T3Cs
Abstract: VP1167 vp251 VP1160 BC101 DATASHEET CR95 VP1165 bc136 VP221 transistor bc102
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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d-900
Unit2607
T3Cs
VP1167
vp251
VP1160
BC101 DATASHEET
CR95
VP1165
bc136
VP221
transistor bc102
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25816
Abstract: bc142 transistor transistor bc102 VP1135 BC153 osd font bc136 BC140 osd character c816
Text: M37280MFH–XXXSP, M37280MKH–XXXSP, M37280EKSP SNGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37280MFH–XXXSP and M37280MKH-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They
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M37280MFH
M37280MKH
M37280EKSP
M37280MKH-XXXSP
M37280EKSP
M37280MKHXXXSP
M37280MFH-XXXSP
M37280MKHXXXSP.
25816
bc142 transistor
transistor bc102
VP1135
BC153
osd font
bc136
BC140
osd character
c816
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VP271
Abstract: BC163 VP1167 VP250 bc136 vp230 General Electric CR104 BC150 BC101 DATASHEET vp251
Text: MITSUBISHI MICROCOMPUTERS M37280MFH–XXXSP, M37280MKH–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37280MFH–XXXSP and M37280MKH-XXXSP are single-chip microcomputers designed with CMOS silicon gate technology. They
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M37280MFH
M37280MKH
M37280EKSP
M37280MKH-XXXSP
M37280EKSP
M37280MKHXXXSP
M37280MFH-XXXSP
VP271
BC163
VP1167
VP250
bc136
vp230
General Electric CR104
BC150
BC101 DATASHEET
vp251
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bc136
Abstract: Hitachi OC26 MITSUBISHI ELECTRIC VP143 CR123 cr64 cr65 vp110 M37280EKSP M37280MFH-XXXSP M37280MKH-XXXSP cr141
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37280MFH
M37280MKH
M37280EKSP
bc136
Hitachi OC26
MITSUBISHI ELECTRIC VP143
CR123
cr64 cr65
vp110
M37280EKSP
M37280MFH-XXXSP
M37280MKH-XXXSP
cr141
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BC106
Abstract: BC164 BC133 VP1165 BC102 VP1107 bc104 BC105 VP1117 21c16
Text: M37281MAH–XXXSP,M37281MFH–XXXSP,M37281MKH–XXXSP, REJ03B0049-0101Z M37281EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Rev.1.01 with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37281MAH–XXXSP, M37281MFH–XXXSP and M37281MKHXXXSP are single-chip microcomputers designed with CMOS silicon
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M37281MAH
M37281MFH
M37281MKH
REJ03B0049-0101Z
M37281EKSP
M37281MKHXXXSP
M37281EKSP
M37281MKH-XXXSP
BC106
BC164
BC133
VP1165
BC102
VP1107
bc104
BC105
VP1117
21c16
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VP2120
Abstract: VP1160 vp250 23216-2 CRT akai 1416 g1 rc16 M37281EKSP M37281MAH-XXXSP bc153 M37281MKH-XXXSP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M37281MAH
M37281MFH
M37281MKH
M37281EKSP
PCA7401
PCA7400.
