Untitled
Abstract: No abstract text available
Text: Power Management Group RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-120-5/15T 50 Watts Total Power +5Vdc±15Vdc Triple Output Microsemi Power Management Group PMG multiple decades of fault free heritage complex custom (radiation hardened) switching power design and systems
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SA50-120-5/15T
15Vdc
100kRad
SA50-120-5-15T
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watt, DCS/PCS Band PTF 102098* Description Key Features The PTF 102098 is a 90–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P-1dB and 14.5 dB linear gain. Full gold metallization
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PCD1287CT
P220ECT
1-877-GOLDMOS
1522-PTF
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Amp. mosfet 1000 watt
Abstract: transformer less power supply 12 volt 3A 1000 watt ferrite transformer mathcad flyback design Amp. mosfet 500 watt mosfet 1000 amper transistor m 9587 Diode fast 8 amper RM6S/CSVS-RM6S/LP-1S-8P Switchmode power supply handbook
Text: SWITCHING POWER SUPPLY DESIGN: CONTINUOUS MODE FLYBACK CONVERTER Written by Michele Sclocchi [email protected] Application Engineer National Semiconductor Typical Flyback power supply: D4 N=18T C10 220p R5 10 16V D2 R1 49.9K N=6T D5 D3 Q1 20 - 55V N=18T
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LM5000-3
1000p
LM5000
50kHz
Amp. mosfet 1000 watt
transformer less power supply 12 volt 3A
1000 watt ferrite transformer
mathcad flyback design
Amp. mosfet 500 watt
mosfet 1000 amper
transistor m 9587
Diode fast 8 amper
RM6S/CSVS-RM6S/LP-1S-8P
Switchmode power supply handbook
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transistor 603
Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at
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SLD-2083CZ
SLD-2083CZ
2700MHz.
EDS-103754
RF083
transistor 603
transistor smd 303
circuit diagram of rfid gate
SLD-2083
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transistor smd 303
Abstract: LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd SLD-2083CZ
Text: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at
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SLD-2083CZ
SLD-2083CZ
2700MHz.
EDS-103754
RF083
transistor smd 303
LL1608-F4N7K
CONNECTOR SMA 905 drawing
SLD-2083
0603CS delta
LL1608-F2N7S
80021
Amp. 100 watt fet
pot 100K smd
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SLD-2083CZ
Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz
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SLD-2083CZ
RF083
SLD-2083CZ
SLD2083CZ
600S120FT250XT
600S6R8BT250XT
0603CS-16NXJB
0603CS-1N6XJB
0603CS-4N7XJB
915 MHz RFID
GaN Bias 25 watt
j20 Schematic
InP transistor HEMT
transistor BJT Driver
smd transistor ne c2
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SLD-1083CZ
Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Text: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features 4 Watt Output P1dB Single Polarity Supply Voltage
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SLD-1083CZ
RF083
SLD-1083CZ
SLD1083CZ
600S680JT250XT
T494D106M035AS
ECJ2YB1H104K
ERJ-3EKF3240V
ERJ6GEY0R00V
GaN Bias 25 watt
InP transistor HEMT
600S680JT250XT
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4712 mosfet
Abstract: Amp. mosfet 500 watt 50 Amp 100 volt mosfet 300 watt mosfet amplifier mosfet 4712 switching power supply design 50 Watt MOSFET amplifier mathcad buck INDUCTOR DESIGN AN-1197 LM5642
Text: SWITCHING POWER SUPPLY DESIGN: PWM Current Mode, Dual Synchronous Buck Converter: LM5642 Michele Sclocchi [email protected] National Semiconductor Notes: Write down the power supply requirements on : Get the results on: Xxx := Rsults xx := This Mathcad file helps the calculation of the external components dual synchronous buck
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LM5642
LM5642
LM2633
AN-1292
AN-1197
4712 mosfet
Amp. mosfet 500 watt
50 Amp 100 volt mosfet
300 watt mosfet amplifier
mosfet 4712
switching power supply design
50 Watt MOSFET amplifier
mathcad buck INDUCTOR DESIGN
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SLD3091FZ
Abstract: T85 55
Text: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 1600MHz. It is an
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SLD-3091FZ
SLD-3091FZ
1600MHz.
30reliminary
EDS-104668
SLD3091FZ
T85 55
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915 MHz RFID
Abstract: 22UF 27PF SLD-3091FZ t85 key SLD3091FZ SLD3091
Text: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an
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SLD-3091FZ
SLD-3091FZ
2200MHz.
