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    APT50GP60J Search Results

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    APT50GP60J Price and Stock

    Microchip Technology Inc APT50GP60J

    IGBT MOD 600V 100A 329W ISOTOP
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    DigiKey APT50GP60J Tube 20
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    Mouser Electronics APT50GP60J
    • 1 $32.13
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    Newark APT50GP60J Bulk 20
    • 1 $32.13
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    Future Electronics APT50GP60J 20
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    Microchip Technology Inc APT50GP60J Tube 26 Weeks
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    Onlinecomponents.com APT50GP60J
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    TME APT50GP60J 1
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    NAC APT50GP60J Tube 11
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    Master Electronics APT50GP60J
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    • 100 $25.37
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    Microchip Technology Inc APT50GP60JDQ2

    IGBT MOD 600V 100A 329W ISOTOP
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    DigiKey APT50GP60JDQ2 Tube 20
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    Avnet Americas APT50GP60JDQ2 Tube 26 Weeks 20
    • 1 $30.3408
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    Mouser Electronics APT50GP60JDQ2
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    Newark APT50GP60JDQ2 Bulk 20
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    Microchip Technology Inc APT50GP60JDQ2 Tube 26 Weeks
    • 1 $32.42
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    TME APT50GP60JDQ2 1
    • 1 $46.88
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    NAC APT50GP60JDQ2 Tube 11
    • 1 $30.07
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    Master Electronics APT50GP60JDQ2
    • 1 $30.96
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    APT50GP60J Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT50GP60J Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 100A 329W SOT227 Original PDF
    APT50GP60J Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT50GP60J Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 100A 329W SOT227 Original PDF
    APT50GP60JDF2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT50GP60JDQ2 Advanced Power Technology IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 100A 329W SOT227 Original PDF
    APT50GP60JDQ2 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT50GP60JDQ2 Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT 600V 100A 329W SOT227 Original PDF

    APT50GP60J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60JD2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60JD2

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.


    Original     		PDF APT50GP60JDQ2 E145592

    ic 7435

    Abstract: APT50GP60J
    Text: APT50GP60J 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60J ic 7435 APT50GP60J

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60JDF2 Col496)

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60J

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60JDF2

    APT50GP60JDQ2

    Abstract: APT6017LLL
    Text: APT50GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.


    Original     		PDF APT50GP60JDQ2 E145592 APT50GP60JDQ2 APT6017LLL

    Untitled

    Abstract: No abstract text available
    Text: APT50GP60J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60J

    APT50GP60JDF2

    Abstract: APT50G
    Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT50GP60JDF2 APT50GP60JDF2 APT50G

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		PDF APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500