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    AV SMD TRANSISTOR Search Results

    AV SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AV SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N1 smd transistor

    Abstract: L02 SMD ir remote control light circuit diagram GP1US30XP GP1US301XP gp1us301 smd "code rc" transistor GL521 GP1US300XP PD49PI
    Text: GP1US30XP Series GP1US30XP Series SMD Type IR Detecting Unit for Remote Control • Features ■ Outline Dimensions Unit : mm 1.95 0.9 0.9 ④GND ②Vout 0.65 ②Vout Center of PD ④GND ■ Applications 1. AV equipments 2. Home appliances ③GND ①Vcc


    Original     		PDF GP1US30XP GP1US30XPseries OP06014A N1 smd transistor L02 SMD ir remote control light circuit diagram GP1US301XP gp1us301 smd "code rc" transistor GL521 GP1US300XP PD49PI

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    BLF6G22LS-100

    Abstract: RF35 TRANSISTOR SMD BV
    Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV

    4N0406

    Abstract: IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2
    Text: IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0406 IPI70N04S4-06 4N0406 IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2

    146a marking diode

    Abstract: IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode
    Text: IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.7 mΩ ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P0305 IPI80P03P4-05 146a marking diode IPB80P03P4-05 PG-TO263-3-2 IPP80P03P4-05 ipi80p03p4-05 4p03 6V 100 smd diode

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03

    3N10L16

    Abstract: DIODE smd marking v1 smd diode 949
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI50N10S3L-16 PG-TO263-3-2 3N10L16 DIODE smd marking v1 smd diode 949

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2

    3N10L12

    Abstract: IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L12 IPI70N10S3L-12 3N10L12 IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 PG-TO263-3-2 DIODE smd marking v1 3N10L

    4N04L04

    Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N04S4L-04 PG-TO263-3-2 4N04L04 DIODE smd marking Ag IPP80N04S4L-04 m9120 4N04 SMD DIODE 681

    4N06L05

    Abstract: DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode
    Text: IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L05 IPI80N06S4L-05 4N06L05 DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode

    4N04L08

    Abstract: DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q
    Text: IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 7.6 mΩ ID 45 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L08 IPI45N04S4L-08 4N04L08 DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l

    4n04l04

    Abstract: IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L04 IPI80N04S4L-04 4n04l04 IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04

    C5750X7R1H106M

    Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
    Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140

    4N06L07

    Abstract: smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809
    Text: IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 6.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L07 IPI80N06S4L-07 4N06L07 smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809

    SMD-2520

    Abstract: 3N10L smd diode 104
    Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI70N10S3L-12 SMD-2520 3N10L smd diode 104

    ANPS071E

    Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03

    4p03L11

    Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
    Text: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L11 IPI45P03P4L-11 4p03L11 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03

    3N10L16

    Abstract: 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1
    Text: IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 15.4 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 50 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		PDF IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N10L16 IPI50N10S3L-16 3N10L16 30025A DIODE smd marking Ag IPB50N10S3L-16 smd diode 949 SMD TRANSISTOR MARKING DD IPI50N10S3L-16 IPP50N10S3L-16 PG-TO263-3-2 DIODE smd marking v1

    IPP100N04S4-H2

    Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI100N04S4-H2 IPP100N04S4-H2 4N04H2 MJ-39