40LT16
Abstract: No abstract text available
Text: BC817-16LT1 BC817-25LT1 BC817-40LT1 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE
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BC817-16LT1
BC817-25LT1
BC817-40LT1
OT-23
OT-23
MIL-STD-202E
40LT16
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IC104
Abstract: No abstract text available
Text: BCP 72 PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package BCP 72 PAs SOT-23-5
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OT-23-5
Q62702-
Dec-04-1996
IC104
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BC817
Abstract: BC807 BC817-16 BC817-25 BC817-40 6a. sot 23 pnp marking 6A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC817-16 BC817-25 BC817-40 TRANSISTOR NPN SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage
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OT-23
BC817-16
BC817-25
BC817-40
OT-23
BC807
100mA
500mA
500mA,
BC817
BC807
BC817-16
BC817-25
6a. sot 23 pnp
marking 6A
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100MHZ
Abstract: BC817-16 BC817-25 BC817-40
Text: BC817-16 BC817-25 BC817-40 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * BASE Case: Molded plastic
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BC817-16
BC817-25
BC817-40
OT-23
OT-23
MIL-STD-202E
100MHZ
BC817-16
BC817-25
BC817-40
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bc857
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B BC857A, B,C BC858A, B,C TRANSISTOR PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER
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OT-23
BC856A,
BC857A,
BC858A,
OT-23
BC856
BC857
BC858
bc857
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BC857
Abstract: BC858 BC856 BC856B BC857 Plastic BC857C BC856A BC857A BC857B BC858A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR BC857A, B,C BC858A, B,C PNP SOT-23 FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 1. BASE 2. EMITTER
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OT-23
BC856A
BC857A,
BC858A,
OT-23
BC856
BC857
BC858
BC857
BC858
BC856
BC856B
BC857 Plastic
BC857C
BC857A
BC857B
BC858A
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DKs smd marking
Abstract: marking AF BCX42 high voltage swiching transistors marking AF SOT
Text: Transistors SMD Type PNP Silicon AF an Swiching Transistors BCX42 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High breakdown voltage 1 Low collector-emitter saturation voltage 0.55 For general AF applications +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1
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BCX42
OT-23
DKs smd marking
marking AF
BCX42
high voltage swiching transistors
marking AF SOT
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage
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OT-23
BC818-16
BC818-25
OT-23
BC818-40
100mA
300mA
500mA,
500mA
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bc818
Abstract: BC818-16 BC818-25 BC818-40
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC818-16 BC818-25 SOT-23 BC818-40 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage
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PDF
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OT-23
BC818-16
BC818-25
OT-23
BC818-40
100mA
300mA
500mA,
500mA
bc818
BC818-16
BC818-25
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bc817
Abstract: SOT-23 6C BC817-25
Text: BC817-16 BC817-25 BC817-40 SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)
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BC817-16
BC817-25
BC817-40
OT-23
OT-23
BC807
100mA
500mA
500mA,
bc817
SOT-23 6C
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bc847
Abstract: BC848 BC846 BC846A BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A,B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications
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OT-23
BC846A
BC847A,
BC848A,
OT-23
BC846
BC847
BC848
bc847
BC848
BC846
BC847B-1F
BC847 Plastic
BC847C
BC848C
BC846B
BC847A
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6E SMD
Abstract: marking AF SOT-23 6F BC818A
Text: Transistors SMD Type NPN Silicon AF Transistors KC818A BC818A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High collector current. 1 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High current gain. +0.05
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KC818A
BC818A)
OT-23
KC818A-16
KC818A-25
KC818A-40
6E SMD
marking AF
SOT-23 6F
BC818A
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BC859
