Untitled
Abstract: No abstract text available
Text: New Quad 1W BTL Audio Power IC AN7514SH • Overview Unit : mm 14.00±0.10 6.90 (1.00) (5.65) 0.60±0.05 (3.70) 6.10±0.10 8.10±0.20 29 56 (2.45) 0 ~ 8° 0.50±0.10 0.10 ● Minimum external components. • Built-in output oscillation prevention capacitor and resistor.
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AN7514SH
AN7514SH
20max.
10kHz
100Hz
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Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or
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Untitled
Abstract: No abstract text available
Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB070AN06A0
FDP070AN06A0
O-220AB
O-263AB
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Untitled
Abstract: No abstract text available
Text: FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5mΩ D D Features Typ rDS on = 5.5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G Qualified to AEC Q101 TO-263 FDB SERIES Applications
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FDB075N15A
O-263
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FDD8870
Abstract: FDU8870 M038 FDD8870-F085
Text: FDD8870_F085 / FDU8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-252
O-252)
O-251AA)
F085/FDU8870
M038
FDD8870-F085
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FDB8442
Abstract: FDB8442-F085
Text: FDB8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 2.9mΩ Applications Typ rDS on = 2.1mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 181nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8442
181nC
FDB8442-F085
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FDD5810-F085
Abstract: FDD5810 FDD5810_F085
Text: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications RDS ON = 22m: Typ.), VGS = 5V, ID = 29A Motor / Body Load Control Qg(5) = 13nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management
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FDD5810
O-252
O-252)
FDD5810-F085
FDD5810_F085
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FDP8442
Abstract: No abstract text available
Text: FDP8442_F085 N-Channel PowerTrench MOSFET 40V, 80A, 3.1mΩ Applications Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 181nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDP8442
181nC
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TC11E
Abstract: 19E-9 FDP8870 RS21E
Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
O-220AB
TC11E
19E-9
RS21E
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FDB8444
Abstract: No abstract text available
Text: FDB8444_F085 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 91nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8444
O-263AB
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FDP047AN
Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
144oC,
FDH047AN08A0
FDP047AN
FDH047AN08
FDH047AN
FDP047
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C7 MARKING Fairchild
Abstract: No abstract text available
Text: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDM3622
C7 MARKING Fairchild
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fds8878
Abstract: No abstract text available
Text: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8878
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Untitled
Abstract: No abstract text available
Text: FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDB8870
O-263AB
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d 42030 transistor
Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A
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BUT11/11A
O-220
BUT11
BUT11A
BUT11
AN-758:
AN-758
d 42030 transistor
AN-7505
220v ac to 48v dc smps
AN3008 Fairchild
crt horizontal deflection circuit
AN-7528
9019 transistor
FAN6800
BUT11A spice
AN817
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Untitled
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
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Untitled
Abstract: No abstract text available
Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDP8880
FDB8880
FDB8880
O-263AB
O-220AB
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19E-9
Abstract: No abstract text available
Text: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
O-220AB
19E-9
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FDB16AN08A0
Abstract: FDP16AN08A0 260uH
Text: FDP16AN08A0 / FDB16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 58A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 58A • 42V Automotive Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge
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FDP16AN08A0
FDB16AN08A0
O-220AB
O-263AB
FDB16AN08A0
260uH
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Untitled
Abstract: No abstract text available
Text: FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3682
O-220
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Untitled
Abstract: No abstract text available
Text: FDP16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP16AN08A0
O-220
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FDD2582
Abstract: m067 82855
Text: N-Channel PowerTrench MOSFET 150V, 21A, 66mΩ Features Applications • r DS ON = 58mΩ (Typ.), VGS = 10V, ID = 7A • DC/DC converters and Off-Line UPS • Qg(tot) = 19nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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O-252AA
FDD2582
m067
82855
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FDP3682
Abstract: FDB3682 TO-263 Package
Text: N-Channel PowerTrench MOSFET 100V, 32A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 32A • DC/DC converters and Off-Line UPS • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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O-263AB
O-220AB
FDP3682
FDB3682
TO-263 Package
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FDP2552
Abstract: FDB2552 25E5 tube marking m062 25E5
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2552
FDP2552
O-220AB
O-263AB
FDP2552
25E5 tube
marking m062
25E5
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