MPQ2369
Abstract: DDT323S DDT32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Sw itching Transistor MPQ2369 NPN Silicon M otorola Preferred D evice fui ftp Hai Rii Eoi m TI L r\ i NPN [y\J r v i r v i LU LaJ LaJ U l l l j li l i l C A S E 646-06, S T Y L E 1 TO-116 MAXIM UM RATING S Rating
|
OCR Scan
|
PDF
|
MPQ2369
O-116
0CH3237
MPQ2369
DDT323S
DDT32
|
schottky DIODE MOTOROLA B12
Abstract: MBRS120T3 403A-01 LA 7555
Text: MOTOROLA SC M O D E S / O P T O 5SE D Order this data sheet by MBRS120T3/D b 3 b 7555 D0fll2TG T MOTOROLA T-23-o S • S E M IC O N D U C T O R ■ ■ ■ TECHNICAL DATA M B R S1 2 0 T 3 M B R S1 3 0 T 3 M B R S1 4 0 T 3 Surface Mount Schottky Power Rectifiers
|
OCR Scan
|
PDF
|
MBRS120T3/D
T-23-o
BRS120T3
MBRS130T3
MBRS140T3
schottky DIODE MOTOROLA B12
MBRS120T3
403A-01
LA 7555
|
murs105t3.u1a
Abstract: diode U1J MURS150T3 MURS105T3 TE 255 motorola motorola diode u1G motorola opto motorola u1j MURS110T3 MURS115T3
Text: MOTOROLA SC DIODES/OPTO 5SE D fcj3b7255 0001320 4 Order this data sheet by MURS105T3/D T-2ÏÔ5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and
|
OCR Scan
|
PDF
|
fcj3b7255
MURS105T3/D
MURS105T3
248S6
murs105t3.u1a
diode U1J
MURS150T3
TE 255 motorola
motorola diode u1G
motorola opto
motorola u1j
MURS110T3
MURS115T3
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MMBT2484LT1 colle3ctor M AXIMUM RATINGS Rating Symbol Value Collector- Emitter Voltage v CEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc v EBO 6.0 Vdc 'c 50 mAdc Symbol Max Unit Pd 225 mW
|
OCR Scan
|
PDF
|
MMBT2484LT1
-236A
b3b7255
|
SM 74hc04
Abstract: 74ls04 connection circuits 74hc04 SM+74hc04
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC3105LT1 Advance Information Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX" and “TQ” Series Telecom Relays Rated up to 300 mW at 3 V to 5 V •
|
OCR Scan
|
PDF
|
MDC3105LT1
SM 74hc04
74ls04 connection circuits
74hc04
SM+74hc04
|
MC14075B
Abstract: No abstract text available
Text: MOTOROLA SC {LOGIC} Tfl 6367252 MOTOROLA S C L O G IC DeT| b3t.725a □ D 7 cì42cì 98D 79429 D M O T O R O LA MC14001B Q uad 2-Input N O R G ate MC14002B B -S U F F IX S E R IE S CMOS G A T E S Dual 4-Input Nor G ate T h e B S e rie s log ic gates are c o n stru c te d w ith P and N ch a n n el en
|
OCR Scan
|
PDF
|
MC14001B
MC14002B
MC14011B
MC14012B
MC14075B
|
1615CT
Abstract: 1610CT MUR1650CT MURI660CT MUR1660 221A-06 MUR1605CT MUR1610CT MUR1620CT MUR1630CT
Text: MOTOROLA SC DIODES/O PTO b4E D b3b?2SS DGÖb4Tl MUR1605CT MUR1610CT MUR1615CT MUR1620CT MOTOROLA SEMICONDUCTOR TECHNICAL DATA H Ö3 • ¡H0T7 MUR1630CT MUR1640CT MUR1650CT MUR1660CT MUR1620CT, MUR1640CT and MUR1660CT •r* Motorola Prafarrad Davteaa ULTRAFAST
|
OCR Scan
|
PDF
|
MUR1605CT
MUR1630CT
MUR1610CT
MUR1640CT
MUR1615CT
MUR1650CT
MUR1620CT
MUR1660CT
MUR1620CT,
1615CT
1610CT
MURI660CT
MUR1660
221A-06
|
BT3946D
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The M B T3904D W 1T 1, M B T3906D W 1T 1, and M BT3946D W 1T1 de vice s are spin-offs of our popular S O T -2 3 /S O T -3 2 3 three-le ade d devices. T hey are designed for general purpose am plifier applications and are housed in the S O T -363 six-leaded
|
OCR Scan
|
PDF
|
T3904D
T3906D
BT3946D
T3946D
MBT3904DW
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistors MRW2001 MRW2003 Designed primarily for large-signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers
|
OCR Scan
|
PDF
|
MRW2001
MRW2003
MRW2001
b3b7555
MRW2003
b3b72S5
|
MPS8599
Abstract: MPS8098
Text: M O TO RO LA " b3 b7255 SEMICONDUCTOR TECHNICAL DATA 0 m 3 3 fl3 fc,S2 Am plifier Transistors NPN MPS8098 M PS8099* PNP MPS8598 MPS8599* PNP NPN EMITTER EMITTER MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-Base Voltage E m itter-B ase Voltage
|
OCR Scan
|
PDF
|
b7255
MPS8098
PS8099*
MPS8598
MPS8599*
MPS859B
MPS8099
MPS8599
MPS8099
MPS8599
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRB20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Power MBRB20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This sta te -o f-the -a rt device is designed for use in high frequency switching power
|
OCR Scan
|
PDF
|
MBRB20200CT/D
MBRB20200CT
b3b7555
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Sw itching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.