EDS-104668
915 MHz RFID
22UF
27PF
t85 key
SLD3091FZ
SLD3091
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 180 Watts, 2110-2170 MHz PTF 102022* Description Key Features The PTF 102022 is a 180–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. A laterally double-diffused push-pull FET, it operates with 13.5 dB linear gain. Full gold metallization
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1-877-GOLDMOS
1522-PTF
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SLD-3091FZ
Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Text: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features 30 Watt Output P1dB
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SLD-3091FZ
SLD-3091FZ
EDS-104668
SLD3091FZ
GaN Bias 25 watt
InP transistor HEMT
915 MHz RFID
27PF
A191
22UF
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Untitled
Abstract: No abstract text available
Text: SA50-28 Triple Series RADIATION HARDENED ISOLATED DC/DC CONVERTERS SA50-28-5-15T 50 Watts Total Power 5V, +/- 12Vdc, Triple Output DESCRIPTION The SA series of DC-DC converters are designed for the rigors of space, characterized for Total Ionizing Dose and Single Event Effects. Operating at a fixed frequency of 220
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SA50-28
SA50-28-5-15T
12Vdc,
100kRad
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ad6451
Abstract: SO108
Text: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package
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OPA-111
OPA-121
AD645
AD645
3500ppm/
C1398a
ad6451
SO108
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Untitled
Abstract: No abstract text available
Text: BACK a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package
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OPA-111
OPA-121
AD645
AD645
3500ppm/
C1398a
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Q81, 1K, 3500 ppm
Abstract: c1398 op amp ad645 AD645JN 8c 617 transistor AD645 AD645A AD645B AD645C AD645J
Text: a Low Noise, Low Drift FET Op Amp AD645 FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 V p-p max, 0.1 Hz to 10 Hz 10 nV/√Hz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS TO-99 H Package
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AD645
OPA-111
OPA-121
AD645
Q81, 1K, 3500 ppm
c1398
op amp ad645
AD645JN
8c 617 transistor
AD645A
AD645B
AD645C
AD645J
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MYXJ11200-34CAB
Abstract: silicon carbide
Text: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge
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MYXJ11200-34CAB
MIL-PRF-19500
MYXJ11200-34CAB
silicon carbide
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 45 Watts, 2110-2170 MHz Description Key Features The PTF 102088 is a 45–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110-2170 MHz. This device typically operates at 47% efficiency at P-1dB with a linear gain of
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84MHz,
10MHz
15MHz
480mA,
14GHz
1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ Low Power, Low Noise Precision FET Op Amp AD795 FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op Amp and Tl TLC 2201 Low Noise 2.5 JiV p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 0.6 fA /V H z at 1 kHz High DC Accuracy
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AD795
OPA-111,
OPA-121
AD796
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AD796
Abstract: 7915 pin configuration AD795 AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin
Text: ANALOG DEVICES INC 51E » A N A LO G D E V IC E S OaibfiOO 0Q3bl32 b4b • ANA Low Power, Low Noise Precision FET Op Amp AD795 □ FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op A m p and Tl TLC 2201 Low Noise 2.5 JiV p -p m ax, 0.1 Hz to 10 Hz
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003fc
AD795
OPA-111,
OPA-121
AD796
7915 pin configuration
AD795K
AD79S
AD795B
AD795BH
AD795AH
Q81, 1K, 3500 ppm
2265 8pin
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AD796
Abstract: AD796AN
Text: ANALOG DEVICES □ Dual Low Power, Low Cost, Precision FET Op Amp AD796 FEATURES Low Noise 2.5 jj.V p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 14 fA p-p Current Noise 0.1 Hz to 10 Hz High DC Accuracy 300 n.V max Offset Voltage 3 jlV / ° C max Drift
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AD796
AD796
AD796AN
AD796BN
AD796AR
AD796SQ-883B
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Untitled
Abstract: No abstract text available
Text: Low Noise, Low Drift FET Op Amp ANALOG DEVICES FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 |iV p-p max, 0.1 Hz to 10 Hz 10 n V /V fiz max at 10 kHz 11 fA p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS 8-Pin Plastic Mini-DIP
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OCR Scan
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OPA-111
OPA-121
MIL-STD-883B
AD645
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Untitled
Abstract: No abstract text available
Text: Low Noise, Low Drift FET Op Amp ANALOG DEVICES FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 |¿V p -p max, 0.1 Hz to 10 Hz 10 n V /V fiz max at 10 kHz 11 f A p-p Current Noise 0.1 Hz to 10 Hz CONNECTION DIAGRAMS 8-Pio Plastic Mini-DIP
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OPA-111
OPA-121
MIL-STD-883B
AD645
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