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Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
100us
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Untitled
Abstract: No abstract text available
Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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Untitled
Abstract: No abstract text available
Text: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP10N70W-HF-3
AP10N70W-HF-3
AP10N70
10N70W
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