BYG50D
Abstract: BYG50M BYG50 BYG50G BYG50J BYG50K PHILIPS BYG50
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers
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M3D168
BYG50
DO-214AC;
OD106
BYG50D
BYG50M
BYG50G
BYG50J
BYG50K
PHILIPS BYG50
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sod81
Abstract: SOD-81 Philips MARKING CODE BYD13M full catalog "Philips Semiconductors" Catalog PHILIPS BYD13
Text: Philips Semiconductors - PIP - BYD13 series; Controlled avalanche rectifiers Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BYD13 series; Controlled avalanche rectifiers Information as of 2003-01-21
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BYD13
sod81
SOD-81
Philips MARKING CODE
BYD13M
full catalog
"Philips Semiconductors" Catalog
PHILIPS BYD13
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MSA474
Abstract: BYG50 MSA414 BYG50D BYG50G BYG50J BYG50K BYG50M
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Preliminary specification Controlled avalanche rectifiers
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M3D168
BYG50
DO-214AC;
OD106
MSA474
MSA414
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
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MGD487
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D168 BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers
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M3D168
BYG70
DO-214AC
MGD487
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G1.L
Abstract: BYD32 BYD32D BYD32G BYD32J MDA823
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD32 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers
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M3D423
BYD32
SCA60
135106/00/01/pp8
G1.L
BYD32D
BYD32G
BYD32J
MDA823
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mda810
Abstract: BYD52J sod120 G1.L BYD52 BYD52D BYD52G DSA004177
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD52 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers
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M3D423
BYD52
OD120
SCA60
135106/00/01/pp8
mda810
BYD52J
sod120
G1.L
BYD52D
BYD52G
DSA004177
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BYG60
Abstract: BYG60D BYG60G BYG60J BYG60K BYG60M
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers
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M3D168
BYG60
DO-214AC
BYG60D
BYG60G
BYG60J
BYG60K
BYG60M
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Diode PH 13D
Abstract: Diode PH 13K BYD13M Diode PH 13M 13D-PH BYD13J BYD13K BYD13 BYD13D BYD13G
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series
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M3D119
BYD13
MAM123
Diode PH 13D
Diode PH 13K
BYD13M
Diode PH 13M
13D-PH
BYD13J
BYD13K
BYD13D
BYD13G
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spark gap
Abstract: "silicon carbide" varistor curve tracer cost selenium diode silicon carbide varistor
Text: MICRO QUALITY / Application Notes SEM IC O N D U C TO R , INC. Controlled Avalanche Rectifiers Avalanche Large reverse biases, when applied to silicon rectifiers, can cause the rectifier to avalanche. The term “ avalanche' ’ refers to that critical reverse voltage at which further increases in voltage result in
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Varo R711
Abstract: R712 varo diode Varo R712X varo semiconductor R704 R716 R711 R711X R712X
Text: vy VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 214 271 -8511 TW X 910-860-5178 VARO 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with
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R711X
R712X
R714X
R716X
Varo R711
R712
varo diode
Varo R712X
varo semiconductor
R704
R716
R711
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R624
Abstract: R632X R628 R618 R604 silicon avalanche integrated bridge rectifiers R631 R602 R622 silicon avalanche integrated bridge rectifiers 15
Text: IB R SILICON AVALANCHE ^ac|ac]ac INTEGRATED BRIDGE RECTIFIERS • 15 AMP & 36 AMP THREE PHASE, FULL WAVE CASE NEGATIVE ■ Operation to full rated load at 100°C, Tc ■ Controlled Avalanche series with 250V, 450V, 650V & 850V minimum avalanche voltages VBR
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R611X
R612X
R614X
R616X
R631X
R632X
R634X
R636X
R624
R628
R618
R604
silicon avalanche integrated bridge rectifiers
R631
R602
R622
silicon avalanche integrated bridge rectifiers 15
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V627
Abstract: VE47 VE67 avalanche VE68 1000V controlled avalanche rectifiers 190215 VE28 VE108
Text: MICROSEMI CORP/ MICRO bllSÌO? Q001Q35 =1 • T-£L3-o5 Quality 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 25V, 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings
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Q001Q35
V627
VE47
VE67
avalanche
VE68
1000V controlled avalanche rectifiers
190215
VE28
VE108
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VS247
Abstract: VS148 VS447 S848 s448 VS448
Text: EBR MICRO QUALITY / S E M IC O N D U C T O R , IN C . 2 Amp Epoxy Bridge Rectifiers vs Series Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Series with 50V, 100V,
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VS247,
VS447,
VS148,
VS247
VS148
VS447
S848
s448
VS448
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Untitled
Abstract: No abstract text available
Text: 3 AMP AXIAL LEAD DIFFUSED SILICON RECTIFIERS 100A and 200A peak surge current Controlled avalanche series has 250V, 450V, 650V and 850V min. avalanche voltages VBR Non-controlled avalanche series with 50V, 100V, 200V, 400V, 600V, 800V and 1000V (VRRM) Fast recovery series with 200 nanosec.
