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    BAV 21 DIODE Search Results

    BAV 21 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BAV 21 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bav 27 v

    Abstract: No abstract text available
    Text: BAV 18 … BAV 21 Silicon-Planar-Diodes Silizium-Planar-Dioden Nominal current Nennstrom 250 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…200 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca. Dimensions / Maße in mm


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    PDF DO-35 OD-27 200/C 100/C bav 27 v

    F5 marking code

    Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
    Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month


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    PDF OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 F5 marking code MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123

    1N47A

    Abstract: 1N52B
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


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    PDF 1N4148 BZX55C. BZX85C. BZT03C220 BZW03C27 DO214AC 1N47A 1N52B

    1N4148 DO35

    Abstract: 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


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    PDF 1N4148 BZX55C. BZX85C. BZT03C220 BZW03C27 DO214AC 1N4148 DO35 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80

    Vishay diodes code marking

    Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
    Text: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year


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    PDF OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 DO-35 Vishay diodes code marking marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23

    DIODE BZG 03c

    Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
    Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.


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    PDF 1N4148 BZX55C. BZX85C. OT143 OT143R OT323 OT343 OT343R OT363 DIODE BZG 03c DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


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    PDF OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327

    mkp1830

    Abstract: BZX55 Vishay baw 92 MKP1841 MKP1840 MKT1826 MBR40H100CT BZX55 C24 SS14 melf BZT52-V
    Text: COMPUTING, DIGITAL IMAGING, AND OFFICE AUTOMATION A pplic ation S olutions COMPUTERS AND PERIPHERALS V I S H AY I N T E R T E C H N O L O G Y, I N C . MARKET SOLUTIONS w w w. v i s h a y. c o m SEMICONDUCTORS RECTIFIERS Schottky single, dual Standard, Fast, and Ultra-Fast Recovery


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    PDF VSA-PL0023-0508 mkp1830 BZX55 Vishay baw 92 MKP1841 MKP1840 MKT1826 MBR40H100CT BZX55 C24 SS14 melf BZT52-V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BAV21 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast switching diode B C DIM MILLIMETERS A MAX 3.9 B MIN 27.5 MAX 1.9 C MAX 0.52 D A B MAXIMUM RATING Ta=25 CHARACTERISTIC D VRRM 250 V VR


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    PDF BAV21 DO-35 100mA 200mA

    Untitled

    Abstract: No abstract text available
    Text: DCS/PCN-1035 DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: April 15, 2004 Alert Category: July 15, 2004 R2 Alert Type: Discrete Semiconductor PCN #: Change Notice PCN #:2004-1035 TITLE Conversion to Lead Free Terminal Plating Mini Melf, DO-35 and DO-41 Axials


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    PDF DCS/PCN-1035 DO-35 DO-41 QP502-1 QP502-1

    SBMT2222A

    Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
    Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)


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    PDF 100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A

    Diode BAV 19

    Abstract: No abstract text available
    Text: BAV 18.BA V 21 Si-Allzweck-Dioden Small Signal Si-Diodes 200 mA Nominal current Nennstrom 50.200 V Repetitive peak reverse voltage Periodische Spitzensperrspannung ecu ar ffÛX. 01.9 5£ 'f; nax. Svo - h“ 0.56 £ftJ Dimensions / Maße in mm DO-35 Glass case


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    PDF DO-35 R0D1RS14 000017S Diode BAV 19

    bav 21 diode

    Abstract: bav 17 diode Diode BAY 21 BAV20 BAV21 Diode BAY 19 BAV17 diode bav Diode BAV 19
    Text: » W BAV17 tis BAV 21 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendung: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm • l0» KATHO DE CATHODE yx 01,9 » 0 ,5 5 Normgehäuse Case 54 A 2 DIN 4 1 880 JEDEC DO 35


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    PDF BAV17 bav 21 diode bav 17 diode Diode BAY 21 BAV20 BAV21 Diode BAY 19 diode bav Diode BAV 19

    BAV20V

    Abstract: bav21 BAY19
    Text: BAV19 . BAV21, BAV19W . BAV21W S ilicon E p ita x ia l P l a n a r D iodes for general purpose. T he diodes BAV19 . BAV21 are also available in M iniM E L F case w ith the type designations BAV100 . BAV103. -Cathode Mark Packages - D O -35 BAV19 . BAV21


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    PDF BAV19 BAV21, BAV19W BAV21W BAV21 BAV100 BAV103. BAV21) BAV20V BAY19

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


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    PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode

    Diode BAY 46

    Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j


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    PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49

    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


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    PDF 1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a

    DIODE A6

    Abstract: Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE
    Text: SPRflGUE DIODES « DIODES » DIODES « DIODES ♦ DIODES THE MARK OF RELIABILITY SERIES BAV and BAW MICROMINIATURE DIODES • • Series BAS, BAV, and BAW consists of standard European single and dual diode types. Devices are molded in a T 0 -2 6 3 A A high-profile or T O -2 3 6 AB (low-profile) package. These


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    PDF T0-263AA orTO-236AB S0T23 BZX84C24 BZX84C27 BZX84C30 BZX84C33 BZX84C4V7 BZX84C4V7R DIODE A6 Y6 ZENER DIODE BZXB4C10 sprague catalog BZX marking diode ZENER diode Y8 Y4 ZENER DIODE diode ZENER A8 diode ZENER Y6 marking A6 ZENER DIODE

    sy 170

    Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
    Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170


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    PDF N4001. sy 170 SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    BAV70

    Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
    Text: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99


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    PDF OT-23 100fl, BAV70 BAV74 BAV99 BAW56 100mA tempe10 BZX84-C11 BZX84-C12 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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