F5 marking code
Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month
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OD-323
LLP75-3A,
LLP75-3B
OD-523
DO-219AB)
OT-23
OD-123
06-May-04
F5 marking code
MARKING CODE f5
marking code vishay label
SMF DO-219AB
Vishay diodes code marking
Vishay DaTE CODE
DO-219AB
marking L4 SOD123
SOD-523 DO-219AB
SOD-80 sod123
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connector 26 pin
Abstract: BAV 1G 8 bit data encoder 05N70 BAV 62
Text: Absolute single-turn shaft encoder BAV parallel features • absolute single-turn encoder up to 12 bit • fast, parallel interface • servo flange • Gray code general data mechanical data voltage supply 5 VDC ± 5% 05N 10 - 30 VDC (24K) max. revolutions
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26-pin
connector 26 pin
BAV 1G
8 bit data encoder
05N70
BAV 62
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-143
2907A PNP bipolar transistors
diode S6 78A
MMIC SOT 363
s1140
DIODE TA 70/04
2907A PNP bipolar transistors datasheet
Diode BAW 62
TRANSISTOR BC 158
baw 92
68W SOT
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Untitled
Abstract: No abstract text available
Text: SK25DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JY; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +' =[ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +
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SK25DGDL12T4
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1N47A
Abstract: TFK 1n4148 1n4148 D035 tfk bav 21 1N4148 tfk 1N52B TFK Label telefunken telefunken sod57 Vishay Telefunken tfk
Text: VISHAY ▼ Vishay Telefunken Marking on Packages view from top view from too Cathoderirjg D035 Type: 1N4148 D035 Type: BZX55C. view from top □ BAV Q view from top :~ r I 1N5 i t t \ -f unwina TFK X 1N5 BAV 221 21 B D035 Type: BAV 17 - BAV 21 42 unwjnd D035
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1N4148
BZX55C.
BZX85C.
1N4678
1N4717
BZT03C220
BZW03C27
1N47A
TFK 1n4148
1n4148 D035
tfk bav 21
1N4148 tfk
1N52B
TFK Label
telefunken
telefunken sod57
Vishay Telefunken tfk
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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Diode BAY 46
Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j
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1N456
BAW21A
1N456
BAX12
CB-102)
CB-104)
Diode BAY 46
Diode BAY 45
Diode BAY 21
Diode BAY 80
Diode BAY 19
BAY 73 diode
Diode BAY 41
Diode BAY 72
Diode BAY 42
bav 21 diode
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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Diode BAY 46
Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j
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1N456
BAW21A
CB-26)
CB-127
Tamb100Â
Tamb125Â
Tamb60Â
CB-127
CB-127.
Diode BAY 46
1N 4000 diode
1N3069
BA224-220
BAV45
BAY41
Diode BAY 41
Diode BAY 80
BAX12
SFD49
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6RC60
Abstract: No abstract text available
Text: 1 2 X 2 -Í ap *£ se SH 08 m OS u ig p il ^ w A *O V 0=J-noA M * A A ma P 0 = 1110A yu i M lLnocl 9 1+ fit Jf3 M » 1 "f 8 ‘S M BP *1 “ " a a “H PO /ZH O 0 I H A S V « ‘Ö* 0 I =°H • LnoN M I =inod O H I > «o w o li 1HU <.», OE *0 % ee ZS
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10kfi,
6RC60
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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W23C8192
Abstract: No abstract text available
Text: fcüö 4» « * W23C8192 Winbond 1024K X 8 CMOS MASK ROM GENERAL DESCRIPTION FEATURES The W23C8192 is a high speed, • Low power consumption: low power mask-programmable read-only memory organ Active: 150mW typ. ized as 1048576 X 8 bits and operates on a
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W23C8192
150mW
1024K
W23C8192
759291C
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W22C
Abstract: W22C4096 262144X16
Text: AUó I« tan W22C4096 Winbond 2 5 6 K X 1 6 BITS/512KX8 BITS CMOS MASK ROM GENERAL DESCRIPTION FEATURES Active: lOOmW typ. The W22C4096 is a high speed, low power mask-programmable read-only memory organ Standby: 25^W(typ.) ized as 262144X16 bits or 524288 X 8 bits
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W22C4096
BITS/512KX8
W22C4096
262144X16
B-1930
W22C
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Untitled
Abstract: No abstract text available
Text: HD440072-Sync Signal Generator for TV Cameras NTSC, PAL/SECAM Functions • Four tim es chrom a su b -c a rrie r o scillato r frequency • (B-Y) and (R-Y) chroma sub-carrier output circuit • Active filter genlock phase detector • Horizontal programmable logic array
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HD440072--------------------Sync
HD440072
fH/282
fH/282
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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diode marking w8
Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast
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BAW63
BZX84
FMMD3102
BZX84-C3V0
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
ZC830
BZX84-C4V3
ZC830A
diode marking w8
diode a7
Diode Marking z3 SOT-23
DIODE marking W4 38
Diode BAW 62
marking A7 diode
baw 92
BAW 62 SOT23
diode marking e8
diode marking a4
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Z8060-FIFO
Abstract: Z8060DC rfdi
Text: FIFO Z8060 Z8060 FIFO Buffer Unit and FIFO Expander DISTINCTIVE CHARACTERISTICS • • • • • Bidirectional, asynchronous data transfer capability Large 128-bit-by-8-bit buffer memory Two-wire, interlocked handshake protocol 3-state data outputs Wire-ORing of empty and full outputs for sensing of
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Z8060
Z8060
128-bit-by-8-bit
Z8060*
02128B
Z8060-FIFO
Z8060DC
rfdi
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I22y
Abstract: AFMU LA7545 CDA4.5ME
Text: Ordering num ber:EN 2739 Monolithic Linear 1C No.2739 LA 754 5 / VTR/TV IF Signal Processor VIF + SIF The LA7545 is an IC that contains the V IF section and S IF section in a 16-pin D IP. The small-sized package makes it possible to make LA7545-applied sets compact.
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LA7545
16-pin
LA7545-applied
I22y
AFMU
CDA4.5ME
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Untitled
Abstract: No abstract text available
Text: Tem ic U6809B S e m i c o n ü u c t o r s Fail-Safe IC Description The U6809B is designed to support the fail-safe function of a safety-critical system e.g., ABS. It includes a relay driver, two independent short-circuit-protected lamp drivers which are supplied by redundant ground lines, two
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U6809B
U6809B
250-mA
D-74025
20-Apr-99
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UTM ceramic RESISTOR
Abstract: LA7645 la7645-appiied 400H J300 LA7545 200kf
Text: F SAiYO i L A 7545 No.2739 Monolithic Linear ÍC VTR/TV IF Signal Processor VIF + SIF The LA7545 is an 1C th a t contains the VIF section and SIF section in a package m akes it possible to m ake LA7545-appIied sets compact. / / D |p |T h e w iaU -aii^d
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LA7545
16-pin
LA7645-appIied
Ta-25Â
UTM ceramic RESISTOR
LA7645
400H
J300
200kf
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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