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    BA1 46 Search Results

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    BA1 46 Price and Stock

    3M Interconnect M3BBA-1460K

    IDC CABLE - MSR14A/MC14F/MSR14A
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    DigiKey M3BBA-1460K Bulk 1
    • 1 $15.53
    • 10 $11.942
    • 100 $9.3232
    • 1000 $7.43483
    • 10000 $7.43483
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    Micron Technology Inc MT28FW02GBBA1HPC-0AAT TR

    NOR Flash PARALLEL NOR SLC 128MX16 LBGA DDP
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    Mouser Electronics MT28FW02GBBA1HPC-0AAT TR 702
    • 1 $41.2
    • 10 $38.21
    • 100 $31.48
    • 1000 $29.11
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    Integrated Silicon Solution Inc IS46TR16128D-125KBLA1

    DRAM Automotive (Tc: -40 to +95C), 2G, 15V, DDR3, 128Mx16, 1600MT/s a. 11-11-11, 96 ball BGA (9mm x13mm) RoHS
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    Mouser Electronics IS46TR16128D-125KBLA1 190
    • 1 $6.7
    • 10 $6.11
    • 100 $5.14
    • 1000 $5.05
    • 10000 $4.93
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    Micron Technology Inc MTC16C2085S1SC48BA1

    Memory Modules DDR5 32GB SODIMM VFBGA Y32A
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    Mouser Electronics MTC16C2085S1SC48BA1 149
    • 1 $241.14
    • 10 $212.06
    • 100 $205.65
    • 1000 $205.65
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    Integrated Silicon Solution Inc IS46TR16256B-125KBLA1

    DRAM Automotive (Tc: -40 to +95C), 4G, 15V, DDR3, 256Mx16, 1600MT/s a. 11-11-11, 96 ball BGA (9mm x13mm) RoHS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IS46TR16256B-125KBLA1 148
    • 1 $10.35
    • 10 $9.59
    • 100 $8.21
    • 1000 $7.71
    • 10000 $7.71
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    BA1 46 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics


    Original     		PDF M52S32162A M52S32162A 16Bit

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC100 Unbuffered SO-DIMM 256MB With 16Mx8 CL2 TS32MSS64V8D2 Description Pin Identification Symbol The TS32MSS64V8D2 is a 32M bit x 64 Synchronous Function A0~A11 Address inputs TS32MSS64V8D2 consists of 16 pieces of CMOS BA0, BA1 Banks Select 4Mx8bitsx4banks Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF 144PIN PC100 256MB 16Mx8 TS32MSS64V8D2 TS32MSS64V8D2 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The


    Original     		PDF 144PIN PC133 256MB TS32MSS64V6L TS32MSS64V6L 144-pin JEP-108E 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: AS4C64M16MD1 1 Gb 64M x 16 bit 1.8v High Performance Mobile DDR SDRAM Confidential Advanced (Rev. 1.0, Mar. /2014) Features Description 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3


    Original     		PDF AS4C64M16MD1 cycles/64ms 25ns/ Mar/2014

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The


    Original     		PDF 144PIN PC133 256MB TS32MSS64V6L TS32MSS64V6L 144-pin JEP-108E 100MHZ

    MT48LC16M16A2 rev B

    Abstract: mclf MPC8XX MT48LC8M16A2 MT48LC MPC8xx pin MT48LC8M16A2TG-75 mpc860 users manual "mpc860 users manual" *48lc16m16a2
    Text: TN-48-12 Interfacing with Motorola’s MPC8XX TECHNICAL NOTE INTERFACING SDRAM DEVICES WITH MOTOROLA’S MPC8XX The addressing for the MCP8xx uses A0 as the Most Significant Bit MSB , while the MSB for the SDRAM are the bank address lines BA1 and BA0 followed by A11.


    Original     		PDF TN-48-12 32-bit 16-bit MT48LC8M16A2 MPC860 TN4812 MT48LC16M16A2 rev B mclf MPC8XX MT48LC MPC8xx pin MT48LC8M16A2TG-75 mpc860 users manual "mpc860 users manual" *48lc16m16a2

    54PIN

    Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
    Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.


    Original     		PDF M12L32162A 16Bit M12L32162A 54PIN M12L32162A-7BG M12L32162A-7TG

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16M X 16 CL3 TS16MMS64V6G Description Pin Identification The TS16MMS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MMS64V6G Symbol Function A0~A12 Address inputs BA0~BA1 Select Bank


    Original     		PDF 144PIN PC133 128MB TS16MMS64V6G TS16MMS64V6G 144-pin JEP-108E

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX8 CL3 TS32MSS64V6D Pin Identification Description The TS32MSS64V6D is a 32M bit x 64 Synchronous Dynamic RAM high-density memory module. The Symbol Function A0~A11 Address inputs BA0,BA1 Banks Select packages, a 2048 bits serial EEPROM and 1 piece of


    Original     		PDF 144PIN PC133 256MB 16MX8 TS32MSS64V6D TS32MSS64V6D 144-pin JEP-108E

    M52S32162A

    Abstract: No abstract text available
    Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.2 (Apr. 27, 2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA) - Modify DC Characteristics


    Original     		PDF M52S32162A 16Bit M52S32162A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.


