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    B 102G Search Results

    B 102G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD70F3102GJ-33-8EU Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD70F3102GJ-33-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), , / Visit Renesas Electronics Corporation
    UPD70F3102GJ-33-8EU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    54102-G05-05 Amphenol Communications Solutions 54102-G05-05-B/S 0.100\\ HDR TH DR30AU Visit Amphenol Communications Solutions
    58102-G61-07LF Amphenol Communications Solutions Minitek® 2.00mm, Board/Wire to Board Connector, Unshrouded Right Angle Header, Through Hole, Double Row, 14 Positions, 2.00mm (0.079in) Pitch. Visit Amphenol Communications Solutions
    SF Impression Pixel

    B 102G Price and Stock

    Diodes Incorporated PI3USB102GZLEX

    IC USB 2.0 SWITCH 2:1 10TQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PI3USB102GZLEX Reel 7,000 3,500
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    • 10000 $0.26443
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    Newark PI3USB102GZLEX Cut Tape 23 1
    • 1 $0.707
    • 10 $0.587
    • 100 $0.444
    • 1000 $0.302
    • 10000 $0.302
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    Avnet Asia PI3USB102GZLEX 8 Weeks 3,500
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    • 10000 $0.19307
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    Avnet Silica PI3USB102GZLEX 10 Weeks 3,500
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    Kyocera AVX Components 100B102GTN50XT1K

    CAP CER 1000PF 50V P90 1111
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    DigiKey 100B102GTN50XT1K Cut Tape 2,005 1
    • 1 $21.41
    • 10 $15.689
    • 100 $12.635
    • 1000 $11.39098
    • 10000 $11.39098
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    100B102GTN50XT1K Digi-Reel 2,005 1
    • 1 $21.41
    • 10 $15.689
    • 100 $12.635
    • 1000 $11.39098
    • 10000 $11.39098
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    100B102GTN50XT1K Reel 2,000 1,000
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    • 1000 $11.00142
    • 10000 $11.00142
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    Comchip Technology Corporation Ltd DB102-G

    BRIDGE RECT 1PHASE 100V 1A DB
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    DigiKey DB102-G Box 451 1
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.28156
    • 10000 $0.28156
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    Karl Kruse GmbH & Co KG DB102-G 17,100
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    NAC DB102-G Tube 17,100 1
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    Chip 1 Exchange DB102-G 17,100
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    GeneSic Semiconductor Inc DB102G

    BRIDGE RECT 1PHASE 100V 1A DB
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    DigiKey DB102G Bulk 20,000
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    Newark DB102G Bulk 20,000
    • 1 $0.251
    • 10 $0.251
    • 100 $0.251
    • 1000 $0.251
    • 10000 $0.251
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    NAC DB102G 2,500
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    Comchip Technology Corporation Ltd CEFB102-G

    DIODE GEN PURP 100V 1A DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CEFB102-G Reel 3,000
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    B 102G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XVB93PHPN

    Abstract: diode V105 XVB93 AC10V AC50V DC100V V105-4PVN D98SG
    Text: Miniature Potentiometers SPECIFICATIONS VO9LPVN M1.7x0.35 2.8 IN DEPTH 2.2 4.5 0.8 1.8 4.35 5 4.35 ø 3. 2-ø1.0 HOLE 230 ± 5° Rotational Torque 1-10mN • m {10-102gf · cm} Resistance Range 1kΩ - 500kΩ taper B 5kΩ - 250kΩ (other taper) 0.05W (taper B)


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    1-10mN 10-102gf AC10V, DC10V V105-4PVN 2-15mN 20-153gf DC12V XVB93M1N XVB93PHPN diode V105 XVB93 AC10V AC50V DC100V V105-4PVN D98SG PDF

    Zeropower

    Abstract: k3305 b 102g
    Text: NTC Thermistors サーミスタ CT Thermistors 高耐熱アキシャルサーミスタ ▲ Dimensions φ0.5 Nickel plated CP leads Glass φ1.8 28±1 28±1 4max. (mm) ▲ ▲ Ratings 種類 Type R25許容差 Tolerance of R25 B許容差 Tolerance of B CT - 4


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    1020s 252CT 204CT R2525 562CT R25Rated 562CT. 70min. 35max. Zeropower k3305 b 102g PDF

    HER 300 diode

    Abstract: 101G 103G 105G 106G HER101G HER108G her105g diode
    Text: HER101G HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    HER101G HER108G DO-41, MIL-STD-202, DO-41 HER 300 diode 101G 103G 105G 106G HER101G HER108G her105g diode PDF

    b 103g

    Abstract: a 103g b 104g A 102G st65w423 101G 103G 105G 106G HER101G
    Text: HER101G thru HER107G High Efficiency Rectifier Glass Passivation Junction REVERSE VOLTAGE 50-1000 VOLTS FORWARD CURRENT 1.0 AMPERE P b Lead Pb -Free Features: *Low forward voltage drop *High current capability *High reliability *High surge current capability


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    HER101G HER107G DO-41 MIL-STD-202, 34grams DO-41 11-Sep-09 b 103g a 103g b 104g A 102G st65w423 101G 103G 105G 106G PDF

