DD13337
Abstract: No abstract text available
Text: 5ÖE D • b 7 5 4 2 4 0 G G 1 3 3 3 b BbO « O K I J O K I S E M I C O N D U C T O R GROUP O K I semiconductor MSM27C256HZB -r-^/s-as" 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.
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MSM27C256HZB
768-Word
MSM27C256HZB
MSM27G256HZB
28-pin
32-lead
MAX525
MAX184
DD13337
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Untitled
Abstract: No abstract text available
Text: O K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX DODbST? T-S2 -13.-0 °I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays w ith up to 8 grids w ith 35 anodes dots plus 5 annunciators. The
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24E40
MSC7125-XX
MSC7125-XX
16-bit
T--52--13-09
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18-PIN
Abstract: 26-PIN ZIP20-P-400 MSM OKI
Text: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
b724S40
L724240
18-PIN
26-PIN
ZIP20-P-400
MSM OKI
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Untitled
Abstract: No abstract text available
Text: K I SEMICONDUCTOR GROUP S3E D • b?24E40 O K I semiconductor MSC7125-XX OODbST? T-SZ-13>-0°I 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-XX is a BiCMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-XX drives displays with up to 8 grids with 35 anodes dots plus 5 annunciators. The
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24E40
MSC7125-XX
MSC7125-XX
16-bit
b724240
T-52-13-09
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.
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MSM514280
144-Word
18-Bit
MSM514280/SL
18-bit
cycles/128ms
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5141OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.
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MSM5141OOB/BL
304-Word
MSM514100B/BL
cycles/16ms,
cycles/128ms
MSM514100B/BL
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MAX184
Abstract: MAX525 MSM27C256HZB
Text: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.
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242M0
001333b
MSM27C256HZB
768-Word
MSM27C256HZB
28-pin
32-tead
MAX184
MAX525
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DIN 32 676
Abstract: No abstract text available
Text: 4bE D • b 7 2 M 2 4 Q D D 1 G D 2 M 154 H O K I J O K I S E M I C O N D U C T O R GR OU P O K I semiconductor 7 MSM28C64A_ T - y ^ / i 8K x 8 BIT CM O S ELECTRICALLY ERASABLE & PROGRAMABLE ROM GENERAL DESCRIPTION The MSM28C64ARS is a CMOS electrically erasable and program m able read only m emory
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MSM28C64A
MSM28C64ARS
312ps/byte.
b72424Q
MSM28C64A
T-46-13-27
b7E4S40
DIN 32 676
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TSCC 1100
Abstract: SI03
Text: 5ôE D • b 7 2 4 2 4 D □ 0 1 3 4 7 b =12a « O K I J O K I O K I s e m i c o n d S E M I C O N D U C T O R GR OU P u c t o r - r ^ - ¿ 3 - 1 ? M S M 5 1 4 2 5 2 262,144-Word x 4-Bit MULTIPORT DYNAMIC RAM <Fast Page Mode» <Fast Page Mode> DESCRIPTION
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b75424o
001347b
MSM514252
144-Word
MSM514252
TSCC 1100
SI03
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65P524
Abstract: SFT 352 0040H MSM65524 MSM65P524 TI OAE
Text: S fiE D • b 7 2 4 2 4 U □ □ 1 3 Ì B 7 Û4 3 I ■ O K I J O K I semiconductor MSM65524/65P524 0 K 1 SEMICONDUCTOR OKI'S ORIGINAL nX HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER G EN ER A L DESCRIPTION MSM65524 is a high-perform ance 8-bit single-chip controller th at employs Oki's original nX-8/50
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b72424D
13TB7
MSM65524/65P524
MSM65524
nX-8/50
10MHz
MSM65P524,
E424D
65P524
SFT 352
0040H
MSM65P524
TI OAE
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cles/64
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6724
Abstract: B754 87424
Text: O K I SEMI CONDUCTOR GROUP ö l D E § t>7242MD ; ,6 7 2 4 2 4 0 O K I SEMICONDUCTOR GROUP . 89D 0 2 7 3 4 D 7 L ¥ £ '2 3 '/7 l l l k l s e m i c o n d u MSC2310YS9/KS9 c t o 0DDB73M r _ _ 1,048,576 BY 9 BIT DYNAMIC RAM MODULE
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7242MD
0DDB73M
MSC2310YS9/KS9_
MSC2310YS9/KS9
MSM411000JS)
MSM411000JS;
6724
B754
87424
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DG240-2
Abstract: NCMOS MSM6577 MSM6577-XX
Text: O K I Semiconductor MSM6577-XX_ Operatable at 0.9V and Built-in LCD Driver 4-Bit Microcontroller G EN ER A L D ESCRIPTIO N The MSM6577 is a 4-bit microcontroller that is fabricated in OKI's low-voltage CMOS technology, enabling operation at 0.9 V. This device incorporates LCD drivers, 8-bit synchronous serial ports,
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MSM6577-XX_
MSM6577
MSM6577-XX
DG240-2
NCMOS
MSM6577-XX
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diode 6b3
Abstract: No abstract text available
Text: O K I electronic components QL392N-03, QL3492N-03 1.3 |im Low-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL392N-03 and OL3492N-Ü3 are 1.3 |iin, MQW InGaAsP/InP laser-diode coaxial modules with single-mode fiber pigtails. These modules are optimal light sources for optical subscriber loops and
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QL392N-03,
QL3492N-03
OL392N-03
OL3492N-Ã
OL391N-03,
OL3492N-Q3
OL392N-03
L72M2MG
OL391N-Q3,
diode 6b3
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