Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
|
Original
|
PDF
|
NESG3033M14
NESG3032M14.
NESG3033M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
|
Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3032M14 Data Sheet R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG3032M14
R09DS0048EJ0300
NESG3032M14
NESG3032M14-A
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG3033M14
NESG3033M14
NESG3032M14.
R09DS0049EJ0300
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
|
NESG3033M14-T3
Abstract: MCR01MZPJ5R1 NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3-A GRM1552C1H GRM155B11H GRM1552C1H270J
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
FDK 004
Abstract: AML1005H1N5STS
Text: MD-MDE001-0709 AML1005H ELECTRICAL CHARACTERISTICS Q Min Part number L[nH] Toler 100MHz -ance DC Q Typ S.R.F. Rated Resistance 100 100 800 1000 2000 [MHz] [MHz] [MHz] [MHz] [MHz] [MHz] current [ohm] Typ [mA] Typ AML1005H1N0STS 1.0 S 8 10 30 35 46 >10000 0.04
|
Original
|
PDF
|
MD-MDE001-0709
AML1005H
100MHz
AML1005H1N0STS
AML1005H1N2STS
AML1005H1N5STS
AML1005H1N8STS
AML1005H2N2STS
AML1005H2N7STS
AML1005H3N3STS
FDK 004
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG3033M14
R09DS0049EJ0300
NESG3033M14
NESG3032M14.
NESG3033M14-A
|
GRM155B11H102KA01
Abstract: NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A FDK 1575 AML1005H3N9STS
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
NESG3033M14
NESG3032M14
PU10640JJ02V0DS
M8E02
GRM155B11H102KA01
NESG3033M14
AML1005H5N6STS
NESG3032M14
NESG3033M14-A
NESG3033M14-T3
NESG3033M14-T3-A
FDK 1575
AML1005H3N9STS
|
NESG3033M14
Abstract: MCR01MZPJ5R6
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3033M14 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG3033M14
NESG3033M14
R09DS0049EJ0300
NESG3032M14.
NESG3033M14-A
MCR01MZPJ5R6
|
AML1005H
Abstract: 56N10 AML1005H10NJTS AML1005H56NJTS AML1005H1N0STS AML1005H1N5STS AML1005H18NJTS AML1005H2N2STS AML1005H82NJTS FDK 004
Text: MD-MDJ001-0709 AML1005H タイプ電気特性一覧 Q Min Part number L[nH] Toler 100MHz -ance DC Q Typ S.R.F. Rated Resistance 100 100 800 1000 2000 [MHz] [MHz] [MHz] [MHz] [MHz] [MHz] current [ohm] Typ [mA] Typ AML1005H1N0STS 1.0 S 8 10 30 35 46 >10000 0.04
|
Original
|
PDF
|
MD-MDJ001-0709
AML1005H
100MHz
AML1005H1N0STS
AML1005H1N2STS
AML1005H1N5STS
AML1005H1N8STS
AML1005H2N2STS
AML1005H2N7STS
AML1005H3N3STS
AML1005H
56N10
AML1005H10NJTS
AML1005H56NJTS
AML1005H18NJTS
AML1005H82NJTS
FDK 004
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG3032M14 R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification
|
Original
|
PDF
|
NESG3032M14
R09DS0048EJ0300
NESG3032M14
NESG3032M14-A
NESG3032M14-T3
NESG3032M14-T3-A
|