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V3510
V350X
V351X
V352X
V354X
V356X
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V3510
Abstract: No abstract text available
Text: MICRO QUALITY / S E M ICO ND UC TO R , INC. 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings
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XXt02
V3510
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R716X
Abstract: R711
Text: MICRO QUALITY / S E M IC O N D U C T O R , IN C . 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with 250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 100V, 200V, 400V and 600V VRRM Ratings High Cycle Surge Current
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J377
Abstract: silicon power J377 R704 Diode IR714 R711X R706 R711 R716 R702 R712
Text: ShE T> m m C R O S E M I CORP/ MICRO bllS'lD? GDD1321 ñbS • MÖL / ^2307 M IC R O QUALITY / SEMICONDUCTOR, INC 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with 250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with
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GDD1321
J377
silicon power J377
R704 Diode
IR714
R711X
R706
R711
R716
R702
R712
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V334X
Abstract: V330X v330
Text: MICRO QUALITY / SE M ICO ND UC TO R , INC. 3 Amp Diffused Silicon Epoxy Rectifiers with 100 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V V RRM Ratings
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V3310
V330X
V331X
V332X
V334X
V336X
v330
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mr5060
Abstract: MR5061 IC MR5060 sc 3228 MR5060 ic
Text: motorola sc -C DI ODE S/ OPT OJ 1 2E D I b3b?ESS 007T?53 3 | _ „ T-o\-\e MOTOROLA MR5060 MR5061 SEMICONDUCTOR TECHNICAL DATA AVALANCHE RECTIFIERS LEAD-MOUNTED AVALANCHE RECTIFIERS . . . subm iniature size, axial lead-m ounted rectifiers for generalpurpose, low-pow er applications requiring avalanche protection.
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MR5060
MR5061
MR5061
IC MR5060
sc 3228
MR5060 ic
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vh248
Abstract: VH247 VH148
Text: EBR MICRO QUALITY / SEM IC O N D U C TO R , INC. 6 Amp Epoxy Bridge Rectifiers vh Series Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings
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IN4437
Abstract: IN4436 IN4438
Text: niCROSEMI CORP/ niCRO 5bE D • bllSTO? DDD131S 5bl ■ H Ö L M IC R O Q U A L IT Y / | n n XJ jlV '- ^ 23- 0 '! SEMICONDUCTOR, INC 10 Amp Silicon Avalanche Integrated Full Wave Bridge Rectifiers Controlled Avalanche Junctions with 250V, 450V, and 650V, Minimum Avalanche Ratings
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DDD131S
IN4436,
IN4437,
IN4438,
IN4437
IN4436
IN4438
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VS148
Abstract: VS248 VS647 VS447 VH247 VJ847 VH148 VE48 VE87 VE88
Text: [jg [^ 5 EPOXY BRIDGE RECTIFIERS 1 AM P 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt- age V ■ Non-controlled Avalanche series with 50V, 100V, 200V, 400V, 600V and aoov, and 1000 (vRR> ■ Fast recovery series with 200 nanosec.
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VJ048
VJ148
VJ248
VJ448
VJ648
VJ848
VJ1048
VJ048X
VJ148X
VJ248X
VS148
VS248
VS647
VS447
VH247
VJ847
VH148
VE48
VE87
VE88
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VE27
Abstract: VE48 ve28 avalanche VE-27 1000V controlled avalanche rectifiers VE67/VE68
Text: EBR M IC RJP CILIA L IT Y / SEM IC O N D U C TO R , INC. 1 Amp Epoxy Bridge Rectifiers VE Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 50V, 100V, 200V, 400V, 600V, 800V, and 1000V V RRM Ratings
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VfVE47
VE108
VE27
VE48
ve28
avalanche
VE-27
1000V controlled avalanche rectifiers
VE67/VE68
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VS648
Abstract: vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148
Text: VARO SEMICONDUCTOR, INC. G P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS 1 AMP 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt age8 (V br) ■ Non-controlled Avalanche series with 50V,
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ReJ447
DLS-042
VJ647
VJ847
VJ048
VJ148
VS648
vs447
VS847
varo VS247
Varo Semiconductor VS247
VJ148
VS647
Vj248 varo
VS247
VS148
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