tda8841 s1
Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
Text: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'
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DN-54
tda8841 s1
saf7730hv
om8839ps
phx4nq60e
TDA8842 s1
Philips SAF7730HV
CP3236D
BB 505 Varicap Diode
TDA8841 S1 datasheet
tda8844s1
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STK2N80
OT-194
P032B
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UZ80A
Abstract: No abstract text available
Text: SGS-THOMSON £j ï ULKgraMOeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI • . . . . . . V dss RDS on Id 800 V 800 V <3 0 < 3 0. 3.8 A 2.4 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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BUZ80A
BUZ80AFI
UZ80A
UZ80AFI
UZ80A
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9N80
Abstract: 9N80FI
Text: SGS-THOMSON ï ULKgraMOeS £j STH9N80 STH9N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 9N 80 STH 9N 80FI • . . . . . . V dss RDS on Id 800 V 800 V < 1 Q. < 1 Q. 9 A 5 .6 A TYPICAL RDS(on) = 0.87 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STH9N80
STH9N80FI
STH9N80
9N80
9N80FI
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STHV82
Abstract: sthv 82
Text: £jï 82 82 SGS-THOMSON ULKgraMOeS STHV STHV FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV82 S TH V82FI 800 V 800 V • . . . . . . RDS on < 2 0 < 2 0 Id 5 .5 A 3 .6 A TYPICAL RDS(on) = 1 -65 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STHV82
V82FI
sthv 82
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 5 S T P 3 N 1 oo S T P 3 N 1 OOFI iL iO M iQ £ I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100 S TP 3N 100FI • ■ . ■ ■ . V dss R DS(on) Id 1000 V 1000 V < 5Q < 5 £2 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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100FI
STP3N100
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Untitled
Abstract: No abstract text available
Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V
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SSP5N80A
iti4142
003b32fl
O-220
00M1N
7Tb4142
DD3b33D
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APT30M85BNR
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y * APT30M85BNR 300V APT3010BNR 300V POWER MOS IV' 40A 0.0850 35A 0.1000 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D All Ratings: Tc = 25°C unless otherwise specified.
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APT30M85BNR
APT3010BNR
O-247AD
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H-312
Abstract: No abstract text available
Text: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHIM7250
IRHN8S50
H-321
IRHN7250,
IRHN8250
H-322
H-312
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Untitled
Abstract: No abstract text available
Text: 7^2^537 OOMblfl? IDI •S6TH SGS-THOMSON S T P 3 N80XI id U O T * ! N - CHANNEL ENHANC EM ENT MODE POW ER MOS TRAN SISTO R TYPE STP3N80XI ■ . ■ ■ . ■ ■ V dss RDS on Id 800 V < 4 .5 n 1 .7 A TYPICAL RDS(on) = 3.9 Q AVALANCHE RUGGED TECHNOLOGY
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N80XI
STP3N80XI
ISOWATT221
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5n90fi
Abstract: No abstract text available
Text: £ j ï SGS-THOMSON S T P 5N 90 S T P 5N 90FI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP5N 90 STP5N 90FI • . . . . . . V d ss RDS on Id 900 V 900 V < 2.4 Q. < 2.4 Q. 5 A 2.8 A TYPICAL RDS(on) = 1.9 £2 AVALANCHE RUGGED TECHNOLOGY
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O-220
ISOWATT220
5n90fi
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Untitled
Abstract: No abstract text available
Text: DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET ZDM4206N PROVISIONAL DATASHEET ISSUE A - OCTOBER 94 Di L i - — L I Gi Dì I I > I Si D2 I I 1 1 G? d2 1 1 S2 I I PARTMARKING DETAIL - M4206N ABSOLUTE M A X IM U M RATINGS. PARAM ETER SY M B O L VALU E
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ZDM4206N
M4206N
Derate200
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Untitled
Abstract: No abstract text available
Text: ¿57 S T P 2 N 80 S T P 2 N 8 0 FI S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N80 STP2N80FI V dss RDS on Id 800 V 800 V <7 a < 7 0. 2.4 A 1.5 A • TYPICAL R D S (on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY
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STP2N80
STP2N80FI
STP2N80/FI
ISQWATT220
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l C8204-1 S e m ic o n d u c to r , I n c , thru 4 0 0 M IL L IW A T T H E R M E T IC A L L Y S E A L E D G L A S S S IL IC O N lo w C8204-16 ZENER DIODES n o is e MAXIMUM RATINGS * FEATURES: Operating Tem perature: • Low Noise Avalanche Diodes
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C8204-1
C8204-16
TG0037Ã
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Untitled
Abstract: No abstract text available
Text: m HARRIS s e m ic o n d u c to r R H R G 5070, R H R G 5080, R H R G 5090, R H R G 5 0 100 Aprii 1995 50A, 700V - 1000V Hyperfast Diodes Package Features JEDEC STYLE 2 LEAD TO-247 • Hyperfast with Soft R ecovery.<75ns • Operating Tem p eratu
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O-247
RHRG5070,
RHRG5080,
RHRG5090,
RHRG50100
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Untitled
Abstract: No abstract text available
Text: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C
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RHRP870,
RHRP880,
RHRP890,
RHRP8100
T0220AC
RHRP890
TA49060)
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STH5N90
Abstract: STH5N90FI transistor DI 468 circuit diagram application 100S
Text: I 7^23? 0045fl7b flOS • S G T H _ SGS-THOMSON ¡[LiOT «! STH5N90 STH5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH5N90 STH5N90FI ■ . . ■ . . ■ V dss RDS on Id 900 V 900 V < 2.4 n < 2.4 n 5.3 A 3.5 A TYPICAL R D S (o n ) = 1 .9 !)
