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Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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AM357039UM-2H
Abstract: No abstract text available
Text: Power Amplifier Module 3.5 – 7.0GHz, 21dB, 8W AM357039UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM357039UM-2H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 21dB small signal gain, and 39dBm 8W saturated output power
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AM357039UM-2H
AM357039UM-2H
39dBm
39dBm
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AM08011036UM-3H
Abstract: No abstract text available
Text: AM08011036UM-3H Power Amplifier Module 8.0 – 11.0GHz, 28dB, 4W February 2014 Rev1 DESCRIPTION AMCOM’s AM08011036UM-3H is a broadband GaAs MMIC power amplifier. It has 28dB small signal gain, and 36dBm 4W saturated output power over the 8.5 to 10.5GHz band.
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AM08011036UM-3H
AM08011036UM-3H
36dBm
11GHz
36dBm
300mA.
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AM357037UM-3H
Abstract: No abstract text available
Text: Power Amplifier Module 3.5 – 7.0GHz, 27dB, 5W AM357037UM-3H January 2014 Rev1 DESCRIPTION AMCOM’s AM357037UM-3H is a broadband GaAs Power Amplifier Module. It has a nominal CW performance of 27dB small signal gain, and 37dBm 5W saturated output power
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AM357037UM-3H
AM357037UM-3H
37dBm
37dBm
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AM343635SF-2H
Abstract: No abstract text available
Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.
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AM343635SF-2H
AM343635SF-2H
36dBm
36dBm
AM343635SF-
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Abstract: No abstract text available
Text: AM142540MM-BM-R November 2007 Rev. 6 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to
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AM142540MM-BM-R
AM142540MM-BM-R
40dBm)
AM132740MM-BM.
MMIC01
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Untitled
Abstract: No abstract text available
Text: AM030MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM030MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030MH4-BI-R
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15 GHz high power amplifier
Abstract: 8401 AMCOM Communications wireless AM131533SF-3H
Text: The RF Power House 1.3 - 1.5 GHz - 2 Watt Power Amplifier AM131533SF-3H DESCRIPTION AMCOM’s AM131533SF-3H is a 3-stage power amplifier in aluminum housing with input and output SMA connectors. It has 30dB gain, 33dBm output power over the 1.35 to 1.5 GHz Band.
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AM131533SF-3H
AM131533SF-3H
33dBm
33dBm
15 GHz high power amplifier
8401
AMCOM Communications
wireless
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AM010MH2-BI
Abstract: pt 4115 25302
Text: AM010MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM010MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM010MH2-BI
AM010MH2-BI
pt 4115
25302
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AM07511037UM-3H
Abstract: No abstract text available
Text: AM07511037UM-3H January 2014 Rev1 Power Amplifier Module 7.5 - 11.0GHz, 25dB, 5W DESCRIPTION AMCOM’s AM07511037UM-3H is a broadband GaAs power module. It has 25dB small signal gain, and 37dBm output power over the 7.5 to 11.0GHz band at 5V bias. Because of
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AM07511037UM-3H
AM07511037UM-3H
37dBm
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Untitled
Abstract: No abstract text available
Text: AM010MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM010MH4-BI-R
AM010MH4-BI-R
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Untitled
Abstract: No abstract text available
Text: AM254540WM-BM-R AM254540WM-FM-R April 2009 Preliminary DESCRIPTION AMCOM’s AM254540WM-BM-R and AM254540WM-FM-R are part of the GaAs HiFET MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at 10 - 13V. The input and
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AM254540WM-BM-R
AM254540WM-FM-R
AM254540WM-BM-R
AM254540WM-FM-R
40dBm)
AM254540WM-BM/FM-R
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PT 4115
Abstract: maximum gain s2p AM020
Text: AM020MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM020MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a
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AM020MH2-BI
AM020MH2-BI
AM02MH2-BI
270mA)
PT 4115
maximum gain s2p
AM020
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AM072239UM-2H
Abstract: No abstract text available
Text: Power Amplifier Module 700 – 2200MHz, 30dB, 8W AM072239UM-2H January 2014 Rev1 DESCRIPTION AMCOM’s AM072239UM-2H is a broadband GaAs Power Amplifier module. AM072240UM-2H is a wideband power amplifier designed for Wireless Internet Access, Wireless Local Loop, and Two Way Radio. It operates from 700 MHz
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2200MHz,
AM072239UM-2H
AM072239UM-2H
AM072240UM-2H
37dBm)
39dBm
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Untitled
Abstract: No abstract text available
Text: AM032MH4-BI-R HiFET High Voltage GaAs FET August 2007 Rev. 1 DESCRIPTION AMCOM’s AM032MH4-BI-R is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total
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AM032MH4-BI-R
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Power Amplifier MMIC 2.6 GHz
Abstract: MMIC
Text: The RF Power House GaAs MMIC Power Amplifier AM162633NM-BM DESCRIPTION AMCOM’s AM162633NM BM - is part of the GaAs MMIC power amplifier FEATURES series. It has 33dB gain and 33dBm output power over the 1.6 – 2.6 GHz • Wide bandwidth from 1.6 to 2.6 GHz
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AM162633NM-BM
AM162633NM
33dBm
33dBm
50-ohm
Power Amplifier MMIC 2.6 GHz
MMIC
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6 FMR 40
Abstract: No abstract text available
Text: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and
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AM011037WM-BM-R
AM011037WM-FM-R
AM011037WM-BM-R
AM011037WM-FM-R
38dBm)
AM011037WM-BM/FM-R
6 FMR 40
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Untitled
Abstract: No abstract text available
Text: AM030WH4-BI-R December 2008 Rev. 0 HiFET High Voltage GaAs FET DESCRIPTION AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030WH4-BI-R
AM030WH4-BI-R
300mA)
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AM030MH4-BI-R
Abstract: AM030MH4-BI
Text: AM030MH4-BI-R Aug 2010 Rev 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.
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AM030MH4-BI-R
AM030MH4-BI-R
AM030MH4-BI
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AM010MH4-BI-R
Abstract: No abstract text available
Text: AM010MH4-BI-R Aug 2010 Rev 2 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM010MH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications.
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AM010MH4-BI-R
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High voltage GaAs FET
Abstract: 37758 DC bias of gaas FET
Text: AM010MH4-BI HiFET High Voltage GaAs FET January 2003 Preliminary DESCRIPTION AMCOM’s AM010MH4-BI is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total
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AM010MH4-BI
AM010MH4-BI
High voltage GaAs FET
37758
DC bias of gaas FET
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AM030MH4-BI
Abstract: No abstract text available
Text: HiFET High Voltage GaAs FET AM030MH4-BI January 2003 Preliminary DESCRIPTION AMCOM’s AM030MH4-BI is part of the BH series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total
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AM030MH4-BI
AM030MH4-BI
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AM030WH4-BI-R
Abstract: No abstract text available
Text: AM030WH4-BI-R January 2011 REV 3 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM030WH4-BI-R is part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power, high linearity, and broadband applications. This
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AM030WH4-BI-R
AM030WH4-BI-R
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Untitled
Abstract: No abstract text available
Text: AM284233MM-BM January 2003 Rev. 0 DESCRIPTION AMCOM’s AM284233MM-BM is part of the GaAs MMIC power amplifier series. It has 36 dB gain, 32.5 dBm output power over the 2.8 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the
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AM284233MM-BM
AM284233MM-BM
50-ohm
1000mA,
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