175C
Abstract: 54ABT16500 54ABT16500W-QML BA date sheet b.a part 1 date sheet
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/16/95 Last Update Date: 07/08/97 Last Major Revision Date: 04/18/97 MN54ABT16500-X REV 0B0 16-BIT TRANSCEIVER WITH 3-STATE OUTPUTS General Description These 18-bit universal bus transceivers combine D-type latches and D-type flip-flops to
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MN54ABT16500-X
16-BIT
18-bit
WA48ARB
M0001551
175C
54ABT16500
54ABT16500W-QML
BA date sheet
b.a part 1 date sheet
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175C
Abstract: 54ABT543 54ABT543E-QML 54ABT543J-QML 54ABT543W-QML 5962-9231401Q3A ABT543
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 04/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/95 MN54ABT543-X REV 0B0 OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS General Description The ABT543 octal transceiver contains two sets of D-type latches for temporary storage of
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MN54ABT543-X
ABT543
54ABT543
54ABT543E-QML
54ABT543J-QML
54ABT543W-QML
NB543
MIL-STD-883,
E28ARD
175C
54ABT543
54ABT543E-QML
54ABT543J-QML
54ABT543W-QML
5962-9231401Q3A
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D49 transistor
Abstract: ba 6490 inphi zq transistor 1024M EBJ82HF4B1RA
Text: DATA SHEET 8GB Registered DDR3 SDRAM DIMM EBJ82HF4B1RA 1024M words x 72 bits, 4 Ranks Specifications Features • Density: 8GB • Organization 1024M words × 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR3 SDRAM with DDP (FBGA) DDP: 2 pieces of 1G bits chips sealed in one
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EBJ82HF4B1RA
1024M
240-pin
1066Mbps/800Mbps
M01E0706
E1306E30
D49 transistor
ba 6490
inphi
zq transistor
EBJ82HF4B1RA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 8GB Registered DDR3 SDRAM DIMM EBJ82HF4B1RA 1024M words x 72 bits, 4 Ranks Specifications Features • Density: 8GB • Organization 1024M words × 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR3 SDRAM with DDP (FBGA)
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EBJ82HF4B1RA
1024M
240-pin
1066Mbps/800Mbps
M01E0706
E1306E20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 8GB Registered DDR3 SDRAM DIMM EBJ82HF4B1RA 1024M words x 72 bits, 4 Ranks Specifications Features • Density: 8GB • Organization 1024M words × 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR3 SDRAM with DDP (FBGA)
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EBJ82HF4B1RA
1024M
240-pin
1066Mbps/800Mbps
M01E0706
E1306E10
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SSTE32882
Abstract: edj1116 DDR3 DIMM elpida inphi DDR3 DIMM 240 clock layout ddr3 4gb ddp EBJ41HF4B1QA-DJ-E
Text: DATA SHEET 4GB VLP Registered DDR3 SDRAM DIMM EBJ41HF4B1QA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 18 pieces of 2G bits DDR3 SDRAM with DDP (FBGA) DDP: 2 pieces of 1G bits chips sealed in one
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EBJ41HF4B1QA
240-pin
1333Mbps/1066Mbps
M01E0706
E1265E40
SSTE32882
edj1116
DDR3 DIMM elpida
inphi
DDR3 DIMM 240 clock layout
ddr3 4gb ddp
EBJ41HF4B1QA-DJ-E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42RE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ42RE8BAFA
240-pin
1066Mbps/800Mbps
M01E0706
E1307E20
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EBJ42HE8BAFA
Abstract: inphi E1412E20 inphi 1320 E1412e
Text: DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42HE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ42HE8BAFA
240-pin
1066Mbps/800Mbps
M01E0706
E1412E20
EBJ42HE8BAFA
inphi
E1412E20
inphi 1320
E1412e
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ41HE4BAFA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ41HE4BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1256E30
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inphi 1340
Abstract: DDR3 DIMM 240 pin names DDR3-1333 SSTE32882 ebj41he4b ddr3 240 VDDSPD 1.5 E1256E40
Text: DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ41HE4BAFA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ41HE4BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1256E40
inphi 1340
DDR3 DIMM 240 pin names
DDR3-1333
SSTE32882
ebj41he4b
ddr3 240 VDDSPD 1.5
E1256E40
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EBJ42RE8BAFA
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ42RE8BAFA 512M words x 72 bits, 4 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ42RE8BAFA
240-pin
1066Mbps/800Mbps
M01E0706
E1307E10
EBJ42RE8BAFA
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175C
Abstract: 54ABT652 54ABT652E-QML 54ABT652J-QML 54ABT652W-QML
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/01/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT652-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT652 consists of bus tranceiver circuits with D-type flip-flops, and control
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MN54ABT652-X
ABT652
54ABT652
54ABT652E-QML
54ABT652J-QML
54ABT652W-QML
E28ARD
J24FRG
W24CRE
175C
54ABT652
54ABT652E-QML
54ABT652J-QML
54ABT652W-QML
