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    AD 162 TRANSISTOR Search Results

    AD 162 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AD 162 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T3Cs

    Abstract: VP1167 vp251 VP1160 BC101 DATASHEET CR95 VP1165 bc136 VP221 transistor bc102
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF d-900 Unit2607 T3Cs VP1167 vp251 VP1160 BC101 DATASHEET CR95 VP1165 bc136 VP221 transistor bc102

    25816

    Abstract: bc142 transistor transistor bc102 VP1135 BC153 osd font bc136 BC140 osd character c816
    Text: M37280MFH–XXXSP, M37280MKH–XXXSP, M37280EKSP SNGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37280MFH–XXXSP and M37280MKH-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They


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    PDF M37280MFH M37280MKH M37280EKSP M37280MKH-XXXSP M37280EKSP M37280MKHXXXSP M37280MFH-XXXSP M37280MKHXXXSP. 25816 bc142 transistor transistor bc102 VP1135 BC153 osd font bc136 BC140 osd character c816

    VP271

    Abstract: BC163 VP1167 VP250 bc136 vp230 General Electric CR104 BC150 BC101 DATASHEET vp251
    Text: MITSUBISHI MICROCOMPUTERS M37280MFH–XXXSP, M37280MKH–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37280MFH–XXXSP and M37280MKH-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They


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    PDF M37280MFH M37280MKH M37280EKSP M37280MKH-XXXSP M37280EKSP M37280MKHXXXSP M37280MFH-XXXSP VP271 BC163 VP1167 VP250 bc136 vp230 General Electric CR104 BC150 BC101 DATASHEET vp251

    bc136

    Abstract: Hitachi OC26 MITSUBISHI ELECTRIC VP143 CR123 cr64 cr65 vp110 M37280EKSP M37280MFH-XXXSP M37280MKH-XXXSP cr141
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M37280MFH M37280MKH M37280EKSP bc136 Hitachi OC26 MITSUBISHI ELECTRIC VP143 CR123 cr64 cr65 vp110 M37280EKSP M37280MFH-XXXSP M37280MKH-XXXSP cr141

    BC106

    Abstract: BC164 BC133 VP1165 BC102 VP1107 bc104 BC105 VP1117 21c16
    Text: M37281MAH–XXXSP,M37281MFH–XXXSP,M37281MKH–XXXSP, REJ03B0049-0101Z M37281EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Rev.1.01 with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37281MAH–XXXSP, M37281MFH–XXXSP and M37281MKHXXXSP are single-chip microcomputers designed with CMOS silicon


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    PDF M37281MAH M37281MFH M37281MKH REJ03B0049-0101Z M37281EKSP M37281MKHXXXSP M37281EKSP M37281MKH-XXXSP BC106 BC164 BC133 VP1165 BC102 VP1107 bc104 BC105 VP1117 21c16

    VP2120

    Abstract: VP1160 vp250 23216-2 CRT akai 1416 g1 rc16 M37281EKSP M37281MAH-XXXSP bc153 M37281MKH-XXXSP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M37281MAH M37281MFH M37281MKH M37281EKSP PCA7401 PCA7400. VP2120 VP1160 vp250 23216-2 CRT akai 1416 g1 rc16 M37281MAH-XXXSP bc153 M37281MKH-XXXSP

    BC136

    Abstract: transistor bc102 transistor cr64 1933E BC55 VP143 RC6 philips decoder osd font osd character 1AB3
    Text: Y NAR MI I L E . . tion change ifica pec bject to s l su fina ot a its are is n his ntic lim T : me ice Not e para Som PR MITSUBISHI MICROCOMPUTERS M37280MF–XXXSP, M37280MK–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER


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    PDF M37280MF M37280MK M37280EKSP M37280MK-XXXSP M37280EKSP BC136 transistor bc102 transistor cr64 1933E BC55 VP143 RC6 philips decoder osd font osd character 1AB3

    1933E

    Abstract: CR16 mitsubishi 1803e 1AB3 BC131 bc136 bc143 caption cr64 M37280EKSP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M37280MF M37280MK M37280EKSP 1933E CR16 mitsubishi 1803e 1AB3 BC131 bc136 bc143 caption cr64 M37280EKSP

    1933E

    Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M37280MF M37280MK M37280EKSP 1933E caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251

    capacitor 0,1 mF 50V

    Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
    Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization


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    PDF P4525-ND P5182-ND 1-877-GOLDMOS 1301-PTF capacitor 0,1 mF 50V 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram

    G200

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization


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    PDF P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF G200

    Untitled

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and


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    PDF P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF

    rc21 series

    Abstract: television block diagram 24c16 datasheet BC100 BC106 datasheet cr25 philips CR25 resistor osd font 23216-2 BC140
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M37281MAH M37281MFH M37281MKH M37281EKSP rc21 series television block diagram 24c16 datasheet BC100 BC106 datasheet cr25 philips CR25 resistor osd font 23216-2 BC140

    21C16

    Abstract: cr64 cr65 24c16 programmer osd font VP2140 23216-2 24C16 application 25816 Philips CR93 M37281EKSP
    Text: MITSUBISHI MICROCOMPUTERS M37281MAH–XXXSP,M37281MFH–XXXSP M37281MKH–XXXSP,M37281EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37281MAH–XXXSP, M37281MFH–XXXSP and M37281MKHXXXSP are single-chip microcomputers designed with CMOS silicon


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    PDF M37281MAH M37281MFH M37281MKH M37281EKSP M37281MKHXXXSP M37281EKSP M37281MKH-XXXSP M37281MAH­ 21C16 cr64 cr65 24c16 programmer osd font VP2140 23216-2 24C16 application 25816 Philips CR93

    AD161

    Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
    Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit


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    PDF max-19 AD161 ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7

    HXTR-3685

    Abstract: HXTR-3686 HXTR3685 HXTR 3685
    Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package


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    PDF HXTR-3685 HXTR-3686 HXTR-3685 HPAC-85 HPAC-86 HXTR-3686 HXTR3685 HXTR 3685

    transistor buz 36

    Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
    Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values


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    PDF O-220 C67078-S1330-A3 SIL02831 SIL02834 transistor buz 36 transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 transistor buz 90 BUZ 140 L

    IR LFN

    Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF Tc-25 2SB816 IR LFN 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10

    GE5060

    Abstract: GE-5060 GE5061 GE5062
    Text: HIGH SPEED GE5060,1,2 NPN POWER DARLINGTON 400-500 VOLTS 20 AMP, 125 WATTS TRANSISTORS These devices are designed for use in high speed switching applications, such as off-line switching pow er supplies, A C & D C m otor control, U PS systems, ultrasonic equipm ent and


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    PDF GE5060 ge5061 ge5062 V25-C GE5060/60* GE506I/ GE5062/ GE-5060

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


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    PDF L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857

    FR4 epoxy dielectric constant 4.4

    Abstract: e/AT-33225-BLK
    Text: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency


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    PDF AT-33225 OT-223 AT-33225 AT-3322 5965-5910E 44475A4 FR4 epoxy dielectric constant 4.4 e/AT-33225-BLK

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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    PDF

    MMBR951L

    Abstract: BR951L MRF951 mrf9511l
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features


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    PDF MRF951 BR951L RF9511L MRF951 MMBR951L mrf9511l

    Untitled

    Abstract: No abstract text available
    Text: SD57045 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENTTHERM AL STABILITY COMMON SOURCE CONFIGURATION • Pout = 45 W PEP with 13 dB gain @ 945 MHz . B eO FR EE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel


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    PDF SD57045 SD57045 TSD57045