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    ASI10730 Search Results

    ASI10730 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10730 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    VHB50-28S

    Abstract: ASI10730
    Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD


    Original     		PDF VHB50-28S VHB50-28S 112x45° ASI10730

    ASI10730

    Abstract: VHB50-28S
    Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB50-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H MAXIMUM RATINGS J G #8-32 UNC-2A IC 6.5 A VCBO 65 V VCEO 35 V VEBO


    Original     		PDF VHB50-28S VHB50-28S 112x45° ASI10730 ASI10730

    Untitled

    Abstract: No abstract text available
    Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold Metalization System


    Original     		PDF VHB50-28S VHB50-28S 112x45° ASI10730