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    ALL TRANSISTOR 2N60 Search Results

    ALL TRANSISTOR 2N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ALL TRANSISTOR 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington Silicon Power Transistor Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON


    Original     		PDF 2N6056/D 2N6056

    2N6031 MOTOROLA

    Abstract: 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030
    Text: MOTOROLA Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630/D 2N5630 2N5631 2N6030 2N5630, 2N5631, 2N6031 2N6031 MOTOROLA 2N5630 2N5629 MOTOROLA MOTOROLA 2N6031 2n6029 2N6031 2N5629 MOTOROLA 2N5631 2N5631 2N6030

    2N6041

    Abstract: 2N6044 2n6041 motorola 1N582 2N6040-D 2N6044 MOTOROLA 1N5825 2N6040 2N6042 2N6043
    Text: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6040/D 2N6040 2N6042* 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6041 2N6044 2n6041 motorola 1N582 2N6040-D 2N6044 MOTOROLA 1N5825 2N6040 2N6042 2N6043

    2N6041 MOTOROLA

    Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
    Text: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6040/D 2N6040 2N6042* 2N6043 2N6045* 2N6040, 2N6041, 2N6044 2N6042, 2N6041 MOTOROLA 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application

    2N6055 MOTOROLA

    Abstract: Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6055 2N6056* Darlington Complementary Silicon Power Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6055/D 2N6055 2N6056* 2N6056 2N6055/D* 2N6055 MOTOROLA Darlington Silicon Power Transistor 10 amp npn darlington power transistors 2N6055 100 amp npn darlington power transistors 2N6056 2N6056 MOTOROLA POWER BIPOLAR JUNCTION TRANSISTOR power transistors 03 transistor

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


    Original     		PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —


    Original     		PDF 2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052

    TO-225AA

    Abstract: 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6030 2N6031
    Text: MOTOROLA Order this document by 2N6035/D SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications.


    Original     		PDF 2N6035/D 2N6030 2N6031 2N5630) 2N6035 2N6035, 2N6038 2N6036, 2N6039 225AA TO-225AA 2n6039 motorola 10 amp npn darlington power transistors Darlington Silicon Power Transistor darlington power transistor NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2N5630 2N6031

    1N5825

    Abstract: 2N6056 MSD6100
    Text: 2N6056 NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — • • http://onsemi.com hFE = 3000 Typ @ IC = 4.0 Adc


    Original     		PDF 2N6056 2N6056/D 1N5825 2N6056 MSD6100

    k 3683 transistor

    Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		PDF 2N6076 k 3683 transistor BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,


    Original     		PDF 2N3773/2N6099 2N3773/2N6099 QW-R205-001

    Transistor 2n6099

    Abstract: 2N3773 2N3773 transistor 2N3773 equivalent 2N6099 2N6609
    Text: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers,


    Original     		PDF 2N3773/2N6099 2N3773/2N6099 QW-R205-001 Transistor 2n6099 2N3773 2N3773 transistor 2N3773 equivalent 2N6099 2N6609

    transistor 725

    Abstract: 2N6058
    Text: 2N6058 80 V - Darlington Complementary NPN Selicon Power Transistor 7.25 Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6058 Online Store 2N6058 Diodes 80 V - Darlington Complementary N PN Selicon Power Transistors Transistor Integrated Circuits


    Original     		PDF 2N6058 2N6058 com/2n6058 transistor 725

    2N6256

    Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 260MHz rc-25 2SA777 770MHz, 2N6256 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081

    W 650 RC SIT

    Abstract: 2SD506 25X1 2SB589 TP2206 Transistor Manual TI805
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 Te-25 W 650 RC SIT 2SD506 25X1 2SB589 TP2206 Transistor Manual TI805

    Transistor 638 MOTOROLA

    Abstract: 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667
    Text: M OTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington S ilicon Power Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON


    OCR Scan     		PDF 2N6056/D Transistor 638 MOTOROLA 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667

    2N6059 MOTOROLA

    Abstract: 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —


    OCR Scan     		PDF 2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* Box5405, 2N6059 MOTOROLA 2N6058 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2 N 60 56 NPN D arlington Silicon Pow er Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON


    OCR Scan     		PDF 2N6056/D O-204AA

    2N6080

    Abstract: 2N6081 2N6084 2N6083
    Text: S G S-THOM SON _ _ DMC I 7 ^ 5 3 ? Q 0 Q D DT 7 SOLID STATE MICROWAVE 4 | _ D _7% ’ ?5l7 2N6080 2N6081 2N6082 2N6083 2N6084 : THOMSON-CSF COMPONENTS CORPORATION : MontgomeryviUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR


    OCR Scan     		PDF 2N6080 2N6081 2N6082 2N6083 2N6084 2N6084

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


    OCR Scan     		PDF 2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Com plem entary Silicon Plastic Power Transistors PNP 2N 61 07 . . . designed for use in general-purpose amplifier and switching applications. • • •


    OCR Scan     		PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6109* 2N6111, 2N6288 2N6109

    2n6052

    Abstract: 2N6058 MOTOROLA 2n6058
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —


    OCR Scan     		PDF 2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* O-204AA 2n6052 2N6058 MOTOROLA

    2n6057

    Abstract: 2N6050 2N6059 2N6058 2N6051 2N6057 MOTOROLA
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 60 50 D arlington C om plem entary Silicon Pow er Transistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —


    OCR Scan     		PDF 2N6050/D 2N6050, 2N6057 2N6058 2N6052, 2N6059 2N6059F O-204AA 2N6050 2N6051 2N6057 MOTOROLA