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    TE Connectivity XFDBA-57-14-K-A499

    XFDBA 57-14 K-A499
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    TE Connectivity FDBA-57-8-3A-SN-K-A838

    FDBA 57-8-3A-SN-K-A838
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    TE Connectivity FDBA-57-20-16-SN-K-A499

    FDBA 57-20-16 SN-K-A499
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    TE Connectivity FDBA-57-18-32-SN-K-A499

    FDBA 57-18-32 SN-K-A499
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    TE Connectivity FDBA-57-20-41-PN-K-A5610

    FDBA 57-20-41 PN-K-A5610
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    BA57 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA579 L-Com ADAPTOR SMA M/TNC M Original PDF
    BA579A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA579A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA579A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BA579C Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA579C Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA579C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BA579CK Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA579CK Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA579S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA579S Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA579S Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    BA57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5

    555H

    Abstract: SST34HF3244
    Text: 32 Mbit Concurrent SuperFlash + 4/8 Mbit PSRAM ComboMemory SST34HF3244 / SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM x16 MCP ComboMemory Data Sheet FEATURES: • Flash Organization: 2M x16 or 4M x8 • Dual-Bank Architecture for Concurrent


    Original     		PDF SST34HF3244 SST34HF3282 SST34HF3284 SST34HF32x4x32Mb SST34HF32x4: 24Mbit SST34HF3282: MO-210, 62-lfbga-LS-8x10-400mic-4 62-ball 555H

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    ba60

    Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
    Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, ba60 TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5

    TH50VSF3581AASB

    Abstract: A12F TH50VSF3580AASB
    Text: TH50VSF3580/3581AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3580/3581AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


    Original     		PDF TH50VSF3580/3581AASB TH50VSF3580/3581AASB 608-bit 432-bit 69-pin 3/3581AASB XXXh/60h) BPA/60h) TH50VSF3581AASB A12F TH50VSF3580AASB

    TFBGA56

    Abstract: No abstract text available
    Text: TC58FVT321/B321FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT 4M x 8 BITS / 2M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT321/B321FT/XB-70 32-MBIT TC58FVT321/B321 432-bit, TFBGA56

    SST36VF3203

    Abstract: 555H BKX555H SST36VF3204 ba4932
    Text: 32 Mbit x8/x16 Concurrent SuperFlash SST36VF3203 / SST36VF3204 SST36VF3201C / 1602C32Mb (x8/x16) Concurrent SuperFlash Advance Information FEATURES: • Organized as 2M x16 or 4M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Bottom Sector Protection


    Original     		PDF x8/x16) SST36VF3203 SST36VF3204 SST36VF3201C 1602C32Mb SST36VF3203: SST36VF3204: S71270-01-000 555H BKX555H SST36VF3204 ba4932

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    K8P3215UQB

    Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
    Text: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P3215UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P3215UQB K8P2815 K8p3215 K8P3215U k8p2815u K8P32 samsung nor flash Samsung MCP K8P6415

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    k 1358

    Abstract: 56FBGA
    Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations


    Original     		PDF SST34WA32A3 SST34WA32A4 SST34WA3283 SST34WA3284 SST34WA32x3 SST34WA32x4 MO-225, 56-fbga-MVN-6x8-1 56-Ball S71358-01-000 k 1358 56FBGA

    c5578

    Abstract: No abstract text available
    Text: 1234 1 4 !"4#$4%5 &"BD7B5D59EDF567897AC5E'7E87A5 585 5!* E8E59BB8 1AF(8D7E'5$6BD5 A8D' 1 4 !"4#$4%5 &D7B5E85"BD7B


    Original     		PDF 12345678957A8BCDE8BF5F7 FB57A5 D59EDF5 97AC5E 87AC5, 5EAF53DD5 97AC5' BDE87AC5DEACB5 c5578