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    BAE SYSTEMS Search Results

    BAE SYSTEMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-VHDCIMX200-003 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-003 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male 3m Datasheet
    CS-VHDCIMX200-000.5 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-000.5 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male .5m Datasheet
    CS-VHDCIMX200-005 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-005 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male 5m Datasheet
    CS-VHDCIMX200-006 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-006 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male 6m Datasheet
    CS-VHDCIMX200-001 Amphenol Cables on Demand Amphenol CS-VHDCIMX200-001 VHDCI SCSI (SCSI-5) LVD/SE Cable - .8mm 68-pin VHDCI SCSI Male to Male 1m Datasheet

    BAE SYSTEMS Datasheets Context Search

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    tms320tci6488 evm

    Abstract: CW247 Chip28 TCI6488 CW241 Rake search accelerator Antenna log periodical TCI antenna tms320tci6488 C64X
    Text: Application Report SPRAB58—July 2009 TCI648x Antenna Interface Programming Communication Infrastructure Brighton Feng, Jane Lu, Albert Bae Abstract The TMS320TCI648x antenna interface AIF is a peripheral module that supports transfers of baseband antenna IQ data between uplink and downlink baseband DSP


    Original     		PDF SPRAB58--July TCI648x TMS320TCI648x TCI6488 tms320tci6488 evm CW247 Chip28 CW241 Rake search accelerator Antenna log periodical TCI antenna tms320tci6488 C64X

    rad750 user manual bae

    Abstract: bae rad750 RAD750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087
    Text: RAD750• Board Hardware Specification Document Number 234A524 Release Date August 1, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document Number: 234A524 RAD750 CompactPCI Hardware Specification Notices Before using this information and the product it supports, be sure to read the general information on the


    Original     		PDF RAD750 234A524 RAD750 rad750 user manual bae bae rad750 RAD750 processor 234A524 RAD750 3U single board computer IEC-1076-4-101 RAD750 software reference manual wedgelock mil-b-5087

    DMC20481NY-LY-BAE-BKN

    Abstract: DMC20481 DMC-20481NY-LY-BAE-BKN DMC20481NY-LY LED ly series KS0063B NTD-7141 DMC20481NY-LY-bae
    Text: First Edition Sep 6, 2005 LCD Module Technical Specification Final Revision * Type No. DMC20481NY-LY-BAE-BKN Approved by Quality Assurance Division ) Checked by (ACI Engineering Division) ) T.Yuchi Prepared by (ACI Engineering Division) Table of Contents


    Original     		PDF DMC20481NY-LY-BAE-BKN DMC20481NY-LY-BAE-BKN DMC20481 DMC-20481NY-LY-BAE-BKN DMC20481NY-LY LED ly series KS0063B NTD-7141 DMC20481NY-LY-bae

    bae rad750

    Abstract: RAD750 rad750 user manual bae RAD750 processor A22 CGA board ae09 cga 624 hs01 SECDED mcc w04
    Text: HS-01 12/2000 Version: 1.1 Technical Data 1 Power PCI PowerPC/PCI/Memory Controller Hardware Specifications The Power PCI chip developed by BAE SYSTEMS provides a radiation hardened PowerPC microprocessor common hardware reference platform CHRP compliant bridge between the PowerPC


    Original     		PDF HS-01 RAD750 bae rad750 rad750 user manual bae RAD750 processor A22 CGA board ae09 cga 624 hs01 SECDED mcc w04

    RRS01

    Abstract: vibrating sensor alarm SiRRS01 RRS01-01 RRS01-05 BAE Systems RRS0 VIBRATION SENSOR mtbf SHOCK SENSOR JAPAN
    Text: SiRRS01 Angular Rate Sensor The SiRRS01 angular rate sensor has evolved from the highly successful Vibrating Structure Gyroscope developed by BAE SYSTEMS, which has been in service since 1990. This MEMS implementation of our VSG technology, offers continued advancement in miniaturisation and reliability.


