BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors TO-92 MAC97A6,A8 TRIAC 1. ANODE MAIN FEATURES 2. GATE Symbol value unit IT RMS 1 A MAC97A6 400 V MAC97A8 600 VDRM/VRRM ITSM 8 3. ANODE V A DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits
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MAC97A6
MAC97A6
MAC97A8
MAC97A6)
600mA
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Untitled
Abstract: No abstract text available
Text: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P4J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRSM 500 V
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03P4J
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Untitled
Abstract: No abstract text available
Text: Thyristor SMD Type 0.47A All Diffused Type SCR Power Mini Mold 03P2J Features High Anode to Cathode Voltage:VDRM:VRRM=200V 1 GATE 2 ANODE 3 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRSM 300 V Non- Repetitive Peak -off Voltage VDSM
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03P2J
HBT169M
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors BT136 TRIAC TO-220-3L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-220-3L
BT136
O-220-3L
PAK/TO-220
100mA
BT136
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Thyristors BT136S TRIAC TO-252-2L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-252-2L
BT136S
O-252-2L
PAK/TO-220
100mA
BT136
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Thyristors BT136S TRIAC TO-252-2L MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-252-2L
BT136S
O-252-2L
PAK/TO-220
100mA
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bt136 triac
Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-220
BT136
O-220
PAK/TO-220
100mA
BT136
bt136 triac
TRIAC bt136
Thyristor BT136
BT136 motor
equivalent for TRIAC BT136
bt136triac
Thyristor to220
triac to-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-220
BT136
O-220
PAK/TO-220
100mA
BT136
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
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O-220
BT136
O-220
PAK/TO-220
100mA
BT136
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristors TO-220 BTB06 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 6 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION Suitable for AC switching operations, the BTB06 series can be used as
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O-220
O-220
BTB06
500mA
BTB06
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CR5AS-12
Abstract: IGT200
Text: CR5AS-12 Thyristor Medium Power Use REJ03G0345-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 5 A • VDRM : 600 V • IGT : 200 µA • Non-Insulated Type • Glass Passivation Type Outline MP-3A 4 2, 4 3 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode Applications
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CR5AS-12
REJ03G0345-0100
CR5AS-12
IGT200
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REJ03G0350-0100
Abstract: CR12CM-12 CR12CM-12A CR12CM-12A-A8
Text: CR12CM-12 Thyristor Medium Power Use REJ03G0350-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline TO-220 4 2, 4 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 12 3 Applications
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CR12CM-12
REJ03G0350-0100
O-220
REJ03G0350-0100
CR12CM-12
CR12CM-12A
CR12CM-12A-A8
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"mos controlled thyristor"
Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability
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MCTV65P100F1,
MCTA65P100F1
O-247
-1000V
150oC
MO-093AA
O-218)
"mos controlled thyristor"
MOS Controlled Thyristor
MCTA65P100F1
1000V MCT
M65P100F1
MCTV65P100F1
MCT thyristor
MCT thyristor 1000v
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Untitled
Abstract: No abstract text available
Text: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications
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CR05AS-8
REJ03G0348-0100
OT-89
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors TO-220-3L BTB12 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 12 A 3. GATE VDRM/VRRM 600 V IGT(Q1) 5 to 50 mA DESCRIPTION The BTA/BTB12 and T12 triac series is suitable for general purpose AC
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O-220-3L
O-220-3L
BTB12
BTA/BTB12
500mA
BTB12
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Untitled
Abstract: No abstract text available
Text: FCR100-6 Description Mechanical Dimensions TO-92 1 2 1. CATHODE 2. GATE 3. ANODE 3 Feature: ．Sensitive gate trigger current. ．Driven directly with IC and MOS device. ．Feature proprietary, void-free glass passivate ．Designed for high volume, line-powered
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FCR100-6
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Untitled
Abstract: No abstract text available
Text: FCR150-8 Description Mechanical Dimensions TO-92 1 2 1. CATHODE 2. GATE 3. ANODE 3 Feature: ．Sensitive gate trigger current. ．Driven directly with IC and MOS device. ．Feature proprietary, void-free glass passivate ．Designed for high volume, line-powered
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FCR150-8
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MCR100-6
Abstract: MCR100-8 mcr100-6 p mcr100 MCR1006 "Silicon Controlled Rectifiers" MCR100-6 Datasheet transistor mcr100-6 MCR100 8 mcr-100
Text: MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead Pb -Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8
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MCR100-6/MCR100-8
MCR100-6
MCR100-8
30-Jan-07
270TYP
MCR100-6
MCR100-8
mcr100-6 p
mcr100
MCR1006
"Silicon Controlled Rectifiers"
MCR100-6 Datasheet
transistor mcr100-6
MCR100 8
mcr-100
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors BTB04 TO-220-3L TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit IT RMS 4 A VDRM/VRRM BTB04-400 BTB04-600 400 600 5 to 25 IGT 3. GATE V mA DESCRIPTION The BTB04 triac family are high performance glass passivated PNPN devices.These parts are suitables
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O-220-3L
BTB04
O-220-3L
BTB04-400
BTB04-600
BTB04
100mA
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Unijunction
Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
Text: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N
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2N6027
2N602S
2N6116
2N6117
2N6118
2N6137
2n6116
2n6117
2n6118
Unijunction
Programmable unijunction
PUT 2N6027
PUT Oscillator 2n6027
thyristor applications
2n6027 die
2N6027/2N6028
thyristor scr oscillator circuit
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NTE308
Abstract: NTE310
Text: SILICON GATE CONTROLLED SWITCH GATE TURN-OFF THYRISTOR Maximum Ratings NTE Type No. 276 Description and Application SCR, Gate Turn Off TV Application Repetitive Peak Forward Off-State Voltage (Volts) On-State Anode Current (Amps) Surge On-State Current (Amps)
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NTE308
NTE310
b431E5^
GDD35Ã
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Untitled
Abstract: No abstract text available
Text: OIXYS CS 20 Phase Control Thyristor v RRM = 1200-1600 V ^T RMS ” 30 A *T(AV)M = TO-247 AD Type CS 20-12io1 CS 20-14io1 CS 20-16io1 1200 1400 1600 1200 1400 1600 1 9 A C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test Conditions ^T(RMS) T"vj ^T(AV)M
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O-247
20-12io1
20-14io1
20-16io1
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CS thyristor
Abstract: No abstract text available
Text: □IXYS Phase Control Thyristor CS 20 iT RMS TRMS = 30 A ^TAVM = 1 9 A VRRM = 1 2 0 0 -1600 V TO-247 AD Type 1200 1400 1600 CS 20-12ÌO1 CS 20-14io1 CS 20-16io1 1200 1400 1600 C = Cathode, A = Anode, G = Gate TAB = Anode Symbol Test C onditions ^TRMS T VJ ~ T "Vj M
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O-247
20-16io1
O-247
CS thyristor
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