    Original     		PDF M12L32162A M12L32162A 16Bit

    M52D32162A

    Abstract: No abstract text available
    Text: ESMT M52D32162A Revision History : Revision 1.0 Aug.16, 2006 - Original Revision 1.1 (Aug. 31,2006) -Modify VDD; VDDQ; tSAC; ICC1; ICC2PS; ICC6 spec Revision 1.2 (Apr. 24,2007) - Delete BGA ball name of packing dimensions Revision 1.3 (Apr. 27,2007) - Rename BGA pin name (BA1 to NC ; BA0 to BA)


    Original     		PDF M52D32162A 16Bit M52D32162A

    Untitled

    Abstract: No abstract text available
    Text: HYMD2326468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance


    Original     		PDF HYMD2326468-K/H/L 32Mx64

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16M X 8 CL3 TS32MSS64V6L Pin Identification Description The TS32MSS64V6L is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. Symbol The Function A0~A11 Address inputs BA0, BA1 Select Bank serial EEPROM on a 144-pin printed circuit board. The


    Original     		PDF 144PIN PC133 256MB TS32MSS64V6L TS32MSS64V6L 144-pin JEP-108E 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type K4S281632D-TL1L Model AVIC-ZH8017ZT VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address


    Original     		PDF 128Mbit K4S281632D-TL1L AVIC-ZH8017ZT A0-A11 DQ0-DQ15 A10/AP

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type VDD K4S281632C-TL1L AVIC-H09 Model 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address


    Original     		PDF 128Mbit K4S281632C-TL1L AVIC-H09 A0-A11 DQ0-DQ15 A10/AP

    Untitled

    Abstract: No abstract text available
    Text: HYMD116645A8-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A11, BA0, BA1 CIN1 58 72 58 72 pF Input Capacitance RAS, CAS, WE CIN2 58 72 58 72 pF Input Capacitance CKE0 CIN3 43 57 58 72 pF Input Capacitance


    Original     		PDF HYMD116645A8-K/H/L 16Mx64

    Untitled

    Abstract: No abstract text available
    Text: HYMD2646468-K/H/L Revision History 1. Rev. 0.2 From Parameter Pin To Symbol Unit Min Max Min Max Input Capacitance A0 ~ A12, BA0, BA1 CIN1 93 107 90 104 pF Input Capacitance RAS, CAS, WE CIN2 93 107 90 104 pF Input Capacitance CKE0, CKE1 CIN3 63 77 58 72 pF


    Original     		PDF HYMD2646468-K/H/L 64Mx64

    DPDD192MX8XSBY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1


    Original     		PDF DPDD192MX8XSBY5 A10/AP 30A254-03 DPDD192MX8XSBY5

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function SDRAM CMOS Type J 1/1 E GEX-FM903XM/UC K4S640832E-TL1H Model VDD 1 54 VSS DQ0 2 53 DQ7 VDDQ 3 52 VSSQ NC 4 DQ1 5 VSSQ 6 NC 7 DQ2 8 VDDQ 9 NC 10 DQ3 11 VSSQ 12 NC 13 51 NC A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ7 : Data input/output


    Original     		PDF GEX-FM903XM/UC K4S640832E-TL1H A0-A11 A10/AP

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function 128Mbit SDRAM CMOS Type M2V2840ATP-7L AVIC-H09 Model VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output


    Original     		PDF 128Mbit M2V2840ATP-7L AVIC-H09 A0-A11 DQ0-DQ15 A10/AP

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM PIN CONFIGURATION Top view VDD DQ0 VDDQ N.C DQ1 VSSQ N.C DQ2 VDDQ N.C DQ3 VSSQ N.C VDD N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47


    Original     		PDF K4S280832B A10/AP 54Pin 400mil 875mil) A10/AP K4S280832B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ELECTRIC 64MSDRAM Pin Configuration x4 x8 xl6 \ Vdd 54 Vss o DQO DQO 2 53 DQ15 i n NC NC DQO NC NC NC DQ1 NC NC VddQ NC DQ1 DQ1 DQ2 VssQ NC DQ3 DQ2 DQ4 VddQ NC DQ5 DQ3 DQ6 VssQ NC DQ7 Vdd NC DQML /WE /CAS /RAS /CS BA0 A13 BA1(A12) AIO A0 Al A2


    OCR Scan     		PDF L-21029-01 64MSDRAM 54Pin 400mil

    Untitled

    Abstract: No abstract text available
    Text: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &


    OCR Scan     		PDF iii25