    Original     		PDF SiRRS01 35gram 300ms 000hrs RRS01 vibrating sensor alarm RRS01-01 RRS01-05 BAE Systems RRS0 VIBRATION SENSOR mtbf SHOCK SENSOR JAPAN

    nas620

    Abstract: RAD750 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark
    Text: RAD750 Board Hardware User's Manual Document Number 234A533 Release Date December 20, 2000 Copyright by BAE SYSTEMS All Rights Reserved Document #: 234A533 RAD750 3U CompactPCI Hardware Users Manual Notices Before using this information and the product it supports, be sure to read the general information on the


    Original     		PDF RAD750TM 234A533 RAD750 RAD750 nas620 Uralane 5753 Uralane 5750 RAD750 processor RAD6000 bae rad750 rad750 user manual bae RAD750 software reference manual Calmark

    RAD750

    Abstract: RAD6000 bae rad750 RAD750TM sabritec BAE Systems MIL-STD-1553B serial 422 1553 SUmmit mtbf dual transceiver RAD750 board software
    Text: RAD6000 Single Board Space Computer in CompactPCI Form Factor BAE SYSTEMS announces a RAD6000 based 6U CompactPCI standard single board computer, available in two configurations. The CompactPCI board employs the RAD6000, the 25 MIPS radiation hardened version of the RS/6000, the predecessor to


    Original     		PDF RAD6000 RAD6000 RAD6000, RS/6000, MIL-STD-1553B RS-422 -30oC AS9000, 1-800-RAD750s rad750 bae rad750 RAD750TM sabritec BAE Systems MIL-STD-1553B serial 422 1553 SUmmit mtbf dual transceiver RAD750 board software

    Untitled

    Abstract: No abstract text available
    Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Single Emitter Diode Lasers 200 m, 808 nm, 8 W JDL-BAE-200-808-TM-8-4.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers


    Original     		PDF JDL-BAE-200-808-TM-8-4

    Untitled

    Abstract: No abstract text available
    Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS 'HFG/NVDQ2HMFKD$LHSSDQ#HNCD+@RDQR …L ML 6 JDL-BAE-090-940-TE-12-4.0 Features: Applications: m High laser power m /TLOHMFNERNKHC RS@SDK@RDQR@MCÆADQK@RDQR


    Original     		PDF JDL-BAE-090-940-TE-12-4 JDL-BAE-090-940-TE-812-4

    251A172

    Abstract: 250A783 4927N 251A172-417 F1192M-95 1RU44 512KX32 251A137 270 uf 375v T1A 250v
    Text: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20188 A D A T E Refer to Document Change History Herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.


    Original     		PDF EOA20188 512Kx32, 1RU44 251A172 512Kx32 A0-A18 DQ0-DQ31 250A783 4927N 251A172-417 F1192M-95 251A137 270 uf 375v T1A 250v

    251A137

    Abstract: 512KX40 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137
    Text: REVISIONS R E L or E C O D E S C R I P T I O N REV ECO EOA20156 G D A T E Refer to Document Change History herein 01-19-04 A P P R O V E D K. Mason NOTES: 1. This is a TOP LEVEL DRAWING TLD . 2. BAE SYSTEMS - Manassas, VA reference only. 3. All sheets are the same revision status.


    Original     		PDF EOA20156 512Kx40, 1RU44 251A137 512Kx40 A0-A18 DQ0-DQ39 251A137-517 4927N w26m 251a137-527 251A137-101-PS001 EOA20156 BAE 0002 BAE Systems 251A137

    bga PCB footprint

    Abstract: No abstract text available
    Text: BALL GRID ARRAYS For 0,8mm Grid Male Pin Adapters & Female Socket Series 5XX • BGA adapter/socket systems are a reliable way to make BGAs pluggable, they may also be used as a high density board-to-board interconnect. • The BGA device is soldered to a 9929


    Original     		PDF 599-XX-XXX-04-001429 599-XX-XXX-04-001442 bga PCB footprint

    BAE Systems

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
    Text: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 209A542 1x106 1x1014 1x109 1x10-11 40-Lead AS9000, BAE Systems AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML

    197A807

    Abstract: BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 5 V 197A807 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 197A807 2x105 1x1012 5962R96891 28-Lead 28C256 AT28C256. AS9000, 197A807 BAE Systems prom 32K x 8 fuse smd code N WY smd transistor BAE Systems b050 TRANSISTOR PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd atmel AT28C256 rad smd transistor a4

    203A665

    Abstract: J122 SMD TRANSISTOR 314 j122
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 1x106 1x1014 1x109 1x10-11 1x1012 5962H98615 40-Lead AS9000, 203A665 J122 SMD TRANSISTOR 314 j122

    Untitled

    Abstract: No abstract text available
    Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 203A665 5962H98615 40-Lead 1x106 1x1014 1x109 1x10-11 1x1012 AS9000, x5040)

    L7582AAE

    Abstract: L8581 L7581AAE L7541 L7581AC 24-Pin Plastic DIP L7581 L7582 L7583 SOG PACKAGE
    Text: Product Brief June 2000 L7581/2/3 and L8581 Ringing, Tip/Ring, and Line Card Access Switches Features • Small size/surface-mount packaging ■ Monolithic IC reliability ■ Low impulse noise ■ Make-before-break, break-before-make operation ■ Clean, bounce-free switching


    Original     		PDF L7581/2/3 L8581 PB00-074ALC PN98-107ALC, PN98-108ALC, PN99-008ALC) L7582AAE L8581 L7581AAE L7541 L7581AC 24-Pin Plastic DIP L7581 L7582 L7583 SOG PACKAGE

    S4 46

    Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 225A833 1x106 1x1014 1x109 1x10-11 64-Lead AS9000, S4 46 AEFJANTXV1N4100-1-BAE/TR/BAE 225A833

    A1760

    Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 238A792 64-Lead 1x106 1x1014 1x109 1x10-11 AS9000, A1760 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE

    prom 238A790

    Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
    Text: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)


    Original     		PDF 238A790 2x105 1x1012 28-Lead 28C256 AT28C256. AS9000, prom 238A790 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite BAE Systems

    prom 238A790

    Abstract: AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE
    Text: 238A790 32K x 8 Read Only Memory PROM – 3.3V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches) • Latchup Free


    Original     		PDF 238A790 28-Lead 2x105 1x1012 28C256 AT28C256. AS9000, x5040) prom 238A790 AT28C256 rad WY smd transistor 238A790 BAE Systems prom 32K x 8 VT101 Atmel PART DATE CODE K109 AEFJANTXV1N4100-1-BAE/TR/BAE

    SEN-4995

    Abstract: No abstract text available
    Text: SENSITRON_ SEMICONDUCTOR SEN-4995 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-4995, REV. ENG. A HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052


    OCR Scan     		PDF SEN-4995, SEN-4995 S-100 MIL-STD-750, SHD116244AS, MIL-STD-750 SEN-4995

    SEN-5050

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SEN-5050 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-5050, REV. ENG. B HERMETIC POWER MOSFET N-CHANNEL - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052 DESCRIPTION: A 100 VOLT, 0.035 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.


    OCR Scan     		PDF SEN-5050, SEN-5050 S-100 MIL-STD-750, O-254 --SHD225512, MIL-STD-750 SEN-5050

    TB 2929 H

    Abstract: i486sx 82424TX LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135
    Text: INTEGRATED DE VI CE baE • 4 3 5 5 77 1 D O m S b n 128KB/256KB/512KB SECONDARY CACHE MODULES FOR THE INTEL* i486 CPU/82420TX PCI SET Sib ■ PRELIMINARY IDT7MP6133 Id™ ! « ¡SESSIS IDT7MP6153 FEATURES DESCRIPTION • 128KB/256KB/512KB secondary cache m odule family


    OCR Scan     		PDF IDT7MP6133 128KB/256KB/512KB i486TM CPU/82420TX 82420TX 33MHz 128MB CELP2X56SC3Z48 82424TX TB 2929 H i486sx LT3112 i486sx intel idt 256kb cache intel 486 dx 33mhz P6135