Abstract: No abstract text available
Text: BC859 SOT-23 Silicon Planar Epitaxial Transistors TRANSISTORS PNP FEATURES * Ideally suited for automatic insertion * For switching and AF amplifier applications SOT-23 COLLECTOR MECHANICAL DATA * * * * 3 BASE Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed
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BC859
OT-23
OT-23
MIL-STD-202E
BC859
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BC847B1F
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A, B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications
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PDF
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OT-23
BC846A,
BC847A,
BC848A,
OT-23
BC846
BC847
BC848
BC847B1F
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smd marking 5G
Abstract: MARKING 5E marking AF
Text: Transistors SMD Type PNP Silicon AF Transistors KC808A BC808A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05
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KC808A
BC808A)
OT-23
KC808A-16
KC808A-25
KC808A-40
smd marking 5G
MARKING 5E
marking AF
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Untitled
Abstract: No abstract text available
Text: BC808 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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BC808
OT-23
OT-23
BC818
-300mA
-500mA,
-50mA
-10mA,
50MHz
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smd 9FB
Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
Text: Transistors SMD Type PNP Silicon AF Transistors KC807 BC807 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC807
BC807)
OT-23
300mA
KC807-16
KC807-25
KC807-40
smd 9FB
marking 9fb
SMD MARKING 9fB
marking AF
BC807
KC807-25
KC807-40
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DHs SOT-23
Abstract: DFs SOT-23 sep 67a BCW67 das sot 23 67A SOT 23 6
Text: BCW 67, BCW 68 PNP Silicon AF Transistors 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 65, BCW 66 NPN 2 1 Type Marking Pin Configuration BCW 67A DAs 1=B 2=E 3=C SOT-23 BCW 67B
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OT-23
VPS05161
Sep-30-1999
EHP00401
EHP00402
DHs SOT-23
DFs SOT-23
sep 67a
BCW67
das sot 23
67A SOT 23 6
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bc857
Abstract: BC857A 3F TRANSISTOR transistor pnp bc858 transistor 3j SOT-23 marking 3f transistor 3f sot-23 BC856B marking pc sot-23 transistor
Text: BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO
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BC856A
BC857A
BC858A
OT-23
OT-23
BC856
BC857
BC858
3F TRANSISTOR
transistor pnp
bc858
transistor 3j
SOT-23 marking 3f
transistor 3f sot-23
BC856B
marking pc sot-23 transistor
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Bc817 sot-23
Abstract: 8fc smd 8FC SOT23 KC817-25 BC817 smd KC817-40 marking 8FC marking 8fb marking AF BC817
Text: Transistors SMD Type NPN Silicon AF Transistors KC817 BC817 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC817
BC817)
OT-23
Jun10
300mA
KC817-16
KC817-25
KC817-40
Bc817 sot-23
8fc smd
8FC SOT23
KC817-25
BC817 smd
KC817-40
marking 8FC
marking 8fb
marking AF
BC817
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KC807A-25
Abstract: 5C smd BC807A marking AF smd 5c KC807A-40 marking 5A
Text: Transistors SMD Type PNP Silicon AF Transistors KC807A BC807A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC807A
BC807A)
OT-23
KC807A-16
KC807A-25
KC807A-40
KC807A-25
5C smd
BC807A
marking AF
smd 5c
KC807A-40
marking 5A
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marking AF
Abstract: BC818
Text: Transistors SMD Type NPN Silicon AF Transistors KC818 BC818 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1
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KC818
BC818)
OT-23
300mA
KC818-16
KC818-25
KC818-40
marking AF
BC818
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EHs SOT-23
Abstract: EFs SOT-23
Text: BCW 65, BCW 66 NPN Silicon AF Transistor 3 • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW 67, BCW 68 PNP 2 1 Type Marking Pin Configuration BCW 65A EAs 1=B 2=E 3=C SOT-23 BCW 65B
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OT-23
VPS05161
Sep-30-1999
EHP00394
EHP00395
EHs SOT-23
EFs SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC808 SOT-23 TRANSISTOR PNP 1. BASE FEATURES z Suitable for AF-Driver stages and low power output stages z Complement to BC818 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
BC808
OT-23
BC818
-100mA
-300mA
-500mA,
-50mA
-10mA,
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