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    AN1384 Search Results

    AN1384 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN1384 STMicroelectronics HANDLING TRAPS WITH THE ST120 CORE-2001-11-30 Original PDF

    AN1384 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62126EV30

    Abstract: CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30
    Text: Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL® SRAMs Software Version: None Associated Application Notes: None Application Note Abstract


    Original     		PDF AN13842 AN13842. CY62126EV30) CY62136EV30, CY62137EV30, CY62136FV30, CY62137FV30, CY62137FV18) CY62146E, CY62146EV30, CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30

    SMD TRANSISTOR LIST

    Abstract: smd transistor 2p data SMD d5 sot89 DCT20EFD zener smd diode 1w transistor smd list SMD TRANSISTOR D2 SMD TRANSISTOR fet DIODE SMD 10A zener smd diode 16v 1w
    Text: ISL6841EVAL3Z Evaluation Board for General Purpose Industrial Applications Application Note February 12, 2008 AN1384.0 Choice of PWM Controller Target Design Specifications The ISL684x family of devices are superior performing pin compatible replacements for the industry standard 384x


    Original     		PDF ISL6841EVAL3Z AN1384 ISL684x ISL6841 200kHz. 18VDC 30VDC. pISL6841EVAL3Z SMD TRANSISTOR LIST smd transistor 2p data SMD d5 sot89 DCT20EFD zener smd diode 1w transistor smd list SMD TRANSISTOR D2 SMD TRANSISTOR fet DIODE SMD 10A zener smd diode 16v 1w

    NLMS Algorithm

    Abstract: AN1384 ST120
    Text: AN1384 APPLICATION NOTE Implementing an Acoustic Echo Canceller Algorithm using the ST120DSP By Aude ANDOLFATTO 1 - INTRODUCTION This application note describes an Acoustic Echo Canceller 16 bits, 8KHz, 256ms implementation on the ST120 DSP. The first chapter presents the general principle of an AEC based on the NLMS (Normalized


    Original     		PDF AN1384 ST120DSP 256ms) ST120 NLMS Algorithm AN1384

    CY62157EV30

    Abstract: 90 nm CMOS CY62147EV18 CY62147EV30 CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30
    Text: Clarification on Byte Enable Operation in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL SRAMs GET FREE SAMPLES HERE Software Version: None Associated Application Notes: None


    Original     		PDF AN13842 CY62126EV30) CY62136EV30, CY62137EV30, CY62136FV30, CY62137FV30, CY62137FV18) CY62146E, CY62146EV30, CY62147EV30, CY62157EV30 90 nm CMOS CY62147EV18 CY62147EV30 CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30

    Untitled

    Abstract: No abstract text available
    Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A


    Original     		PDF CY62136EV30 CY62136CV30

    CY62137EV30

    Abstract: No abstract text available
    Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62137EV30 CY62137CV30 48-ball 44-pin

    AN1064

    Abstract: CY62167E 1M x 16 SRAM
    Text: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)


    Original     		PDF CY62167E 16-Mbit AN1064 1M x 16 SRAM

    00107

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin 00107

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball

    CY62157EV30LL-45BVXI

    Abstract: TSOP 48 thermal resistance
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 I/O15) CY62157EV30LL-45BVXI TSOP 48 thermal resistance

    55BV

    Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
    Text: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is


    Original     		PDF CY62167EV18 16-Mbit 55BV AN1064 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL

    AN1064

    Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
    Text: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 CY62126EV30 AN1064 CY62126DV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL 2 Mbit 128K x 16 Static RAM Features • automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		PDF CY62136FV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output


    Original     		PDF CY62157EV18 CY62157DV18 CY62157DV20 48-ball I/O15)

    2VCC-02

    Abstract: No abstract text available
    Text: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62137FV18 CY62137CV18 48-Ball 2VCC-02

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1


    Original     		PDF CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,


    Original     		PDF CY62137FV30 CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62147EV18 CY62147DV18 48-ball

    AN1064

    Abstract: CY62137EV30 CY62137FV30 CY62137FV30LL CY62137V
    Text: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing


    Original     		PDF CY62137FV30 AN1064 CY62137EV30 CY62137FV30LL CY62137V

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62126EV30 CY62126DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62147EV18 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		PDF CY62147EV18 I/O15)