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0D45fl7b
STH5N90
STH5N90FI
STH5N90
STH5N90FI
1000VDS
GC3475Q
qgqg37
transistor DI 468 circuit diagram application
100S
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8n80
Abstract: STW8N80 KT 0803 K
Text: £ STH8N80 FI STW8N80 SGS-THOMSON ï ULKgraMOeS j N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 8N 80 STH 8N 80FI STW 8N80 • . . . . . . V dss RDS on Id 800 V 800 V 800 V < 1 .2 il 8.2 A 5. 1 A 8.2 A < 1 .2 il < 1 .2 Q TYPICAL RDS(on) = 0.98 £2
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STH8N80
STW8N80
O-247
O-218
ISOWATT218
8n80
STW8N80
KT 0803 K
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C1359
Abstract: MJH16018 K2603 C26CH 340E-01 147J tg-500 175C MUR30100E dl 0165
Text: MOTOROLA SC DIODES/OPTO O rder this data sheet by M UR301 ODE/D b3b?555 0001311= 2 5SE D MOTOROLA V -Z 3 -0 7 I SEMICONDUCTOR TECHNICAL DATA M UR30100E S w itc h m o d e P o w e r R e c tifie r TM . . . designed for use in switching power supplies, inverters and as freewheeling diodes,
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MUR3010DE/D
MUR30100E
O-218
2513JR
CJ359Â
C1359
MJH16018
K2603
C26CH
340E-01
147J
tg-500
175C
MUR30100E
dl 0165
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f0pf
Abstract: KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode
Text: Characteristics and Use of Photodiodes INTRODUCTION Photodiodes are sem iconductor light sensors that generate a current or voltage when the P-N junction in the sem iconductor is illum inated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to
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780nm
B0020EA
B0016EA
f0pf
KPDB0001EA
C0002EA
photodiode PN
S4753
GaAsP Laser Diode
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5358A
Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE
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Q0305Sb
251F/V
TSD4M251F
TSD4M251V
STH33N20FI
T-91-20
O-240)
PC-029«
5358A
d 317 transistor
TSD4M251V
SP 358 s
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transistor c 3274
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH51 has an application specific s ta te -o f-a rt die designed for use In 50 Watts Halogen electronic transformers.
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BUH51
BUH51
transistor c 3274
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P2600BA70
Abstract: 380 volt 50 hz 50 amp triac TRIAC FT 1017 P0300EA70 triac 230v 50hz 5kw P3100EA70 P2300EA70 Siebe PP-2046 P3203AA P3100BA
Text: TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-92 1801 H U R D D R IV E IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 -1 5 1 5 FAX 2 1 4 /5 5 0 -1 3 0 9 MT1 MT2 DO -214AA M odified TO-220 SIDACtor 27 - 540 volts G en e ral In fo rm a tio n
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-214AA
O-220
P2600BA70
380 volt 50 hz 50 amp triac
TRIAC FT 1017
P0300EA70
triac 230v 50hz 5kw
P3100EA70
P2300EA70
Siebe PP-2046
P3203AA
P3100BA
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H16S
Abstract: je210
Text: M OT O RO LA SC XSTRS/R 1EE F § b3fc.72S4 MOTOROLA ^ | MJ8502 MJ8503 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s O O flim ? D a ta . S h e e t S.0 A M P E R E NPN SILICON POWER TR AN SISTO RS SWITCHMODE SE R IE S NPN SILICO N POWER TRANSISTORS
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MJ8502
MJ8503
J8503
H16S
je210
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