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ41RE4BAFA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ41RE4BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1250E20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Registered DDR3 SDRAM DIMM EBJ41HE4BAFA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ41HE4BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1256E20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ21EE8BAFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization 256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ21EE8BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1235E30
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175C
Abstract: 54ABT646 54ABT646E-QML 54ABT646J-QML 54ABT646W-QML 5962-9457701Q3A MN54ABT646-X
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 08/25/95 Last Update Date: 10/05/98 Last Major Revision Date: 03/19/97 MN54ABT646-X REV 0B0 OCTAL TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT646 consists of bus tranceiver circuits wit TRI-STATE, D-type flip-flops, and
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MN54ABT646-X
ABT646
E28ARD
J24FRG
W24CRE
M0002947
175C
54ABT646
54ABT646E-QML
54ABT646J-QML
54ABT646W-QML
5962-9457701Q3A
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E1248
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ21EE8BAWA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization 256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ21EE8BAWA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1367E20
E1248
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175C
Abstract: 54ABT16646 54ABT16646W-QML 5962-9450202QXA
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 02/19/97 Last Update Date: 07/08/97 Last Major Revision Date: 06/09/97 MN54ABT16646-X REV 0A0 16 Bit TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS General Description The ABT16646 consists of bus tranceiver circuits with TRI-STATE, D-type flip-flops, and
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MN54ABT16646-X
ABT16646
E28ARD
J24FRG
W24CRE
M0001543
175C
54ABT16646
54ABT16646W-QML
5962-9450202QXA
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edj1116
Abstract: EDJ1108 E1248E DDR3-800
Text: DATA SHEET 2GB Unbuffered DDR3 SDRAM DIMM EBJ21EE8BAWA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization 256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ21EE8BAWA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1367E30
edj1116
EDJ1108
E1248E
DDR3-800
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bc 4510 be
Abstract: E1253E40 DDR3 DIMM 240 pin names SSTE32882 DSAE00843
Text: DATA SHEET 2GB Registered DDR3 SDRAM DIMM EBJ20RE4BAFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization 256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory
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EBJ20RE4BAFA
240-pin
1333Mbps/1066Mbps/800Mbps
M01E0706
E1253E40
bc 4510 be
E1253E40
DDR3 DIMM 240 pin names
SSTE32882
DSAE00843
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DDR3 pcb layout raw card f so-dimm
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2GB DDR3 SDRAM SO-DIMM EBJ21UE8BAU0 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization 256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in
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EBJ21UE8BAU0
204-pin
EBJ21UE8BAU0-xx-E)
EBJ21UE8BAU0-xx-F)
1333Mbps/1066Mbps/800Mbps
M01E0706
E1244E30
DDR3 pcb layout raw card f so-dimm
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Framatome Connectors
Abstract: C01-8639-0000 Framatome
Text: GENERAL CHARACTERISTICS : SEE DRAWING C01-8639-0000 M li Core range DA7W25A00 33.2O; PART NUMBER M u p d a te 2 8 /1 0 /0 3 Lastest modification bu i BA RT.5 Designed bij: JARRY d a t e 2 6 / 0 1 / 9 5 Tgpe of d r a w i n g : Checked b y :FONTENEAU date: Released bLj:
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OCR Scan
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C01-8639-0000
DA7W25A00
date26/01/95
C01-8639-0572-1
M94D001
Framatome Connectors
C01-8639-0000
Framatome
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Untitled
Abstract: No abstract text available
Text: R E V IS IO N S PART NUMBER CODING "" t SWR25X-NRTC-S_ _-R_-BA REV. ECO . NO D E S C R IP T IO N DATE BY A 2237 IN IT IA L R E LE A S E 0 5 /2 3 /2 0 1 1 LH . TERMINATION TYPE A= RIGHT ANGLE BENT, TYPE2 B= RIGHT ANGLE BENT, TYPE 1 NUMBER OF POSITIONS CONTACTS PER ROW
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OCR Scan
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PDF
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SWR25X-NRTC-S_
5M-2009
WST\11634,
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Untitled
Abstract: No abstract text available
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 04/25/95 Last Update Date: 03/31/97 Last Major Revision Date: 03/19/95 MN54ABT543-X REV OAO OCTAL REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS General Description The ABT543 octal transceiver contains two sets of D-type latches for temporary storage of
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OCR Scan
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PDF
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MN54ABT543-X
ABT543
54ABT543
54ABT543E-QML
54ABT543J-QML
54ABT543W-QML
NB543
00066A
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