APT30M40LVR Search Results

APT30M40LVR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT30M40LVR		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF
APT30M40LVRG		Microsemi	Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300;		Original	PDF

APT30M40LVR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT30M40 Abstract: No abstract text available Text: APT30M40LVR 76A 0.040Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.	Original	PDF	APT30M40LVR O-264 O-264 APT30M40LVR APT30M40
Untitled Abstract: No abstract text available Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Untitled Abstract: No abstract text available Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y ' 300V 76A 0.040Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT30M40LVR O-264 APT30M40LVR 00A/fis) MIL-STD-750 870uH, O-264AA
Untitled Abstract: No abstract text available Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y 300V 76A 0.040Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT30M40LVR O-264