Untitled
Abstract: No abstract text available
Text: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
PDF
|
TSM70N600
ITO-220
O-251
O-252
TSM70N600CI
50pcs
TSM70N600CH
75pcs
|
Untitled
Abstract: No abstract text available
Text: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology
|
Original
|
PDF
|
TSM70N900
ITO-220
O-251
O-252
TSM70N900CI
50pcs
TSM70N900CH
75pcs
|
N-Channel
Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
Text: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)
|
Original
|
PDF
|
TSM6N60
O-251
O-252
75pcs
TSM6N60CH
TSM6N60CP
N-Channel
marking b14 diode
B14 DIODE
DIODE B14
|
Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
|
Original
|
PDF
|
1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
|
Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
|
Original
|
PDF
|
RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
|
Untitled
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
PDF
|
TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
|
Untitled
Abstract: No abstract text available
Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP10U60S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408043
|
Schottky
Abstract: sot-23 MARKING CODE ZA smd code marking za
Text: RB706F-40 Low VF SMD Schottky Barrier Diode Small Signal SOT-323 Features ◇ Low reverse current, high reliability ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant
|
Original
|
PDF
|
RB706F-40
OT-323
OT-323
MIL-STD-202,
C/10s
Schottky
sot-23 MARKING CODE ZA
smd code marking za
|
Untitled
Abstract: No abstract text available
Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP10U45S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408042
|
Untitled
Abstract: No abstract text available
Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP20U60S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408047
|
Untitled
Abstract: No abstract text available
Text: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP15U50S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408046
|
Untitled
Abstract: No abstract text available
Text: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSPB10U45S
J-STD-020
2011/65/EU
2002/96/EC
D1407011
|
Untitled
Abstract: No abstract text available
Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSPB15U50S
J-STD-020
2011/65/EU
2002/96/EC
D1407012
|
Untitled
Abstract: No abstract text available
Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
PDF
|
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1403011
|
|
|
sot-23 Marking 2F
Abstract: No abstract text available
Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant
|
Original
|
PDF
|
MMBT2907A
350mW,
OT-23
MIL-STD-202,
C/10s
sot-23 Marking 2F
|
Untitled
Abstract: No abstract text available
Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSN520M60
J-STD-020
2011/65/EU
2002/96/EC
D1408069
|
Untitled
Abstract: No abstract text available
Text: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP12U120S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408044
|
Untitled
Abstract: No abstract text available
Text: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP15U100S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408045
|
Untitled
Abstract: No abstract text available
Text: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
|
Original
|
PDF
|
J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1404004
|
Untitled
Abstract: No abstract text available
Text: MBRF3045CT-Y thru MBRF30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
PDF
|
MBRF3045CT-Y
MBRF30150CT-Y
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1405039
|
Untitled
Abstract: No abstract text available
Text: MBR3045CT-Y thru MBR30150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
|
Original
|
PDF
|
MBR3045CT-Y
MBR30150CT-Y
2011/65/EU
2002/96/EC
O-220AB
JESD22-B102
D1405038
|
Untitled
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability
|
Original
|
PDF
|
TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
|
marking b14 diode
Abstract: No abstract text available
Text: TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability
|
Original
|
PDF
|
TSSA3U45
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
JESD22-B102
D1401011
marking b14 diode
|
10U100
Abstract: TSP10U120S
Text: TSP10U100S thru TSP10U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement
|
Original
|
PDF
|
TSP10U100S
TSP10U120S
J-STD-020
2011/65/EU
2002/96/EC
O-277A
D1408038
10U100
TSP10U120S
|
