ANSI-J-STD-004 WIRE SOLDER Search Results

ANSI-J-STD-004 WIRE SOLDER Result Highlights (5)

Part	Manufacturer	Description
DE6B3KJ151KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ471KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ152MN4A	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ101KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ331KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

ANSI-J-STD-004 WIRE SOLDER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ansi-j-std-006 a solder wire Abstract: ansi-j-std-006 raychem cold shrink termination kit raychem termination kit PRICE J-STD-004 SN63 rol1 BK 1085 UL224 raychem termination kit and splicing kit AMS-DTL-23053/4 ATUM J-STD-004 solder wire rom1 Text: Terminals and Splices CWT-900X Series – Solder Sleeve Wire Splices L Max. ØA Min. Materials: • Insulation Sleeve: Heat-shrinkable, radiation cross-linked modified polyolefin. Transparent clear. • Solder Preform with Flux: Solder: Type CD18 per ANSI/J-STD-006 Flux: Type ROM1 per ANSI/J-STD-004 Application: These controlled soldering devices are designed to	Original	CWT-900X ANSI/J-STD-006 ANSI/J-STD-004 CWT9001-ND CWT9002-ND CWT90elf W211-ND W213-ND W215-ND W216-ND ansi-j-std-006 a solder wire ansi-j-std-006 raychem cold shrink termination kit raychem termination kit PRICE J-STD-004 SN63 rol1 BK 1085 UL224 raychem termination kit and splicing kit AMS-DTL-23053/4 ATUM J-STD-004 solder wire rom1	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72	PDF
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1	PDF
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA	PDF
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1	PDF
MPS751 equivalent Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS	Original	MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor	PDF
MMBF4856 Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to	Original	Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093	PDF
bf244 Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage	Original	226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819	PDF
MPSA92 equivalent Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA92* MPSA93 PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA92 MPSA93 Unit Collector – Emitter Voltage VCEO –300 –200 Vdc Collector – Base Voltage	Original	MPSA92* MPSA93 MPSA92 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPSA92 equivalent BC237	PDF

TO-226-AE Abstract: BC108 characteristic JFET BF245 BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C	Original	2N5484 2N5486 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 TO-226-AE BC108 characteristic JFET BF245 BC237	PDF
MPF102 equivalent transistor Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25	Original	MPF102 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF102 equivalent transistor mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note	PDF
WT transistor Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc	Original	MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA	PDF
MAD130P Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching	Original	MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72	PDF
Diode Motorola 711 2N2905A Abstract: pin configuration transistor BC547 2N2222 BC237 2N555 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching	Original	MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555	PDF
BC237 Abstract: S11S C4 SOT-323 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc	Original	MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323	PDF
transistor equivalent CT 2n5551 Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q	Original	1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter	PDF
MPS5771 Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage	Original	MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic	PDF
BC237 Abstract: TRANSISTOR bc177b Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel	Original	BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b	PDF
MPS6520 equivalent Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage	Original	MPSW01 MPSW01A* MPSW01A 226AE) Junc218A MSC1621T1 MSC2404 MPS6520 equivalent BC237 transistor Vbe 2n2222 Characteristic curve BC107	PDF

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ANSI-J-STD-004 WIRE SOLDER Search Results

ANSI-J-STD-004 WIRE SOLDER Result Highlights (5)

ANSI-J-STD-004 WIRE SOLDER Datasheets Context Search

ansi-j-std-006 a solder wire

BC237

BC237

BC237

BC237

2N16

2n2222 h 331 transistors

2N643

BC237

BC237

MPS751 equivalent

MMBF4856

bf244

MPSA92 equivalent

TO-226-AE

MPF102 equivalent transistor

WT transistor

MAD130P

Diode Motorola 711 2N2905A

BC237

transistor equivalent CT 2n5551

MPS5771

BC237

MPS6520 equivalent