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    APT64GA90LD30 Price and Stock

    Microchip Technology Inc APT64GA90LD30

    IGBT PT 900V 117A TO264
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    Onlinecomponents.com APT64GA90LD30
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    NAC APT64GA90LD30 Tube 32
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    APT64GA90LD30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT64GA90LD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; Original PDF

    APT64GA90LD30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT64GA90B2D30

    Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
    Text: APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    PDF APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS

    Fast Recovery Bridge Rectifier, 60A, 600V

    Abstract: APT10035LLL APT64GA90LD30 MIC4452
    Text: APT64GA90LD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    PDF APT64GA90LD30 shifte106) Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    PDF APT64GA90LD30 APT64GA90B2D30 O-247

    IGBT 900v 60a

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
    Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    PDF APT64GA90LD30 APT64GA90B2D30 IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30

    Untitled

    Abstract: No abstract text available
    Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original
    PDF APT64GA90LD30 APT64GA90B2D30 APT64GA90LD30 APT64GA90B2D30 O-247

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit