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    AGILENT HBT TRANSISTOR SERIES Search Results

    AGILENT HBT TRANSISTOR SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AGILENT HBT TRANSISTOR SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    agilent HBT transistor series

    Abstract: tca 335 A 1GC1-8000 HBT agilent series
    Text: Agilent HMMC-5200 DC–20 GHz HBT Series Shunt Amplifier 1GC1-8000 Data Sheet Features • High bandwidth, F–1 dB: 21 GHz typical • Moderate gain: 9.5 dB ±1 dB @ 1.5 GHz • P–1 dB @ 1.5 GHz: 12.5 dBm typical • Low l/f noise corner: < 20 kHz typical


    Original     		PDF HMMC-5200 1GC1-8000 5989-6211EN agilent HBT transistor series tca 335 A HBT agilent series

    Untitled

    Abstract: No abstract text available
    Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


    Original     		PDF HMMC-5220 HMMC-5220 5968-1782E

    Untitled

    Abstract: No abstract text available
    Text: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features • High Bandwidth, F−1dB: 21 GHz Typical • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P−1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


    Original     		PDF HMMC-5200 5988-3202EN

    agilent HBT transistor series

    Abstract: No abstract text available
    Text: Agilent HMMC-5220 DC–15 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 16 GHz Typical •Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:


    Original     		PDF HMMC-5220 5988-3201EN agilent HBT transistor series

    HMMC-5200

    Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines
    Text: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 21 GHz Typical •Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:


    Original     		PDF HMMC-5200 HMMC-5200 5988-3202EN GaAs MMIC ESD, Die Attach and Bonding Guidelines

    HMMC-5220

    Abstract: applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC
    Text: Agilent HMMC-5220 DC-15 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 16 GHz Typical • Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


    Original     		PDF HMMC-5220 DC-15 HMMC-5220 HMMC-5220/rev applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC

    agilent HBT transistor series

    Abstract: No abstract text available
    Text: Agilent HMMC-5200 DC-20 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 21 GHz Typical • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


    Original     		PDF HMMC-5200 DC-20 HMMC-5200 HMMC-5200/rev agilent HBT transistor series

    Untitled

    Abstract: No abstract text available
    Text: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical IN OUT


    Original     		PDF HMMC-5200 HMMC-5200 5968-1783E

    Untitled

    Abstract: No abstract text available
    Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Thin silicon nitride Si3N4 films deposited using plasma-enhanced


    Original     		PDF 300oC,

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: diagram ta 306-2
    Text: HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Description Features The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. The device consists of a modified Darlington feedback pair which reduces the


    Original     		PDF HMMC-5200 HMMC-5200 460mm AV01-xxxxEN GaAs MMIC ESD, Die Attach and Bonding Guidelines diagram ta 306-2

    agilent HBT transistor series

    Abstract: Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419
    Text: Application Note WCDMA Cellular 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6271 • AWT6272 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed for WCDMA Cellular handsets have an operating


    Original     		PDF AWT6271 AWT6272 agilent HBT transistor series Amplifier Modules AWT6271 E4419B E9301H Low frequency power transistor and modules fsp Power supply 6624A R04033 E4419

    signal generator

    Abstract: AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series
    Text: Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS • • • • AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed


    Original     		PDF AWT6252 AWT6274 AWT6275 AWT6276 signal generator AWT6252 AWT6274 AWT6275 E4419B E9301H agilent HBT transistor series

    1GC1

    Abstract: Die Attach and Bonding Guidelines TC225 GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series
    Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:


    Original     		PDF 1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev 1GC1 Die Attach and Bonding Guidelines GaAs MMIC ESD, Die Attach and Bonding Guidelines 1gc1 agilent TC2-25 2tc2-25 agilent HBT transistor series

    TC225

    Abstract: No abstract text available
    Text: Agilent 1GC1-8048 40–72 GHz Doubler TC225 Data Sheet Features • PIN = + 15 dBm • Wide Bandwidth: 40–72 GHz Usable to 80+ GHz • Low Conversion Loss: 13 dB typical • Low 1/2 and 3/2 spurs: –23 dBc typical Chip Size: Chip Size Tolerance: Chip Thickness:


    Original     		PDF 1GC1-8048 TC225 TC225 1GC1-8048 TC225/rev

    AWT6282

    Abstract: E4419B E9301H agilent HBT transistor series
    Text: Application Note UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 1 Relevant products • AWT6278 • AWT6279 • AWT6282 General Description The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor HBT power amplifier modules designed UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output


    Original     		PDF 1700/IMT/PCS AWT6278 AWT6279 AWT6282 AWT6282 E4419B E9301H agilent HBT transistor series

    monolithic amplifier MAR

    Abstract: ADS2001 ERA-5-ED9351 current amplifier note darlington HP54835A monolithic amplifiers
    Text: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model


    Original     		PDF AN-60-034) AN-60-034 M100394 AN60034 monolithic amplifier MAR ADS2001 ERA-5-ED9351 current amplifier note darlington HP54835A monolithic amplifiers

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE Transient Protection of Darlington gain block amplifiers AN-60-034 1. Introduction Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model


    Original     		PDF AN-60-034) AN-60-034 M150261 AN60034

    DECT telephone schematic

    Abstract: Germanium Power Diodes MAAPSS0066 MAAPSS0071 MAAPSS0075 MAAPSS0076 Germanium power
    Text: RF TO LIGHT FEBRUARY 2004 by TestMart NAVICPmart “K” Package VCO Module for Consumer Applications by Sirenza Microdevices High Performance SiGe Amplifiers for Cordless and Wireless Applications by M/A-COM Millimeter Wave Attenuation Measurements with an FFT Analyzer


    Original     		PDF MAMUSS0009 DECT telephone schematic Germanium Power Diodes MAAPSS0066 MAAPSS0071 MAAPSS0075 MAAPSS0076 Germanium power

    free transistor

    Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
    Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package


    Original     		PDF BFR740L3RH free transistor uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100

    uln 2008

    Abstract: 825000 BFP740F Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types
    Text: Application Note, Rev. 1.2, November 2008 Application Note No. 168 BFP740F SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 16 dB Gain, 1.3 dB Noise Figure & 1 microsecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F uln 2008 825000 Digital Oscilloscope Preamplifier michael hiebel fundamentals of vector analysis uln 2008 datasheet LQP10A MTA-100 spice ULN ultra Low Noise ULN types

    uln 2008

    Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A
    Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


    Original     		PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


    Original     		PDF BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier

    k 513

    Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
    Text: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN179 BFP620 BFP640F AN182 k 513 MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179