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APT5024BLL Price and Stock

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Microchip Technology Inc APT5024BLLG MOSFET N-CH 500V 22A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT5024BLLG	Tube			70	1 - 10 - 100 $8.25 1000 $8.25 10000 $8.25	Buy Now
Avnet Americas	APT5024BLLG	Tube		26 Weeks	70	1 $8.085 10 $8.085 100 $6.6885 1000 $6.71352 10000 $6.71352	Buy Now
Mouser Electronics	APT5024BLLG					1 $8.25 10 $8.25 100 $8.25 1000 $8.25 10000 $8.25	Get Quote
Newark	APT5024BLLG	Bulk			70	1 $8.25 10 $8.25 100 $7.12 1000 $6.69 10000 $6.69	Buy Now
Microchip Technology Inc	APT5024BLLG	Tube		26 Weeks		1 $8.25 10 $8.25 100 $7.12 1000 $6.53 10000 $6.31	Buy Now

Onlinecomponents.com	APT5024BLLG					1 - 10 $7.99 100 $6.86 1000 $6.41 10000 $6.41	Buy Now
TME	APT5024BLLG				1	1 $11.99 10 $9.49 100 $9.49 1000 $9.49 10000 $9.49	Get Quote
NAC	APT5024BLLG	Tube			46	1 $7.87 10 $7.87 100 $7.13 1000 $6.52 10000 $6.52	Buy Now
Master Electronics	APT5024BLLG					1 - 10 $7.99 100 $6.86 1000 $6.41 10000 $6.41	Buy Now

APT5024BLL Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT5024BLL		Advanced Power Technology	POWER MOS 7 R FREDFET		Original	PDF
APT5024BLL		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF
APT5024BLL		Microsemi	Power MOS 7 Low Loss MOSFET		Original	PDF
APT5024BLLG		Microsemi	Power MOSFET; Package: TO-247 [B]; ID (A): 22; RDS(on) (Ohms): 0.24; BVDSS (V): 500;		Original	PDF

APT5024BLL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT5024BLL APT5024SLL O-247 O-247
APT5024BLL Abstract: APT5024SLL Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT5024BLL APT5024SLL O-247 O-247 APT5024BLL APT5024SLL
Untitled Abstract: No abstract text available Text: APT5024BLL G APT5024SLL(G) 500V 22A 0.240Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching	Original	PDF	APT5024BLL APT5024SLL O-247
Untitled Abstract: No abstract text available Text: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT5024BLL APT5024SLL O-247 O-247
uj 99 Abstract: APT5024BLL APT5024SLL Text: APT5024BLL APT5024SLL 500V 22A 0.240Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT5024BLL APT5024SLL O-247 O-247 uj 99 APT5024BLL APT5024SLL
Untitled Abstract: No abstract text available Text: APT5024BLL APT5024SLL 500V 22A 0.240W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT5024BLL APT5024SLL O-247 O-247
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original	PDF
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	PDF	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF
Severns Abstract: Oscillation mosfet zener diode capacitance ED31 diode POWER MOSFET APPLICATION NOTE parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications Text: Eliminating Parasitic Oscillation between Parallel MOSFETs Based in part on a paper presented at Power Electronics Technology 2003 conference titled “Issues with Paralleling MOSFETs and IGBTs” by Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology	Original	PDF	APT9901, ED-31, Severns Oscillation mosfet zener diode capacitance ED31 diode POWER MOSFET APPLICATION NOTE parallel connection of MOSFETs R. Severns "Controlling Oscillation in APT9901 Zener Diode frequency Zener Diode high frequency applications