    Untitled

    Abstract: No abstract text available
    Text: HER101G HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    HER101G HER108G DO-41, MIL-STD-202, DO-41 PDF

    pt2302

    Abstract: No abstract text available
    Text: 8_ 7_ 6_ V1-1 I NOTF: T H IS H FV IC F IS RO H R C O M P IIA N T . 4 SYM A A EL JL M IJ lN/ TL J v ^ •n -o - b B i -H - O- -BH-L-B- B b -B- -B- ORDER INFORMATION: PHa001-PtXX02Gf PH: PIN HEADER a: 2.54mmX2.54mm PITCH


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    PHa001-PtXX02Gf 54mmX2 /MAY/06* UNBROKPt3802Gf PHaOOl-Pt3902Gf PHaOOl-Pt4002Gf 19/FEB/03â pt2302 PDF

    A 102G

    Abstract: Western Electric 102g tube vacuum tube amplifier 100L 102D Western Electric Scans-0017250 vacuum tube applications data A 102G resistance
    Text: Western Electric 102G Vacuum Tube A Classification—Filamentary, voltage amplifier triode T h e 1 0 2 G t u b e is s i m i l a r t o th e 1 0 2 D t u b e e x c e p t t h a t sp e c ia l p r e c a u t i o n s h a v e been t a k e n in the 1 0 2 G t o m i n im i z e i n s u l a t io n l e a k s a n d s p u t t e r n oise in th e tu b e .


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    PDF

    101G

    Abstract: 103G 105G 106G DBL101G DBL107G
    Text: s TAIWAN SEMICONDUCTOR D B L101G -D B L 107G Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers Pb RoHS DBL C O M P LIA N C E Features ❖ -i- •y* ■O' Glass passivated junction Ideal for printed circuit board Reliable low cost construction utilizing molded


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    DBL101G -DBL107G MIL-STD-202, D8L10XG DBL10XG WIDTH-300/iS 101G 103G 105G 106G DBL107G PDF

    Untitled

    Abstract: No abstract text available
    Text: T ! J DRAWING MADE IN THIRD A N G L E P RO J EC T IO N T H I S DRAWING IS U N PU B L I S H E D . ^ R E L E A S E D FOR P U B L I C A T I O N 19 1 2 3 . j Copy ri ght 19 by A M P I ncorporated , Ha r r i s b u r g , P a , a l l i nt er n a t i on a l rights


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    000ZOO 102G30 PDF

    C175

    Abstract: SSL-LX30FT14GD SSL-LX30FT14ID
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S A - L X B 102G311X6D - 5 2.0 0 [2 .0 4 7 ] 03.00 [00.118] 5.00 [0.197] 7,00 [0,276] ooooooooo 10 P L S w ELECTRO-OPTICAL CHARACTERISTICS Ta = 25’C 5,00 [0,197] PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE (TYP.)


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    02G311 100jjA 565nm GREEN/635nm 50LDERINC C175 SSL-LX30FT14GD SSL-LX30FT14ID PDF

    Untitled

    Abstract: No abstract text available
    Text: FILm-POT Miniature Potentiometers XV0102G, XV081N FEATURES 1. 8 a n d 10 m m v e rs io n s n e w ly d e s ig n e d to c a tc h u p w ith tre n d s o f e le c tro n ic e q u ip m e n ts b e c o m in g s m a lle r a n d th inner. 2. H ig h p e rfo rm a n c e m in ia tu re p o te n tio m e te r c re a te d b y in c o rp o ra tin g N O B L E 'S IC B In te g ra te d C o n ­


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    XV0102G, XV081N XV0102G C5261 100mV 02kgf 510gf| PDF

    Untitled

    Abstract: No abstract text available
    Text: MwT-102G XTH m 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY B • » m 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 7.0 dB TYPICAL SMALL SIGNAL GAIN 1.9:1 TYPICAL VSWR 16 dBm TYPICAL P1dB ±0.75 dB TYPICAL OUTPUT POWER FLATNESS SINGLE SUPPLY BIAS


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    MwT-102G MwT-102G-GFP -M79- FAX510-651-2208 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION: emSTOHEH COPY MECHANICAL: MATERIAL: #CARD INSERTION FORCE - 511g MAX. #CARD WITHDRAWAL FORCE - 102g MIN. *INTERTIDN CYCLES - 100000 CYCLES MIN. ^OPERATING TEMPERATURE RANGE • -40*C- ^HOUSING i PBT only f o r manual so ld e rin g n o t a v a ila b le by IR r e - flo w o r oven


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    08i8pin PDF

    HERA86G

    Abstract: No abstract text available
    Text: INDEX 1 N 3 4 A . .95 1 N 5 5 B . . 9 5 1 N 6 0 . . 95 1 N 8 7 . . 9 5 1 N 9 8 A . . 9 5 1 N 1 0 Q . .95 1 N 1 3 7 B . .9 5 1 N138B. .95 1 N 2 0 0 . . 9 5 1 N 2 0 1 . .95 1 N 2 0 2 . .95 1 N 2 0 3 . .95


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    N138B. ZM4740A ZM4741 ZM4742A ZM4743A ZM4744A ZM4745A ZM4746A ZM4747A ZM4748A HERA86G PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS DRAWING IS U N P U B LIS H E D . /'EY tU J COPYRIGHT 2003 2 3 RELEASED BY TYCO ELECTRONICS CORPORATION. F O R P U B L I C A T IO N 2003- LOC A L L RIGHTS RE S E RV E D . DIST R E V IS IO N S J H LTR DESCRIPTION C REVISED E C R - 0 5 - 0 0 1 0 6 7


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    23MAR05 09APR03 31MAR2000 102gf 300mm CV1717100 PDF

    HFA3102

    Abstract: No abstract text available
    Text: HFA3102 ÎH HARRIS S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Description Features H igh G a in -B a n d w id th P ro d u c t fT . . . . . 1 0G H z • H igh P o w er G a in -B a n d w id th P ro d u ct . . . 5GHz • H igh C u rre n t G a in (h FE) .


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    HFA3102 HFA3102 982E-01 400E-13 1340nm PDF

    Untitled

    Abstract: No abstract text available
    Text: L O C I DIS.T. AD D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N tamusu * T H IS D R A W IN G IS U N P U B L IS H E D . R E L E A S E D FOR P U B L IC A T IO N C C o p y r ig h t RESERVED. 19 AMP R E V IS IO N S A M P I n c o r p o r a t e d , H a r r i s b u r g , ' ^ \ . A l l . im te r k a tio k a l r i g h t s


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: I02C31 r LOC AD D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N T H IS D R A W IN G IS U N P U B L IS H E D , C C o p y r i g h t 19 RESERVED. AMP by PRODUCTS MAY BE R E L E A S E D FOR P U B L IC A T IO N i3 W 1 R E V IS IO N S i AMP I n c o r p o r a t e d , Ha r r is b u r g , P a . A l l i n t e r n a t io n a l r ig h ts


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    I02C31 102G91 PDF

    Untitled

    Abstract: No abstract text available
    Text: HER101G THRU HER108G TSC S 1 .0 AMP. Glass Passivated High Efficient Rectifiers -iiiiT i'i'iiriin T iT riiii'iw .tS B fg l. , .m Voltage Range 50 to 1000 Volts Current 1.0 Ampere E>0-41 ,« , , . , « »


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    HER101G HER108G DO-41 MIL-STD202, afl3554b PDF

    Untitled

    Abstract: No abstract text available
    Text: 8_ _7_ . V1.2 | NOTE: THIS DEVICE IS ROHS COMPLIANT. REVISIONS DATE APPROVED SYM DESCRIPTION DATE APPROVED 22/SEP/06' KEN A A "CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! DIMENSION PART NO. A B APPLICATION AND FEATURES


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    22/SEP/06' t0202G t0402G t0502G t0602G t0702G t0802G t0902G PHa001-Pt_ 02Gf-CP PDF

    switch AU 101

    Abstract: digitast
    Text: TO K O SW ITCHES A vailable only in Japan Switch applications (Available only in Japan) Class 76 X-f 7 Application Type Audio equip. Comment Video equip. DC b- For power switches NE18-2U NE18-2a Push AC 250V 6A MSA AC 250V 4A For key board switches MD Disc


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    NE18-2U NE18-2a 250mA 100mQ 50mi2 100miJ RTE02 RTE10 100mA switch AU 101 digitast PDF

    b 103g

    Abstract: DB10XG marking CODE GA DB101G DB107G DB106G
    Text: TAIWAN SEMICONDUCTOR RoHS DB101G- DB107G Single Phase 1.0 A M R Glass Passivated Bridge Rectifiers Q B C O M P L IA N C E A r - + .255 6.5 ,?45(ß.?) .2a5(7.2¿) Features <> <> UL Recognized File # E-96005 Glass passivated junction Ideal fo r printed circuit board


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    DB101G DB107G E-96C05 /0-375n MIL-STD-202. DB107G) b 103g DB10XG marking CODE GA DB107G DB106G PDF

    Untitled

    Abstract: No abstract text available
    Text: V2.1 8 7 NOTE: THIS DEVICE IS ROHS COMPLIANT. 6 5 4 2 REVISIONS SYM DESCRIPTION DATE APPROVED SYM DESCRIPTION DATE A A A A ♦ ‘ CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! B ±0.30 ORDER INFORMATION: RPHb001 -P tX X 0 2 G f-X X -X


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    RPHb001 1000MO 30/APR/08â 30/APR/08' PDF

    1N306

    Abstract: No abstract text available
    Text: 15. Oil .0 8 . Oil o 8.O+0.5 X empty B Rating Contacts / terminals copper alloy, silver plated over nickel 3A, 125V AC copper alloy, 2|jm gold plated over 3|jm nickel min.: 1|jA, 20mV DC max.: 25mA, 20V DC CIRCUIT DIAGRAM Type Circuit arrangement * A TERMINAL DETAIL


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    10m0hm /-102gf) 1N306 PDF