|
OCR Scan
|
PDF
|
SC-59
M1MA151KT1
M1MA152KT1
M1MA151/2KT1
Inch/3000
M1MA151/2KT3
inch/10
b3b7555
|
Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
|
OCR Scan
|
PDF
|
1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT3640LT1 PNP Silicon Motorola Preferred Device M AXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage VCEO -1 2 Vdc C ollector-B ase Voltage VCBO -1 2 Vdc E m itte r- Base Voltage
|
OCR Scan
|
PDF
|
MMBT3640
OT-23
O-236AB)
BT3640LT1
b3b7255
|
|
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO b 3b ? 5 5 S 0 0 0 1 3 m 25E D 1 Order this data sheet by P6SMB6.8/D MOTOROLA SEM IC O N D U C T O R mmm T -il' TECHNICAL DATA P6SIVIB6.8,A Zen er O v e rv o lta g e T ran sie n t S u p p r e s s o rs thru P6SM B200,A The P6SMB6.8 series is designed to protect voltage sensitive components from high
|
OCR Scan
|
PDF
|
|
zener b14a
Abstract: No abstract text available
Text: MO T O R O L A SC DIODES/OPTO 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA O rd er th is d ata sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener Overvoltage Transient Suppressors thru 1SMB170, A . . . this device is designed specifically for transient voltage suppression. The wide leads
|
OCR Scan
|
PDF
|
b3L7555
1SMB170,
zener b14a
|
zener 2a7
Abstract: p6smb110 9AL zener diode P6SMB6.8A P6SMB10 P6SMB10A P6SMB11 P6SMB11A P6SMB12 P6SMB12A
Text: MOTOROLA SC DIOtES/OPTO b3b?55S 0001341 1 25E t O rd er th is d a ta sh eet b y P 6S M B 6.8 /D MOTOROLA SEMICONDUCTOR T-il-ti TECHNICAL DATA P6SMB6.8,A Zener Overvoltage Transient Su p p re sso rs thru P6SMB200,A The P6SMB6.8 series is designed to protect voltage sensitive com ponents from high
|
OCR Scan
|
PDF
|
00013m
241SI
zener 2a7
p6smb110
9AL zener diode
P6SMB6.8A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
|
U10120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MUR10120E/D SEMICONDUCTOR TECHNICAL DATA SCANSWITCH Power Rectifier M UR10120E For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and
|
OCR Scan
|
PDF
|
MUR10120E/D
UR10120E
MUR10120E
MJH16206
MJF16206
L3b72SS
U10120
|
MR1376
Abstract: No abstract text available
Text: MO TO RO LA SC D IO DE S / O P T O b4E D • b 3 b 7 SS S 0Dflb22fci flflT * 1 1 0 1 7 1N3889 thru 1N3893 MR1376 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3891 and MR1376 are Motorola Preferred Devices l)a (a Sheol STUD M O UNTED FAST REC O V ER Y POWER R EC TIFIE R S
|
OCR Scan
|
PDF
|
0Dflb22fci
1N3889
1N3893
MR1376
1N3891
MR1376
|
1N5628
Abstract: 12115X marking AB SOD123 1N5828
Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
|
OCR Scan
|
PDF
|
1N5826
1N5827
1N5828
1N582S
1N5828
DO-35
1N5628
12115X
marking AB SOD123
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n T im in g D io d e MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
|
OCR Scan
|
PDF
|
MMBV105GLT1/D
MMBV105GLT1
OT-23
b3b7555
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
|
OCR Scan
|
PDF
|
MUN5111DW1T1
MUN5111DW1T1
OT-363
b3b7255
MUN5115DW1T1
QCH3522
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRB3030CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBRB3030CT Using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: • • •
|
OCR Scan
|
PDF
|
MBRB3030CT/D
MBRB3030CT
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hex D Master/Slave Flip-Flop MC10176 The MC10176 contains six high-speed, master slave type “D” flip-flops. Clocking is common to all six flip-flops. Data is entered into the master when the clock is low. Master to slave data transfer takes place on the positive-going
|
OCR Scan
|
PDF
|
MC10176
MC10176
50-ohm
DL122
|