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    APT1201 Price and Stock

    Microchip Technology Inc APT1201R2BFLLG

    MOSFET N-CH 1200V 12A TO247
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    Microchip Technology Inc APT1201R2BLLG

    MOSFET N-CH 1200V 12A TO247
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    NAC APT1201R2BLLG Tube 14
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    Microchip Technology Inc APT1201R5BVRG

    MOSFET N-CH 1200V 10A TO247
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    DigiKey APT1201R5BVRG Tube 30
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    Microchip Technology Inc APT1201R4BLLG

    MOSFET N-CH 1200V 9A TO247
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    DigiKey APT1201R4BLLG Tube 50
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    Microchip Technology Inc APT1201R4BLLG Tube 26 Weeks
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    Microchip Technology Inc APT1201R6BVRG

    MOSFET N-CH 1200V 8A TO-247
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    DigiKey APT1201R6BVRG Tube 60
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    APT1201 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1201R2BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1201R2BFLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 12A TO-247 Original PDF
    APT1201R2BLL Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF
    APT1201R2BLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT1201R2SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1201R2SLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT1201R2SLL Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF
    APT1201R4BFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1201R4BFLLG Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A TO-247 Original PDF
    APT1201R4BLL Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF
    APT1201R4BLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT1201R4SFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT1201R4SFLLG Microchip Technology MOSFET N-CH 1200V 9A D3PAK Original PDF
    APT1201R4SLL Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF
    APT1201R4SLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT1201R5BFVR Unknown Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF
    APT1201R5BVFR Microsemi Power MOS V FREDFET Original PDF
    APT1201R5BVFRG Microchip Technology MOSFET N-CH 1200V 10A TO247 Original PDF
    APT1201R5BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT1201R5SFVR Unknown Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF

    APT1201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT1201R2BFLL

    Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
    Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLLG 1400G PDF

    APT1201R4BLL

    Abstract: APT1201R4SLL
    Text: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT1201R4BLL APT1201R4SLL O-247 O-247 APT1201R4BLL APT1201R4SLL PDF

    APT1201R2BFLL

    Abstract: APT1201R2SFLL
    Text: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLL APT1201R2SFLL PDF

    APT1201R4BFLL

    Abstract: 05-07392 APT1201R4SFLL APT60D120B APT1201R4BFLLG
    Text: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		APT1201R4BFLL APT1201R4SFLL O-247 O-247 05-07392 APT60D120B APT1201R4BFLLG PDF

    APT1201R2

    Abstract: No abstract text available
    Text: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R2BLL APT1201R2SLL O-247 APT1201R2 PDF

    APT1201R6BVR

    Abstract: No abstract text available
    Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R6BVR O-247 O-247 APT1201R6BVR PDF

    TC 7107

    Abstract: No abstract text available
    Text: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT1201R2BLL APT1201R2SLL O-247 O-247 TC 7107 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVFR APT1201R5SVFR O-247 O-247 APT1201R5BVFR PDF

    TC 7107

    Abstract: IL 7107 N APT1201R2BLL APT1201R2SLL
    Text: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT1201R2BLL APT1201R2SLL O-247 O-247 TC 7107 IL 7107 N APT1201R2BLL APT1201R2SLL PDF

    APT1201R6BVR

    Abstract: APT1201R6SVR
    Text: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R6BVR APT1201R6SVR O-247 O-247 APT1201R6BVR/SVR APT1201R6BVR APT1201R6SVR PDF

    APT1201R4BFLL

    Abstract: APT1201R4SFLL 05-07392
    Text: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R4BFLL APT1201R4SFLL O-247 O-247 APT1201R4BFLL APT1201R4SFLL 05-07392 PDF

    APT1201R6BVFR

    Abstract: APT1201R6SVFR
    Text: APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V FREDFET 8A 1.600Ω BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R6BVFR APT1201R6SVFR O-247 O-247 APT1201R6BVFR 100mS APT1201R6SVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R6BVFR APT1201R6SVFR 8A 1.600Ω 1200V POWER MOS V FREDFET BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R6BVFR APT1201R6SVFR O-247 O-247 APT1201R6BVFR Continu10 100mS PDF

    APT1201R2BFLL

    Abstract: DSA00757 APT1201
    Text: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R2BFLL APT1201R2SFLL O-247 DSA00757 APT1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V R POWER MOS 7 MOSFET BLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R4BLL APT1201R4SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT1201R5BFVR

    Abstract: APT1201R5BVFR APT1201R5SFVR
    Text: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BFVR APT1201R5SFVR O-247 O-247 APT1201R5BVFR APT1201R5BFVR APT1201R5SFVR PDF

    APT1201R2BFLL

    Abstract: No abstract text available
    Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		APT1201R2BFLL APT1201R2SFLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		APT1201R4BFLL APT1201R4SFLL O-247 O-247 PDF

    APT1201R6BVR

    Abstract: BAT 545
    Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		APT1201R6BVR O-247 O-247 APT1201R6BVR BAT 545 PDF

    APT1201R4BFLL

    Abstract: APT1201R4SFLL APT60D120B 05-07392
    Text: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT1201R4BFLL APT1201R4SFLL O-247 O-247 APT1201R4BFLL APT1201R4SFLL APT60D120B 05-07392 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		APT1201R4BLL APT1201R4SLL O-247 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT1201R5BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 1200V io a 1.500a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT1201R5BVR O-247 MIL-STD-750 O-247AD PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF