0.18-um
Abstract: free ieee paper on vlsi
Text: Semiconductor, Published in IEDM Technical DigestFreescale 2003 session 34 paper #6 Inc. A 0.18µm 4Mb Toggling MRAM M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo,
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421 infra
Abstract: No abstract text available
Text: Ausgabe O I M •d M on O L M Dleee Auegebe w u rde m it dam Softwere8yetem Fram eM aker* eretellL Thle edition wea reellzed ualng the eoftw ere ayetem F rim e M e k e r*. Herauegegeben von Siem ens AQ, ■ereleh H i lb lt t t t r , M arke tingK o m m u n ika tio n , BalanetreSe 71,
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SFH423
421 infra
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Untitled
Abstract: No abstract text available
Text: • bbSa'IBI 0DBS7TS S3fi « A P X N AKER PHILIPS/DISCRETE L.7E D _ _ PMBD 28 35 PMBD 28 36 J SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PMBD2835 and 2836 consist of two diodes in a microminiature plastic envelope. The anodes are
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PMBD2835
PMBD2835
PMBD2836
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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bbS3T31
QDE473T
BF991
OT143
OT103
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BGY22
Abstract: No abstract text available
Text: i , _ N AKER P H I L I P S / D I S C R E T E ObFl SFbbS3T31 0Di3534 T-74-09^01 BGY23 BGY23A _ / V U.H.F. POWER AMPLIFIER MODULES Broadband amplifier modules primarily designed for mobile applications operating directly from 12 V
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SFbbS3T31
0Di3534
T-74-09
BGY23
BGY23A
J-74-09-01
BGY22/23
BGY22A/23A
BGY22
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BY705
Abstract: BY706 sod61 brown
Text: I I N AKER PHILIPS/DISCRETE b=JE D bbSBTBl OGHbSlfl GOT A IAPX B Y /U 5 B Y706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EH T re c tifie r diodes in glass envelopes Intended fo r use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, th e diodes should be
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BY706
BY705
BY706
sod61 brown
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Untitled
Abstract: No abstract text available
Text: SIEMENS Components for Entertainment Electronics 2 Band TV Tuner TUA 6012, TUA 6014 Mixer-Oscillator-PLL Datasheet 1998-09-01 Edition 1998-09-01 T his e d itio n w a s re a lize d using th e s o ftw a re s yste m Fram eM aker Published by Siemens AG, Bereich
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UED10673
UED10674
P-TSSOP-28-1
22toioi
H-0-10
IAICl28x
GPS05867
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LM 4741
Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
Text: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D
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AN6561
AN1358
AN6562)
AN1358S
2904S
75358S
6223L
10368N
I0358
BA728
LM 4741
TL0820P
75902P
6458D
75458P
4558s
2902N
2904D
75902f
2058d
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knowles speaker
Abstract: No abstract text available
Text: CB-23817-000 SHT I. I 25.40 [ I .00] MAXIMUM Revision DIMENSIONS IN M I L L I M E T E R S [INCHES] C.O. # Implementation Date RELEASE LEVEL MI 0 I0 I232 9-19-06 Released SCALE: KNOWLES ELECTRONICS ITASCA, ILLINOIS U.S.A. i . i DO NOT DR. BY SCALE SPE AKER
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CB-2381r-000
CB-23817-000
knowles speaker
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SD-49225-201
Abstract: microsd drawing 49225-0821 49225-0821 molex PK-49225-201 microsd specification 492250821 microsd connector push-push PK-49
Text: TOLERANCE : ± 0 .0 5 [Card Center-Line] J T B * Normal DIM. : Limited * DIM. : Recommend NOTES 1. 2. 3. 4. MATERIALS: SEE TABLE T h is connector h a s been tested for com paiWity with both T ra n sF la s h and microSD cards* how ever, a s this standard is in transition so m e specifications from dfferent card m akers m ay dffer.
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PS-49225-001
PK-49225-201
SD-49225-201
microsd drawing
49225-0821
49225-0821 molex
PK-49225-201
microsd specification
492250821
microsd connector push-push
PK-49
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BZX70C
Abstract: philips zener diode c47- DIODE BZX70
Text: T N AKER PHILIPS/DISCRETE MAINTENANCE TYPE SSE D • ^ 53=131 0022671 0 B B Z X 7 0 S E R IE S 7-H-JST R E G U L A T O R D IO D E S A range o f diffused silicon diodes in plastic envelopes, intended for use as voltage regulator and transi ent suppressor diodes in medium power regulators and transient suppression circuits.
