPCL-, SEMICONDS • • • • • For AF input stages and driver applications High current gain Low coilector-emitter saturation voltage


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    PDF fl23fc

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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    BC848

    Abstract: BC847
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,


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    PDF BC857, Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 BC848 BC847

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 856 . BC 860 PNP Silicon AF Transistors F eatures • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: B C 846, BC 847,


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    PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 62702-C1698 Q62702-C1507 62702-C1887 62702-C1774

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor

    code 2F 850

    Abstract: BC850
    Text: NPN Silicon AF Transistors • • • • • For AF input stages and d river a pplications High cu rre n t gain Lo w c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 856, BC 857, BC 859, BC 860 PNP


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    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157

    BCX58

    Abstract: C621 c619 bcx 58 k C618 MC908Q1CP Q62701
    Text: IMP N -Transistoren fü r l\IF -V o r- und T reib erstu fen sow ie S chalteran w en dungen BCX 58 BCX 59 BCX 58 und BCX 59 sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnl. S O T -3 0 . DieTransistorensindfürden Einsatz in NF-Vor- und Treiber­


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    PDF OT-30) Q62702- -C618 Q62802- -C619 -C620 -C621 BCX58 C621 c619 bcx 58 k C618 MC908Q1CP Q62701

    BC5471

    Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
    Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N


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    PDF BC1671 BC1681 BC1821 BC2121 BC2371 BC2381 BC2391 BC2571 BC2581 BC2591 BC5471 BC547E BC 548 NPN relay 876 N 2C S BC5461 BC516 548 BC550 bc4151 TLC 5491

    transistor BC 247

    Abstract: BC 247 b transistor
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445


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    PDF NTE74426 14-Lead NTE74LS445 16-Lead NTE74S474, 24-Lead NTE74S475 4096-Bit NTE74HC574, 20-Lead transistor BC 247 BC 247 b transistor

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    2sd823

    Abstract: case outline
    Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage


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    PDF T707b 2SD823 IS-20MA IS-313 IS-313A 2sd823 case outline

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


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    PDF MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813

    b1181

    Abstract: 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D
    Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" NPN 201 oa 00[]4,i3,i T ~ 33- K Epitaxial Planar Silico n Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage


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    PDF 2SD823 7cH707Li QDD4c13ci B1181 B1252 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    PDF 61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung

    transistor eft 323

    Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
    Text: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­


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    transistor BC-108

    Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
    Text: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab


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    PDF 68x200x235 53-cm-G III/18/379 transistor BC-108 dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile


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    PDF BLU56 bbS3T31 002AA53 MCB030 MC8027