D7343-31
Abstract: T543 T543B107
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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T543B107
Abstract: No abstract text available
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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T543B107
Abstract: No abstract text available
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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T543V227
Abstract: T543D565 T543X476 T543X107 T543A106 kemetcapacitors PA 66 GF 15 T543 T543B107
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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T543X106
Abstract: T543B107
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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LT3973-3.3
Abstract: T543 T543B107 LT3971-3.3
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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T543B107
Abstract: No abstract text available
Text: KEMET Organic Capacitor KO-CAP T543 Series Polymer Tantalum COTS Overview The KEMET Organic Capacitor is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel/P-channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. (N-ch) : 0.110Ω(MAX.) (P-ch) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP135A1145SR is an N-channel/P-channel Power MOS
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XP135A1145SR
XP135A1145SR
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capacitors 3HX
Abstract: 1008CS-220XMBC ABA-53563 ABA-51563 ABA-52563 sot363 aba DASF009456 ABA SURFACE MOUNT aba sot
Text: ABA-53563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1347 GND 2 Input Output & Vcc 3Hx GND 1 Introduction Avago Technologies’ ABA-53563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing
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ABA-53563
ABA-53563
SC-70
OT-363)
ABA-53563,
5988-9196EN
5988-9466EN
capacitors 3HX
1008CS-220XMBC
ABA-51563
ABA-52563
sot363 aba
DASF009456
ABA SURFACE MOUNT
aba sot
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1008CS-220XMBC
Abstract: ABA-51563 ABA-52563 ABA-53563 53563 18 sot-363 rf power amplifier sot363 aba Agilent ABA-53563
Text: Agilent ABA-53563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1347 GND 2 Input Introduction Agilent Technologies’ ABA-53563 is a low current silicon gain block RFIC amplifier housed in a 6 lead SC-70 SOT-363 surface mount plastic package. Providing a
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ABA-53563
SC-70
OT-363)
ABA-53563
5988-9196EN
5988-9466EN
1008CS-220XMBC
ABA-51563
ABA-52563
53563
18 sot-363 rf power amplifier
sot363 aba
Agilent ABA-53563
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PAL 007
Abstract: No abstract text available
Text: SÌE D NAPC/ SIGNETICS Signetics • bbS 3T S4 QG54QM0 1 ■ I PLC16V8-25/-35 Erasable and OTP Universal PAL -type Devices Application Specific Products • Series 20 FEATURES • 20-pln Universal Programmable Array Logic • High-speed CMOS EPROM cell technology
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QG54QM0
PLC16V8-25/-35
20-pln
and70
20-PIN
MS-001-AE
SM-1B82.
PAL 007
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39V18
Abstract: GAL39V18 Signal Path Designer
Text: NATL SEMICOND MEMORY 31E J> bSOHEb 00fcj4244 k U National Semiconductor GAL39V18 Generic Array Logic General Description Features Using a high performance E2CMOS technology, National Semiconductor has produced a next-generation program mable logic device, the GAL 39V18. Having an FPLA archi
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00fcj4244
GAL39V18
GAL39V18
39V18.
24pin,
300-mil
TL/L/10002-12
39V18
Signal Path Designer
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atmel 748
Abstract: ATMEL 744 44-JLCC ATV2500H-30DM ATV2500-30LC ATV2500 VPP ATV2500 ATV2500-40 ATV2500-35DC ATV2500-35KI
Text: ATMEL CORP ETE D 10 7 4 1 7 7 O Q O l l S Ì 7 • mmm ÀTV2500/H T 'W Features • Third Generation Program m able Logic Structure E a sily A chie ve s Gate Utilization Factors of 8 0 % • Increased Lo gic Flexibility 86 Inputs and 72 S u m Term s • Flexible Output M acrocell
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ATV2500)
ATV2500H-35DM
ATV2500H-35KM
ATV2500H-35LM
40DW6
ATV2500/H
107M177
T-46-13-47
ATV250Ã
atmel 748
ATMEL 744
44-JLCC
ATV2500H-30DM
ATV2500-30LC
ATV2500 VPP
ATV2500
ATV2500-40
ATV2500-35DC
ATV2500-35KI
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SC35D
Abstract: No abstract text available
Text: >4M C C PENTIUM A PPLICA TIO N NOTE Clock Design In Intel Pentium Processor Systems using the SC3508 M.K. Williams Owner/Principal Consultant Amherst Systems Associates 1. INTRODUCTION The Pentium processor is the latest, high-perfor mance entry In the X86 microprocessor family
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SC3508
66-MHz
64-bit
SC35D
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0249t
Abstract: Intel Pentium 66MHz 1993
Text: jO MCC PENTIUM APPLICATION NOTE C lock D esign in Intel Pentium P rocessor System s using the SC3508 The purpose of this application note is to clearly illustrate an approach to the design of the sys tem clock for the Pentium using the AMCC SC3508. We will methodically work through a
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SC3508
SC3508.