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BZX70-C7V5
BZX70-C75.
BZX70C
philips zener diode c47-
DIODE BZX70
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BFQ43
Abstract: transistor tt 2222 on 4312 BLW31 Metallized Polyester Film Capacitor MER BB313
Text: L ib s a 'm D02T30G flûT N AKER PHILIPS/DISCRETE V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in c!ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power
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D02T30G
BLW31
BFQ43
transistor tt 2222
on 4312
BLW31
Metallized Polyester Film Capacitor MER
BB313
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B23SL
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Intelligent Network Termination Controller 2B1Q INTC-Q PEB 8191 Version 1.1 PEF 8191 Version 1.1 D a ta s h e e t 10.97 DS 1 Edition 10.97 T his e d ition w a s realized using the so ftw a re syste m Fram eM aker . Published by Siemens AG,
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S235b05
010720b
B23SL
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Four Channel Codec Filter with PCM- and ^-Controller Interface SICOFI 4-|xC PEB 2466 Version 1.2 Data Sheet 02.97 DS 2 Edition 02.97 This edition w as realized using the softw are system Fram eM aker . Published by Siemens AG,
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2466-board
ITS09615
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pj 0159
Abstract: No abstract text available
Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency
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BFG505;
BFG505/X;
BFG505/XR
BFG505
BFG505
pj 0159
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Untitled
Abstract: No abstract text available
Text: Edition 10.96 This edition was realized using the software system F ram eM aker’ . Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73, 81541 Miinchen S ie m e n s AG 1996. All Rights Reserved. Attention please! As fa r as patents o r o ther rights o f third par
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Untitled
Abstract: No abstract text available
Text: SRK383S S ta n d a rd Shaft: 51. 5 7 m m Typical A p p lica tio n : =£53 H a ir C lipper H!.W! B rush Type: f ä ifti C a rb o n W a te r Pump •Ä iS End Bell: B P S Plastic C ookie M aker I # * ! I£« f Operating Nomind Ronge Voltage V V RPM A RPM
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SRK383S
SRHX383S-4040P
SRK383S-327CP
SRK333S-
2380P
SRHK383S-19I8Ã
SSHK383S
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Untitled
Abstract: No abstract text available
Text: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power
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BLW31
BFQ43
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica tions in thick and thin-film circuits. QUICK REFERENCE DATA
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bbS3T31
Q025577
BSR17A
bb53S31
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transistor 3s4
Abstract: DD 127 D TRANSISTOR BUK542 BUK542-100A BUK542-100B
Text: N AKER PHILIPS/DISCRETE bTE D • bt.53^31 ODBDTHS 3S4 M A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION PIN CO Q PINNING -SO T186
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BUK542-1OOA/B
-SOT186
BUK542
-100A
-100B
transistor 3s4
DD 127 D TRANSISTOR
BUK542-100A
BUK542-100B
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SMD SOT23 7E
Abstract: MARKING CODE SMD IC PMBTA13 PMBTA14
Text: • □ □25ûflcï U S ■ APX N AKER PHILIPS/DISCRETE PMBTA13 PMBTA14 b7E » N-P-N SM ALL-SIGNAL DARLINGTON TRANSISTORS N-P-N small-signal darlington transistors in a microminiature SMD envelope SOT-23 . Designed prim arily fo r preamplifier input applications requiring high input impedance.
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PMBTA13
PMBTA14
OT-23)
PMBTA63/64.
OT-23.
100juA
PMBTA14
SMD SOT23 7E
MARKING CODE SMD IC
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Untitled
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide 8 2 7 5 0 Revised ^ § 5 C A B LE M AKER Battery Terminals Part Numbers Nominal Wire Size 6 Closed Flag Type UNIV 29253 — — UNIV 29251 NEG 6 0 8 8 17-2 — — 29250 — — Terminals and Splices CABLE M AKER Battery Terminals
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tc58v32ft
Abstract: TC58V32
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FT--
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tc9800
Abstract: CP1128 TC9806 TC9802
Text: 4. D e v e l o p m e n t F lo w a n d D e v e l o p m e n t S u p p o r t T o o ls 4.1 D e v e lo p m e n t F lo w Figure 4-1 shows the normal PLD development flow. When system and logic designs are complete, the design data m ust be input to the PLD development software.
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TC9800/01
TC9802/03
TC9804/0S
TC9806/07
TC9808/09
tc9800
CP1128
TC9806
TC9802
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