VFBGA44
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
32-Mbit
VFBGA44
M58WR016KL
M58WR032KL
ADQ12
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFXXX16Q2A
80x11
KFG1G16Q2A)
KFN2G16Q2A)
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216-ball
Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die
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MT42L128M16D1,
MT42L64M32D1,
MT42L64M64D2,
MT42L128M32D2,
MT42L256M32D4,
MT42L128M64D4
MT42L96M64D3,
MT42L192M32D3
09005aef83f3f2eb
216-ball
Dual LPDDR2
LPDDR2 SDRAM micron
LPDDR2 1Gb Memory
MR63
Micron LPDDR2
lpddr2 168
lp-ddr2
MT42L256M32
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
80x11
KFM2G16Q2M)
KFN4G16Q2M)
4GB MLC NAND
SAMSUNG NAND Flash MLC
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M59MR032C
Abstract: M59MR032D w849 ADQ14
Text: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ
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M59MR032C
M59MR032D
100ns
LFBGA54
BGA46
M59MR032C
M59MR032D
w849
ADQ14
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S72NS512RE0
Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS512RE0
DDQ15
S72NS512RD0
spansion marking date code
S29NS-R
S72NS128
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IS66WVD2M16DALL
Abstract: CellularRAM 66WVD2M16DALL
Text: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD2M16DALL
IS66WVD2M16DALL
32Mbit
-40oC
2Mx16
IS66WVD2M16DALL-7013BLI
IS66WVD2M16DALL-7010BLI
IS66WVD2M16DALL-7008BLI
54-ball
CellularRAM
66WVD2M16DALL
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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Untitled
Abstract: No abstract text available
Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■
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M58MR032C
M58MR032D
40MHz
100ns
TFBGA48
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st MCP
Abstract: No abstract text available
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
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M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
st MCP
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Untitled
Abstract: No abstract text available
Text: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71NS-J
S71NS-J
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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M39P0R1080E4
Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)
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M39P0R9080E4
M39P0R1080E4
TFBGA165
64-bit
M39P0R1080E4
M39P0R9080E4
M58PR001LE
M58PR512LE
M39P0R09080E4
BCAS SD
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CR10
Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)
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M58WR064HU
M58WR064HL
66MHz
CR10
CR14
M58WR064HL
M58WR064HU
VFBGA44
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spansion marking date code
Abstract: No abstract text available
Text: S71XS-S based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71XS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71XS-S
spansion marking date code
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S72NS128RD0AHBL
Abstract: 2118 FAMILY DRAM block diagram 2118 FAMILY DRAM S29NS-R S72NS512RD0 S72NS512RE0 S72NS128RD0AHBL0
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS128RD0AHBL
2118 FAMILY DRAM block diagram
2118 FAMILY DRAM
S29NS-R
S72NS512RD0
S72NS512RE0
S72NS128RD0AHBL0
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KFM5616Q1A-DEB6
Abstract: No abstract text available
Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY
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MuxOneNAND256
KFM5616Q1A-DEB6)
256Mb
KFM5616Q1A-DEB6
67FBGA
67-FBGA-7
KFM5616Q1A-DEB6
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63FBGA
Abstract: KFN4G16Q2A
Text: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2A-DEBx)
KFN4G16Q2A-DEBx)
KFM2G16Q2A
KFN4G16Q2A
80x11
KFM2G16Q2A)
KFN4G16Q2A)
63FBGA
KFN4G16Q2A
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
SG200602485
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die
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MT42L256M16D1,
MT42L128M32D1,
MT42L256M32D2,
MT42L128M64D2,
MT42L512M32D4,
MT42L192M64D3,
MT42L256M64D4
134-ball
168-ball
09005aef84427aab)
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Untitled
Abstract: No abstract text available
Text: IS66WVD204816ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD204816ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a
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IS66WVD204816ALL
IS66WVD204816ALL
32Mbit
-40oC
2Mx16
IS66WVD204816ALL-7013BLI
IS66WVD204816ALL-7010BLI
IS66WVD204816ALL-7008BLI
54-ball
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TCA 785 application note
Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFM1G16Q2A-DEBx
63FBGA
KFN2G16Q2A-DEBx
80x11
KFG1G16Q2A)
TCA 785 application note
KFM1G16Q2A
TCA 700 v
tca 785
128Mb DDR SDRAM samsung version 0.3
Samsung 2Gb 3V MLC Nand flash
Samsung MLC
Samsung oneNand Mux
1004C
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