0249t
Intel Pentium 66MHz 1993
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PAL16R4A-2
Abstract: No abstract text available
Text: NATL SEMICOND MEMORY b S O l l E b OQbMDIti b 31E D Programmable Array Logic (PAL ) 20-Pin Medium PAL Famiiy General Description The 20-pin Medium PAL family contains four of the most popular PAL architectures used in industry. National Semi conductor's advanced Schottky TTL process with titanium
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20-Pin
S0112b
T-46-13-47
-PAL16L8
hSD112b
00b4117
PAL16R4A-2
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Untitled
Abstract: No abstract text available
Text: rjw vü TECHNOLOGY 111121-5 Micropower Low Dropout Regulator A p ril 1992 K fìT U R C S DCSCAIPTION • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1121-5 is a Micropower Low Dropout Regulator with shutdown. The device is capable of supplying over 150 milliamps of output current with a dropout voltage of 0.4V
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LT1121-5
150mA
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Untitled
Abstract: No abstract text available
Text: MA78M24QB 3-Terminal Positive Voltage Regulator A Schlum berger C o m p any M IL-STD-883 Ju ly 1986 — Rev 25 A ero sp ace and Defense Data Sheet _ Linear Products_ Description T he /JA78M 24Q B 3-Term inal Medium Current Positive V olt
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MA78M24QB
IL-STD-883
/JA78M
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Untitled
Abstract: No abstract text available
Text: E jâiS /IA78M24QB 3-Terminal Positive Voltage Regulator SaiLS A Schlum berger Com pany MIL-STD-883 July 1986 — Rev 25 Aerospace and Defense Data Sheet _ Linear Products_ Connection Diagram 3-Lead TO-39 Can
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MIL-STD-883
MA78M24QB
pA78M24QB
juA78M24QB
EQ00670F
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5962-8605301LX
Abstract: AMPAL22V10PC AMPAL22V10 CD3024 PD3024 5962-86053013X 527Q
Text: ADV MICRO P LA /P LE/ARR AY S dË J 055 752 b 0057310 1 T 'Y é '/3 - * /? AmPAL22V10 24-Pin IMOX Programmable Array Logic PAL Distinctive Characteristics • Second-generation PAL device architecture • • • • Increased logic power — up to 22 inputs and 10 outputs
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0H575Hb
AmPAL22V10
24-Pin
28-pin
02S75Sfc.
T-46-13-47
5-27Q
5962-8605301LX
AMPAL22V10PC
CD3024
PD3024
5962-86053013X
527Q
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textool socket dil 40
Abstract: 30A27 47 16L xn PAL 007 B MO-C47AA textool socket dil 24 c16v8 PLC16V8-25 PAL 007 E 16H8
Text: a^E D NAPC/ SIGNETICS • bbS3TS4 QGSMQMO 1 ■ T~*U>- 3rH7 c Signetics PLC16V8-25/-35 Erasable and OTP Universal PALMype Devices Signetics Programmable Logic Product Specification Application Specific Products • Series 20 FEATURES • 20-pln Universal Programmable
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20-pln
300mil-wide
20-PIN
textool socket dil 40
30A27
47 16L xn
PAL 007 B
MO-C47AA
textool socket dil 24
c16v8
PLC16V8-25
PAL 007 E
16H8
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ske V04
Abstract: No abstract text available
Text: SEEö TECHNO LO GY IN C I TE D • Ö11T233 QGG2Sb7 4 ■ EEPLD 20 RA 10Z T - 4 b - t^ - m November 1989 Features ■ CMOS EEPLD with Zero Standby Power: • 10 pA Typical, 150 pA Maximum ■ Operating Power Rises at Less Than ■ ■ ■ ■ ■ 100 Reprogramming Cycles, Minimum
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11T233
20RA10Z
400065m
ske V04
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MJ300
Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
Text: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE | ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series
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MJ300AV100/D
317ES4
MJ300
MK145BP,
MJ300AV100
mj300av100
equivalent of transistor D 2331
diode l 0607 ip rating
4221 motorola transistor
diode l 0607
max4283
SC3662
MJ300A
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i251
Abstract: ECL10KH PAL10H20P8
Text: ADV MICRO PLA/PI.E/AR5AYS 1 t 5 E § ;1M7S5L ml27itMM t , T -4 6 -1 3 -4 ? P A L I0H20P8 Combinatorial EC L PAL Device Ordering Information Features/Benefits • 20 logic Inputs: 12 external, 8 feedback PAL10H20P8 NS STO • 8 outputs with programmable polarity
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05S7SSb
T-46-13-4?
PALI0H20P8
24-pln
28-pln
ECL10KH-
PAL10H20P8
i251
ECL10KH
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