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    APT30M40 Search Results

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    APT30M40 Price and Stock

    Microchip Technology Inc APT30M40JVR

    MOSFET N-CH 300V 70A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT30M40JVR Tube 20
    • 1 -
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    • 100 $35.9
    • 1000 $35.9
    • 10000 $35.9
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    Avnet Americas APT30M40JVR Tube 26 Weeks 20
    • 1 $33.6042
    • 10 $33.6042
    • 100 $27.651
    • 1000 $29.2634
    • 10000 $29.2634
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    Mouser Electronics APT30M40JVR
    • 1 $35.9
    • 10 $35.9
    • 100 $35.9
    • 1000 $35.9
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    Newark APT30M40JVR Bulk 20
    • 1 $35.9
    • 10 $35.9
    • 100 $31.02
    • 1000 $29.15
    • 10000 $29.15
    		Buy Now
    Microchip Technology Inc APT30M40JVR Tube 26 Weeks
    • 1 $35.9
    • 10 $35.9
    • 100 $31.02
    • 1000 $28.45
    • 10000 $27.52
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    Onlinecomponents.com APT30M40JVR
    • 1 $34.29
    • 10 $31.04
    • 100 $28.36
    • 1000 $27.93
    • 10000 $27.93
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    TME APT30M40JVR 1
    • 1 $51.92
    • 10 $41.29
    • 100 $41.29
    • 1000 $41.29
    • 10000 $41.29
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    NAC APT30M40JVR Tube 10
    • 1 $33.31
    • 10 $33.31
    • 100 $30.68
    • 1000 $28.44
    • 10000 $28.44
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    Richardson RFPD APT30M40JVR 20
    • 1 -
    • 10 -
    • 100 $30.8
    • 1000 $30.8
    • 10000 $30.8
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    Master Electronics APT30M40JVR
    • 1 $34.29
    • 10 $31.04
    • 100 $28.36
    • 1000 $27.93
    • 10000 $27.93
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    Microchip Technology Inc APT30M40JVFR

    MOSFET N-CH 300V 70A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT30M40JVFR Tube 20
    • 1 -
    • 10 -
    • 100 $40.76
    • 1000 $40.76
    • 10000 $40.76
    		Buy Now
    Avnet Americas APT30M40JVFR Tube 32 Weeks 20
    • 1 $39.9448
    • 10 $39.9448
    • 100 $33.9495
    • 1000 $33.6013
    • 10000 $33.6013
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    Mouser Electronics APT30M40JVFR
    • 1 -
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    • 100 $40.76
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    • 10000 $40.76
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    Newark APT30M40JVFR Bulk 20
    • 1 $40.76
    • 10 $40.76
    • 100 $35.18
    • 1000 $33.08
    • 10000 $33.08
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    Microchip Technology Inc APT30M40JVFR Tube 32 Weeks
    • 1 $40.76
    • 10 $40.76
    • 100 $35.18
    • 1000 $32.29
    • 10000 $31.22
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    Onlinecomponents.com APT30M40JVFR
    • 1 -
    • 10 $39.69
    • 100 $36.3
    • 1000 $36.3
    • 10000 $36.3
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    TME APT30M40JVFR 1
    • 1 $58.91
    • 10 $46.85
    • 100 $46.85
    • 1000 $46.85
    • 10000 $46.85
    		Get Quote
    NAC APT30M40JVFR Tube 9
    • 1 $37.8
    • 10 $37.8
    • 100 $34.82
    • 1000 $32.27
    • 10000 $32.27
    		Buy Now
    Richardson RFPD APT30M40JVFR 20
    • 1 -
    • 10 -
    • 100 $34.94
    • 1000 $34.94
    • 10000 $34.94
    		Buy Now
    Master Electronics APT30M40JVFR
    • 1 -
    • 10 $39.69
    • 100 $36.3
    • 1000 $36.3
    • 10000 $36.3
    		Buy Now

    APT30M40 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30M40B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT30M40B2VFRG Microsemi Power FREDFET; Package: T-MAX [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; Original PDF
    APT30M40B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M40B2VRG Microsemi Power MOSFET; Package: T-MAX ; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; Original PDF
    APT30M40JVFR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 70A SOT-227 Original PDF
    APT30M40JVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT30M40JVFR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 70A SOT-227 Original PDF
    APT30M40JVR Advanced Power Technology FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 70A SOT-227 Original PDF
    APT30M40JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M40JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 70A SOT-227 Original PDF
    APT30M40LVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT30M40LVFR Microsemi Power MOS V FREDFET Original PDF
    APT30M40LVFRG Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; Original PDF
    APT30M40LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT30M40LVRG Microsemi Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; Original PDF

    APT30M40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT30M40B2VFR

    Abstract: APT30M40LVFR
    Text: APT30M40B2VFR APT30M40LVFR 0.040Ω Ω 300V 76A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40B2VFR APT30M40LVFR O-264 O-264 APT30M40B2VFR O-247 APT30M40LVFR

    diode 304

    Abstract: 11200-1 B2VR 72 RG
    Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247 diode 304 11200-1 B2VR 72 RG

    Untitled

    Abstract: No abstract text available
    Text: APT30M40B2VFR APT30M40LVFR 0.040Ω Ω 300V 76A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40B2VFR APT30M40LVFR O-264 O-264 APT30M40B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT30M40LVFR 300V POWER MOS V 76A 0.040Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40LVFR O-264 O-264

    APT30M40

    Abstract: No abstract text available
    Text: APT30M40LVR 76A 0.040Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT30M40LVR O-264 O-264 APT30M40LVR APT30M40

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVFR 70A 0.040Ω 300V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40JVFR OT-227 APT30M40JVR E145592

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR 70A 0.040Ω 300V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVFR A d v a n ced P o w er Te c h n o l o g y 300V POWER MOS V 70A 0.040Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT30M40JVFR OT-227 APT30M40JVR Continuo65) E145592

    apt 2100

    Abstract: No abstract text available
    Text: APT30M40LVFR ADVANCED PO W ER Te c h n o l o g y 300V 76A 0.040Q POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT30M40LVFR O-264 apt 2100

    Untitled

    Abstract: No abstract text available
    Text: APT30M40LVFR A dvanced W 7Æ P o w e r Te c h n o l o g y 3oov POWER MOSV 76 a o .o 4 o n FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40LVFR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVFR A dvanced W 7Æ P o w e r Te c h n o l o g y 3o o v POWER MOSV 0.0400 7o a j FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40JVFR OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR ADVANCED P o w er T e c h n o lo g y 3o o v 7o a o .o a o íi POWER MOSV M Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40JVR OT-227 APT30M40JVR OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y ' 300V 76A 0.040Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40LVR O-264 APT30M40LVR 00A/fis) MIL-STD-750 870uH, O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT30M40LVFR A dvanced po w er Te c h n o lo g y 300V POWER MOS V 76A 0.040Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40LVFR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT30M40JVR A d van ced P o w er Te c h n o l o g y 300V 70A 0.040Q POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT30M40JVR OT-227 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT30M40LVR A dvanced P o w er Te c h n o l o g y 300V 76A 0.040Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40LVR O-264

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT30M40JVFR 300V POWER MOS V 70A 0.040Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT30M40JVFR OT-227 APT30M40JVFR OT-227

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr