Untitled
Abstract: No abstract text available
Text: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C typical High gain bandwidth product: 200 MHz
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MAT12
MAT12
22306-A
MAT12AHZ
D09044-0-7/10
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kt 784
Abstract: MAT02 mat04 "direct replacement" multifunction converter transdiode power supply LM194 Precision Monolithics OP07 MAT02EH op32
Text: BACK a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀
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LM194/394
MAT02
MAT02
X1000
kt 784
mat04 "direct replacement"
multifunction converter
transdiode power supply
LM194
Precision Monolithics OP07
MAT02EH
op32
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kt 784
Abstract: antilog amplifier "logarithmic amplifier" LM194 MAT02FH op07 ic metal package datasheet sy-15 8c 617 transistor I2 200-5 MAT02
Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at I C = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀
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MAT02
LM194/394
MAT02
X1000
kt 784
antilog amplifier
"logarithmic amplifier"
LM194
MAT02FH
op07 ic metal package datasheet
sy-15
8c 617 transistor
I2 200-5
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Untitled
Abstract: No abstract text available
Text: Audio, Dual-Matched NPN Transistor MAT12 Data Sheet PIN CONFIGURATION Very low voltage noise: 1 nV/√Hz maximum at 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C typical
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MAT12
MAT12
22306-A
MAT12AHZ
D09044-0-1/14
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multifunction converter
Abstract: mat02
Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀
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LM194/394
MAT02
C00283
multifunction converter
mat02
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LM194 NPN Monolithic Transistor Pair
Abstract: LM194 MAT02 MAT02FH NPN Monolithic Transistor Pair antilog amplifier I2 200-5 mat04 "direct replacement" op07 ic metal package datasheet Precision Monolithics
Text: a Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀
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MAT02
LM194/394
MAT02
LM194 NPN Monolithic Transistor Pair
LM194
MAT02FH
NPN Monolithic Transistor Pair
antilog amplifier
I2 200-5
mat04 "direct replacement"
op07 ic metal package datasheet
Precision Monolithics
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KT 185
Abstract: MAT02 MAT02F MAT02FH MAT04 OP07 OP15 AMP01 MAT02E MAT02EH
Text: a FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 V/؇C max Improved Direct Replacement for LM194/394
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LM194/394
MAT02
MAT02
KT 185
MAT02F
MAT02FH
MAT04
OP07
OP15
AMP01
MAT02E
MAT02EH
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Untitled
Abstract: No abstract text available
Text: Low Noise, Matched Dual Monolithic Transistor MAT02 a PIN CONNECTION FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain hFE : 500 min at IC = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.3 ⍀
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MAT02
LM194/394
MAT02
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Untitled
Abstract: No abstract text available
Text: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C High gain bandwidth product: 200 MHz
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SSM2212
SSM2212
SSM2212RZ
SSM2212RZ-R7
SSM2212RZ-RL
D09043-0-7/10
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AD8512
Abstract: AMP02 MAT12 NPN MATCHED PAIRS 1N914 MAT02 MAT-12 Package TO-78
Text: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C typical High gain bandwidth product: 200 MHz
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MAT12
MAT12
22306-A
MAT12AHZ
D09044-0-7/10
AD8512
AMP02
NPN MATCHED PAIRS
1N914
MAT02
MAT-12
Package TO-78
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2SA1316
Abstract: No abstract text available
Text: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SA1316
2SC3329
2SA1316
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2sc3329
Abstract: 2SA1316
Text: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SC3329
2SA1316
2sc3329
2SA1316
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2SA1316
Abstract: 2sa131 2SC3329 2SC332
Text: 2SA1316 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1316 For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers Unit: mm • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SA1316
2SC3329
2SA1316
2sa131
2SC3329
2SC332
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2SC3329
Abstract: No abstract text available
Text: 2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
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2SC3329
2SA1316
2SC3329
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ssm2212
Abstract: QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers
Text: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz
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SSM2212
SSM2212
SSM2212RZ
SSM2212RZ-R7
SSM2212RZ-RL
D09043-0-7/10
QB1E
NPN Monolithic Transistor Pair
R840
SSM221
"logarithmic amplifier"
ssm2212rz
AD8512
MS-012-AA
Analog Devices Logarithmic Amplifiers
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Untitled
Abstract: No abstract text available
Text: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors
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soc2907
Abstract: 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
soc2907
2N2907AUB
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2SC4685
Abstract: No abstract text available
Text: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800~320u (Vc e = 2V> Ic = 0-5A) •• • • H i (z j — nv/n« '> >."•“ “ •/ v *
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2SC4685
2SC4685
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diode pj 77
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T• nV f i 7 7a f t f i mAm F■ N ■« 8ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62786AFN is eight Channel Non-Inverting Source
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TD62786AFN
TD62786AFN
SSOP18PIN
500mA/ch
SSOP18-P-225-0
diode pj 77
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5459 T O SH IB A TRA NSISTO R SILICON NPN TRIPLE DIFFUSED TYPE 2SC5459 Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH VOLTAGE SW ITCH IN G APPLICATIO NS 1 0 ± 0 .3 • • • ^ 3 . 2 i0 . 2 2.7± m DC-DC CO NVERTER APPLICATIO NS High Speed Switching : tf = 0.3 /us (Max. (Ig = 1.2 A)
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2SC5459
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2SC5201
Abstract: No abstract text available
Text: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • Unit in mm High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A
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2SC5201
O-92MOD
2SC5201
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2SD2Q12
Abstract: No abstract text available
Text: TOSHIBA 2SD2012 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2Q12 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , $ 3.2 ± 0.2 2.7 ± 0 2 High DC C urrent Gain : IrpE 1 = 100 (Min.) Low Saturation Voltage V’ nVy.ci T w _( .»_ ai.\
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2SD2012
2SD2Q12
2SD2Q12
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2SC5201
Abstract: No abstract text available
Text: 2SC5201 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5201 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 5.1 MAX. • • High Voltage : V c e O - 600 V Low Saturation Voltage •• V/~ITI ' v ^ .c j iA = 1 nV ÍM a y ì Tri = 9.0 m A
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2SC5201
O-92MOD
2SC5201
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multiplier log-antilog
Abstract: No abstract text available
Text: ANALOG DEVICES Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 |xV max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/VHz max High Gain hFE : 500 min at lc = 1 mA 300 min at lc = 1 fiA Excellent Log Conformance: rBE - 0.3 i l
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LM194/394
MAT02
MAT02
X1000Am
multiplier log-antilog
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