M950x0
Abstract: EEPROM F6SP36 6512 AI123
Text: M950x0 M950x0-W M950x0-R 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with SPI bus serial interface Positive clock SPI modes ■ Single supply voltage: – 4.5 V to 5.5 V for M950x0 – 2.5 V to 5.5 V for M950x0-W
|
Original
|
PDF
|
M950x0
M950x0-W
M950x0-R
M950x0
M950x0-W
M950x0-R
40-year
M95040
M95040-W
EEPROM
F6SP36
6512
AI123
|
M27C160
Abstract: Q15A
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
|
Original
|
PDF
|
M27C160
50sec.
FDIP42W
M27C160
Q15A
|
JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical
|
Original
|
PDF
|
M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
|
Untitled
Abstract: No abstract text available
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS
|
Original
|
PDF
|
M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
|
555 NC timer
Abstract: No abstract text available
Text: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS
|
Original
|
PDF
|
M29F100BT
M29F100BB
128Kb
TSOP48
555 NC timer
|
Untitled
Abstract: No abstract text available
Text: M95M01-R 1 Mbit Serial SPI bus EEPROM with high speed clock Preliminary Data Features • Compatible with SPI bus serial interface Positive Clock SPI modes ■ Single supply voltage: 1.8 V to 5.5 V ■ High speed – 5 MHz clock rate – 5 ms Write time
|
Original
|
PDF
|
M95M01-R
40-year
|
Untitled
Abstract: No abstract text available
Text: M95512-DR M95512-R M95512-W 512 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with SPI bus serial interface Positive clock SPI modes : – M95512-W and M95512-R: standard SPI 512 Kbit EEPROM – M95512-DR: standard SPI 512 Kbit
|
Original
|
PDF
|
M95512-DR
M95512-R
M95512-W
M95512-W
M95512-R:
M95512-DR:
|
DS1220
Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
|
Original
|
PDF
|
M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
DS1220
M48Z02
M48Z12
24-Pin Plastic DIP
|
M95128W
Abstract: M95128 M95128-R M95128-W
Text: M95128 M95128-W M95128-R 128 Kbit Serial SPI bus EEPROM with high speed clock Feature summary • Compatible with SPI Bus Serial Interface Positive Clock SPI Modes ■ Single Supply Voltage: – 4.5 to 5.5V for M95128 – 2.5 to 5.5V for M95128-W – 1.8 to 5.5V for M95128-R
|
Original
|
PDF
|
M95128
M95128-W
M95128-R
M95128-W
40-Year
M95128W
M95128
M95128-R
|
ST10
Abstract: ST95010 ST95020 ST95040 ST9501
Text: ST95040 ST95020, ST95010 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE – 4.5V to 5.5V for ST950x0 – 2.5V to 5.5V for ST950x0W SPI BUS COMPATIBLE SERIAL INTERFACE
|
Original
|
PDF
|
ST95040
ST95020,
ST95010
ST950x0
ST950x0W
150mil
ST950x0
ST10
ST95010
ST95020
ST95040
ST9501
|
M27C160
Abstract: PDIP42 PLCC44 Q15A SDIP42
Text: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)
|
Original
|
PDF
|
M27C160
FDIP42W
PDIP42
SDIP42
M27C160
PDIP42
PLCC44
Q15A
SDIP42
|
AN620
Abstract: M27C801 PDIP32 PLCC32 TSOP32 VA10
Text: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACC ESS TIME: 45 ns ■ LOW POWER CONSUMPTION: - Active Current 3 5 m A a t5 M H z - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)
|
OCR Scan
|
PDF
|
M27C801
35mAat5MHz
M27C801
FDIP32W
TSOP32
AN620
PDIP32
PLCC32
VA10
|
X101
Abstract: X110
Text: Gl SGS-THOMSON ST95081 M ê i s i m ‘ïïT i3 © r a g s _ SERIAL ACCESS SPI BUS 8K (1024 x 8 EEPROM PRELIMINARY DATA 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE
|
OCR Scan
|
PDF
|
ST95081
ST95081
8R33mEgTlÂ
7TETE37
DD7523D
DD7SS31
X101
X110
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)
|
OCR Scan
|
PDF
|
M29F105B
TSOP40
|
|
|
Untitled
Abstract: No abstract text available
Text: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ±10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 35m Aat5M Hz - Standby Current 100|uA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|is/byte (typical)
|
OCR Scan
|
PDF
|
M27C801
M27C801
FDIP32W
TSOP32
|
Untitled
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N 5 7 . » « m i » « ® M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or
|
OCR Scan
|
PDF
|
M28F210
M28F220
TSOP56
20/25mATypical
7T2T237
M28F210,
|
Untitled
Abstract: No abstract text available
Text: £jJ SGS-THOMSON 0 iMDIŒ ra(M0©S M28F410 4 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5 % o r± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
|
OCR Scan
|
PDF
|
M28F410
x8/x16,
0020h
00F2h
M28F410
|
Untitled
Abstract: No abstract text available
Text: 5 7 . M28F211 M28F221 SGS-THOMSON RS0 gS3 (ó ÌlLi TO©K!IQ(§i 2 Megabit (x 8, Block Erase) FLASH MEMORY PRELIMINARY DATA • SMALLSIZE PLASTIC PACKAGETSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo cation) with hardware write and erase pro
|
OCR Scan
|
PDF
|
M28F211
M28F221
PACKAGETSOP40
20/25mATypical
TSQP40
2S237
|
Untitled
Abstract: No abstract text available
Text: /T T S G S -T H O M S O N li!ilO IILi g¥K©li!!lD(gi M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3V± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|jA
|
OCR Scan
|
PDF
|
M28LV17
150ns
|
Untitled
Abstract: No abstract text available
Text: M29F080A 8 Mbit 1 Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 16 UNIFORM 64 Kbyte MEMORY BLOCKS
|
OCR Scan
|
PDF
|
M29F080A
TSOP40
|
Untitled
Abstract: No abstract text available
Text: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES
|
OCR Scan
|
PDF
|
M28F201
15mATyp.
10pATyp.
TSOP32
M28F201
|
Untitled
Abstract: No abstract text available
Text: £ y j S G S 'T H O M S O N SERIAL ACCESS SPI BUS 2K 256 x 8 EEPROM l i f e 100,000 ERASE/WRITE CYCLES 10 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE 2 MHz CLOCK RATE MAX BLOCK WRITE PROTECTION STATUS REGISTER
|
OCR Scan
|
PDF
|
ST95021
DD721b3
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
|
OCR Scan
|
PDF
|
M29F200T
M29F200B
x8/x16,
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10|jA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE
|
OCR Scan
|
PDF
|
M28F201
15mATyp.
PLCC32
TSOP32
M28F201
TSOP32
|
