MB834000
Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010
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MX27C256
i27C256
Am27C256
NM27C256
M27C256
MX27C512
i27C512
Am27C512
NM27C512
M27C512
MB834000
M5M23160
MB834100
MB838000
MB832000
SGS M27C256
I27C256
KM23C1010
M27C256
M27C256 intel
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atmel 24c16a
Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Text: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256
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\btl117
AM27C010
AM27C020
AM27C040
AM27C080
AM27C1024
AM27C128
AM27C2048
AM27C256
AM27C4096
atmel 24c16a
ST93C86
EPROM AMD
D87C257
atmel 93c66A
ATMEL 24c64
39SF512
D27128 NEC
P87LPC7648
GAL16AS
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AM27C512
Abstract: AM27C512-120
Text: FINAL Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 55 ns ■ High noise immunity ■ Low power consumption — 20 µA typical CMOS standby current
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Am27C512
28-pin
32-pin
KS000010
08140H-10
AM27C512-120
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AM27C512
Abstract: AM27C512-120 AM27C512-150 AM27C512-150DC
Text: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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PDF
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Am27C512
28-pin
32-pin
512-Kbit,
AM27C512-120
AM27C512-150
AM27C512-150DC
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Product Selector Guide
Abstract: No abstract text available
Text: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS n n Fast access time n — Speed options as fast as 55 ns Low power consumption n n n n n n Latch-up protected to 100 mA from –1 V to VCC + 1 V High noise immunity JEDEC-approved pinout
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Am27C512
28-pin
32-pin
512-Kbit,
Product Selector Guide
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AM27C512
Abstract: AM27C512-120 AM27C512-150 AM27C512-150DC Product Selector Guide
Text: FINAL Am27C512 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS n Fast access time n Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 55 ns n High noise immunity n Low power consumption n Versatile features for simple interfacing
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PDF
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Am27C512
28-pin
32-pin
512-Kbit,
AM27C512-120
AM27C512-150
AM27C512-150DC
Product Selector Guide
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Untitled
Abstract: No abstract text available
Text: Am27C512 65,536 X 8-Bit CMOS EPROM Am27C512 ADVANCE INFORMATION DISTINCTIVE CH A RACTERISTIC S • • • Fast a c c e s s time — 150 n s Low-power dissipation Both interactive and new Flashrite* programm ing algorithms available • • • • S in gle 5-volt power supply
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OCR Scan
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Am27C512
1C512-150
27C512-205
27C512-200
27C512
27C512-250
27C512-305
27C512-300
27C512-455
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices Am27C512 65,536 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns JEDEC-approved pinout Low power consum ption: jxA maximum standby current ± 1 0 % power supply tolerance -1 0 0 Fast Flashrlte programming
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OCR Scan
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PDF
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Am27C512
e--70ns
512K-bit,
80-009E
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IN3064
Abstract: No abstract text available
Text: a Preliminary Advanced Micro Devices Am27C512L 65,536 X 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ JEDEC-approved pinout - Plug in replacement fo r Am27C512 Fast access time—70ns Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz
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OCR Scan
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Am27C512L
Am27C512
512K-bit,
06780-009E
IN3064
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AM27C512
Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
Text: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
Tcyc-10
Tcyc-25
Am33C93A
AM27C512-120
AM27C512-150
AM27C512-200
AM27C512-255DC
ao,bh
am33c93
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AM27CS12-300
Abstract: AM27C512DC LS003312
Text: a Advaß Am27C512 65,536 x 8-Bit CMOS EPROM Devices DISTINCTIVE CHARACTERISTICS • • • Fast access time — 90 ns Low power consumption: - 100 mA maximum standby current Programming voltage: 12.5 V • • • • Single +5-V power supply JEDEC-approved pinout
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OCR Scan
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Am27C512
512K-bit,
WF021992
Am27C010
AM27CS12-300
AM27C512DC
LS003312
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d501ad
Abstract: No abstract text available
Text: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
27C512
Am33C93A
d501ad
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Untitled
Abstract: No abstract text available
Text: FINAL & Am27C512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 70 ns ■ Low power consumption — 20 |jA typical C M O S standby current
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
S000010
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Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 70 ns ■ Low power consumption ■ High noise immunity — 20 nA typical CMOS standby current
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OCR Scan
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PDF
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Am27C512
28-pln
32-pin
KS000010
|
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Untitled
Abstract: No abstract text available
Text: AMD3 Am27C512 512 Kilobit 64 K X 8-Bit CMOS EPRO DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity ■ Versatile features for simple interfacing — Speed options as fast as 55 ns
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
512-Kbit,
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AM27C512
Abstract: AM27C512-90DC 127C512
Text: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
KS000010
08140G-9
AM27C512-90DC
127C512
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eprom 27C512 28pin
Abstract: No abstract text available
Text: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption
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OCR Scan
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PDF
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Am27C512
28-pin
32-pin
512-Kbit,
27C512
eprom 27C512 28pin
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27C512 eprom
Abstract: No abstract text available
Text: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V F a s t a c c e s s tim e — 5 5 ns L o w p o w e r c o n s u m p tio n High noise immunity — 2 0 (iA typica l C M O S sta n d b y cu rent
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PDF
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Am27C512
28-pin
32-pin
27C512
KS000010
27C512 eprom
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current
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02S7SSÃ
Am27C512
512K-btt,
D0303Ã
AID27C512
T-46-13-29
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am27C512 eprom
Abstract: AM27C512-200 AM27C512-25O/BXA
Text: Advanced Micro Devices A m 2 7 C 5 1 2 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time V cc + 1 V — 70 ns ■ High noise Immunity ■ Low power consumption ■ Versatile features for simple interfacing
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OCR Scan
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28-pln
32-pln
Am27C512
KS000010
am27C512 eprom
AM27C512-200
AM27C512-25O/BXA
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Am27C512s
Abstract: AM27C512-155
Text: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current
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OCR Scan
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Q25752Ã
Am27C512
512K-bit,
CDV028
T-46-13-29
T-46-13-25
G2S75SÃ
CLV032
Am27C512s
AM27C512-155
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AM27C512
Abstract: AM27C512-120DC
Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current
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OCR Scan
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PDF
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303bfi
T-46-13-29
Am27C512
512K-bit,
D0303Ã
AIYI27C512
AM27C512-120DC
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AM27G512-200
Abstract: AM27G
Text: ADV MI CR O MEMORY 14E D | t - q 0 E S 7 S 2 Û 0 0 2 7 3 ^ 5 fl | u i ' ? , - Q A A m 2 7 C 5 1 2 Adva£ 65,536 x 8-Bit CMOS EPROM Devices D ISTIN CTIVE CH ARACTERISTICS • • • Fast access tim e — 90 ns Low power consumption; - 1 0 0 ¡th maximum standby current
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OCR Scan
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PDF
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Am27C512
512K-bit,
WF021992
27C010
AM27G512-200
AM27G
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Untitled
Abstract: No abstract text available
Text: FIN AL AMDZ1 A m 2 7 C 5 1 2 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 55 ns ■ Low power consumption
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OCR Scan
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PDF
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28-pin
32-pin
27C512
512-Kbit,
Am27C512
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