VP2120
VP1160
vp250
23216-2
CRT akai 1416
g1 rc16
M37281MAH-XXXSP
bc153
M37281MKH-XXXSP
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BC136
Abstract: transistor bc102 transistor cr64 1933E BC55 VP143 RC6 philips decoder osd font osd character 1AB3
Text: Y NAR MI I L E . . tion change ifica pec bject to s l su fina ot a its are is n his ntic lim T : me ice Not e para Som PR MITSUBISHI MICROCOMPUTERS M37280MF–XXXSP, M37280MK–XXXSP M37280EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER
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M37280MF
M37280MK
M37280EKSP
M37280MK-XXXSP
M37280EKSP
BC136
transistor bc102
transistor cr64
1933E
BC55
VP143
RC6 philips decoder
osd font
osd character
1AB3
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1933E
Abstract: CR16 mitsubishi 1803e 1AB3 BC131 bc136 bc143 caption cr64 M37280EKSP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M37280MF
M37280MK
M37280EKSP
1933E
CR16 mitsubishi
1803e
1AB3
BC131
bc136
bc143
caption
cr64
M37280EKSP
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1933E
Abstract: caption 1AB3 25816 bc136 BC154 CR16 mitsubishi cr64 cr65 VP1160 vp251
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37280MF
M37280MK
M37280EKSP
1933E
caption
1AB3
25816
bc136
BC154
CR16 mitsubishi
cr64 cr65
VP1160
vp251
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capacitor 0,1 mF 50V
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
capacitor 0,1 mF 50V
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2000 watts power amplifier circuit diagram
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G200
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
G200
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Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
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P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
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rc21 series
Abstract: television block diagram 24c16 datasheet BC100 BC106 datasheet cr25 philips CR25 resistor osd font 23216-2 BC140
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M37281MAH
M37281MFH
M37281MKH
M37281EKSP
rc21 series
television block diagram
24c16 datasheet
BC100
BC106 datasheet
cr25 philips
CR25 resistor
osd font
23216-2
BC140
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21C16
Abstract: cr64 cr65 24c16 programmer osd font VP2140 23216-2 24C16 application 25816 Philips CR93 M37281EKSP
Text: MITSUBISHI MICROCOMPUTERS M37281MAH–XXXSP,M37281MFH–XXXSP M37281MKH–XXXSP,M37281EKSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M37281MAH–XXXSP, M37281MFH–XXXSP and M37281MKHXXXSP are single-chip microcomputers designed with CMOS silicon
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M37281MAH
M37281MFH
M37281MKH
M37281EKSP
M37281MKHXXXSP
M37281EKSP
M37281MKH-XXXSP
M37281MAH
21C16
cr64 cr65
24c16 programmer
osd font
VP2140
23216-2
24C16 application
25816
Philips CR93
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AD161
Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit
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max-19
AD161
ad 161
AD162
Valvo Aa
valvo transistoren
valvo
ad 162
AD-161
lastwiderstand-zulassig
ScansUX7
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HXTR-3685
Abstract: HXTR-3686 HXTR3685 HXTR 3685
Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package
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HXTR-3685
HXTR-3686
HXTR-3685
HPAC-85
HPAC-86
HXTR-3686
HXTR3685
HXTR 3685
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transistor buz 36
Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values
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O-220
C67078-S1330-A3
SIL02831
SIL02834
transistor buz 36
transistor buz 19
BUZ11
transistor buz 10
al p80 transistor
transistor buz 11
transistor buz 90
BUZ 140 L
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IR LFN
Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Tc-25
2SB816
IR LFN
2SD1017
LFN ir
180W
2SB768
2SB810
2SB811
2SB812
T5L10
T8L10
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GE5060
Abstract: GE-5060 GE5061 GE5062
Text: HIGH SPEED GE5060,1,2 NPN POWER DARLINGTON 400-500 VOLTS 20 AMP, 125 WATTS TRANSISTORS These devices are designed for use in high speed switching applications, such as off-line switching pow er supplies, A C & D C m otor control, U PS systems, ultrasonic equipm ent and
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GE5060
ge5061
ge5062
V25-C
GE5060/60*
GE506I/
GE5062/
GE-5060
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2SC2340
Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
operate-69
2SC2340
MR 6500
BM74
2SC2339
NE56800
NE56803
NE56853
NE56854
NE56857
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FR4 epoxy dielectric constant 4.4
Abstract: e/AT-33225-BLK
Text: Whnl H E W L E T T mL'EM P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package O u tlin e 25 • 70% C ollector Efficiency
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AT-33225
OT-223
AT-33225
AT-3322
5965-5910E
44475A4
FR4 epoxy dielectric constant 4.4
e/AT-33225-BLK
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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MMBR951L
Abstract: BR951L MRF951 mrf9511l
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features
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MRF951
BR951L
RF9511L
MRF951
MMBR951L
mrf9511l
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Untitled
Abstract: No abstract text available
Text: SD57045 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENTTHERM AL STABILITY COMMON SOURCE CONFIGURATION • Pout = 45 W PEP with 13 dB gain @ 945 MHz . B eO FR EE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel
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SD57045
SD57045
TSD57045
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