B 828 TRANSISTOR Search Results

B 828 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

B 828 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier	Original	64-byte	PDF
3654A Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0 Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier	Original	64-byte 128-byte 3654A at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0	PDF
828BD Abstract: BD NPN transistors BD 826 NPN Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60	OCR Scan	00142bQ 828BD BD NPN transistors BD 826 NPN	PDF
SF 829 B Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)	OCR Scan	SF827 SF829 SF82B SF82S SF 829 B SF819 sf 829 d SF126 SF826 sf829c SF816 SF 827 d	PDF
Untitled Abstract: No abstract text available Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter	OCR Scan	BF840 BF841	PDF
BF840 Abstract: BF841 transistors marking ND transistors C 828 Text: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40	OCR Scan	BF840 BF841 33c14 BF840 BF841 transistors marking ND transistors C 828	PDF
.W07B Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012 Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s	OCR Scan	2SB828/2SD1064 0V/12A 2SB828 2SD1064 .W07B W07b 722G 2SB82B as1012	PDF
transistors BC 543 Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825 Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,	OCR Scan	Q62702-D1303 Q62702-D13Q4 Q62702-D1179 Q62702-D1257 Q62702-D1307 Q62702-D1308 Q62702-D61 Q62702-D1312 Q62702-D1313 Q62702-D1238 transistors BC 543 BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825	PDF
C 828 Transistor Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power	OCR Scan	CJD44H11 CJD45H11 CJD44H11, CP219 26-September C 828 Transistor B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor	PDF
Untitled Abstract: No abstract text available Text: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:	OCR Scan		PDF
C 828 Transistor Abstract: marking code 20A iC 828 Transistor LB1200 Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for	OCR Scan	CZT5338 OT-223 CP219 26-September OT-223 C 828 Transistor marking code 20A iC 828 Transistor LB1200	PDF
Untitled Abstract: No abstract text available Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220	OCR Scan	MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005	PDF
2SD1741 Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604 Text: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity	OCR Scan	2SD1741, 2SD1741A 2SD1741 2SD1741A 3Efl52 2SB1171 2SB1171A ic 4604 tc 4604	PDF
C 828 Transistor Abstract: No abstract text available Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP	OCR Scan	Emitter-Ba01 C 828 Transistor	PDF

SOT23 marking 828 Abstract: 46 marking Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3	OCR Scan	Q62702-C1493 Q62702-C1475 OT-23 BCV26 BCV46 SOT23 marking 828 46 marking	PDF
bd 825 10 Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113 Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,	OCR Scan	Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113	PDF
3N171 Abstract: VN10MA C 828 Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device	OCR Scan	3N170/3N171 3N171 VN10MA C 828	PDF
Siren Sound Generator circuit diagram Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound Text: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed	OCR Scan	UM3561A UM3561A 200Ko 240Kn 2SC9013or8050 2SC9013or8050 1780u UM3561 Siren Sound Generator circuit diagram internal circuit of UM3561 siren police diagram circuit diagram of police siren 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound	PDF
PSA44 Abstract: PSA-45 B 828 transistor PSA45 Text: Philips Semiconductors Product specification NPN high-voltage transistors MPSA44; MPSA45 FEATURES PINNING • Low current max. 300 mA PIN • High voltage (max. 400 V). 1 collector 2 base 3 em itter APPLICATIONS DESCRIPTION • Telecom m unication applications.	OCR Scan	MPSA44; MPSA45 PSA44 PSA45 PSA45 er750 PSA-45 B 828 transistor	PDF
Untitled Abstract: No abstract text available Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode (trr: 200ns). The mounting base of the	OCR Scan	QCA100BA60 E76102 200ns)	PDF
GY 123 Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127 Text: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122	OCR Scan	GAZ14 GY 123 SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127	PDF
dta144es Abstract: DTA144EU Text: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch	OCR Scan	DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV DTA144ES DTA144EU dta144es DTA144EU	PDF
3N170 Abstract: 3N170-71 3N171 X3N170-71 Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device	OCR Scan	3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71	PDF
TIP42 philips Abstract: T1P42B Text: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier	OCR Scan	TIP42 TIP42B GGM3S34 TIP41 TIP42jA T1P42B 711002b 0043S40 X--33--21 TIP42 philips	PDF

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B 828 TRANSISTOR Search Results

B 828 TRANSISTOR Result Highlights (5)

B 828 TRANSISTOR Datasheets Context Search

Untitled

3654A

828BD

SF 829 B

Untitled

BF840

.W07B

transistors BC 543

C 828 Transistor

Untitled

C 828 Transistor

Untitled

2SD1741

C 828 Transistor

SOT23 marking 828

bd 825 10

3N171

Siren Sound Generator circuit diagram

PSA44

Untitled

GY 123

dta144es

3N170

TIP42 philips